A vibrator device includes an intermediate substrate that includes a frame having a first surface and a second surface opposite to the first surface and a vibration element and is formed of quartz crystal, a first substrate that is bonded to the first surface of the frame and is formed of the quartz crystal or glass, a second substrate that is bonded to the second surface of the frame and is formed of the quartz crystal or the glass, and a functional element that is disposed on the first substrate and includes a functional layer, in which the functional element includes a portion overlapping the vibration element in plan view.

A negative-temperature-coefficient thermistor component includes a core. Surfaces of the core are partially covered with a first insulating layer. Surfaces of the core are partially covered with a second insulating layer. The first insulating layer and the second insulating layer overlap each other on a first side surface and a second side surface, each of which is one of the surfaces of the core.

A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

A sensor device includes a detection resistor having a resistance value changing according to a physical quantity and a reference resistor compared with the detection resistor, the reference resistor is configured by electrically connecting a first resistance circuit and a second resistance circuit. The first resistance circuit includes a first and a second resistive element having positive and negative resistance temperature coefficients, respectively, which are electrically connected. The second resistance circuit includes a third and a fourth resistive elements having a positive and a negative resistance temperature coefficient, respectively, which are electrically connected. The first resistance circuit is configured to generate a first deviation to either the positive or negative side with respect to a temperature change, and the second resistance circuit is configured to generate a second deviation to the side opposite to the positive or negative side where the first deviation is generated.

A sensor element of a resistance thermometer includes a substrate having a first layer including lanthanum aluminate and an electrically conducting measuring structure directly arranged on the first layer. The measuring structure includes platinum.

Under predetermined film depositing conditions, the raw material solution of the thermistor film is atomized or dropletized, the carrier gas is supplied to the obtained mist or droplet, the mist or droplet is conveyed to the substrate, and then the mist or droplet is thermally reacted on the substrate to deposit a film. A resultant thermistor thin film has a film thickness of 1 μm or less, a film width of 5 mm or more, a thickness of 50 nm or more and 5 μm or less, a thickness in the range of less than ±50 nm, a thickness of 5 mm or less, and/or a thickness of 50 nm or more and 5 μm or less, and has a film surface roughness (Ra) of 0.1 μm or less.

Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

A negative-temperature-coefficient thermistor component includes a core. Surfaces of the core are partially covered with a first insulating layer. Surfaces of the core are partially covered with a second insulating layer. The first insulating layer and the second insulating layer overlap each other on a first side surface and a second side surface, each of which is one of the surfaces of the core.

A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

A thermistor element includes an element body made of ceramic and including first and second end surfaces opposite to each other and a peripheral surface located between the first end surface and the second end surface, first and second external electrodes respectively covering the first and second end surfaces and portion of the peripheral surface adjacent to the respective first and second end surfaces. The first and second external electrodes include electrode layers including an underlayer and a metal plating layer, the underlayer of the first external electrode includes, adjacent to or in a vicinity of the second external electrode, two second external electrode side corner portions that are thin and adjacent to each other, and the underlayer of the second external electrode includes, adjacent to or in a vicinity of the first external electrode, two first external electrode side corner portions that are thin and adjacent to each other.