A method for efficiently manufacturing chip resistors is provided. A method for efficiently manufacturing chip resistors includes the steps of preparing at least three conductive elongated boards made of an electrically conductive material and a resistive member made of a resistive material, arranging the at least three conductive elongated boards apart from each other along a width direction crossing a longitudinal direction in which one of the at least three conductive elongated boards is elongated, forming a resistor aggregate by bonding the resistive member to the at least three conductive elongated boards, and collectively dividing the resistor aggregate into a plurality of chip resistors by punching so that each of the chip resistors includes two electrodes and a resistor portion bonded to the two electrodes.

In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO.sub.2 grains in contact with each other are uniformly distributed and SiO.sub.2 interposes in gaps between the RuO.sub.2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

The chip resistor according to the present disclosure includes insulating substrate, a pair of upper face electrodes provided on both ends of one face of insulating substrate, and resistor provided on the one face of insulating substrate and connected between the pair of upper face electrodes. The chip resistor includes a pair of end-face electrodes provided on both end faces of insulating substrate to be electrically connected to the pair of upper face electrodes, and plating layer formed on portions of the pair of upper face electrodes and faces of the pair of end-face electrodes. Insulating film formed of a resin is provided on another face opposite to the one face of insulating substrate. Insulating film has a thickness of more than or equal to 30 m.

A sensor element and a method for producing a sensor element are disclosed. In an embodiment a sensor element includes a ceramic carrier having a top side and an underside, a respective NTC layer arranged on the top side and on the underside of the carrier and at least one electrode, wherein a resistance of the respective NTC layer depends on a thickness and/or geometry of the respective NTC layer.

An electronic component manufacturing method includes a blotting process of bringing a conductive paste applied to an end portion of each electronic component body held by a jig into contact with a surface of a surface plate. The blotting process includes simultaneous performance of a distance changing process of changing the distance between an end face of each electronic component body and the surface of the surface plate and a position changing process of changing a two-dimensional position where the end face of the electronic component body is projected on the surface of the surface plate in such a manner that the direction of the movement of two-dimensional position in parallel to the surface of the surface plate successively varies (e.g., along a circular path).

A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

A circuit protection device including a primary fuse, and a positive temperature coefficient (PTC) device and a secondary fuse electrically connected in series with one another and in parallel with the primary fuse, the secondary fuse formed of a quantity of solder disposed on a dielectric surface, wherein the dielectric surface exhibits a de-wetting characteristic relative to the solder such that, when the solder is melted, the solder draws away from the dielectric surface to create a galvanic opening.

An object is to provide a method for manufacturing a resistor capable of suppressing variations in the thickness of a thermally conductive layer interposed between a resistive body and electrode plates. The method for manufacturing a resistor according to the present invention includes a step of forming an unhardened thermally conductive layer on a surface of a resistive body, a step of bringing the thermally conductive layer into a semi-hardened state, and a step of bending electrode plates respectively disposed at both sides of the resistive body, further hardening the thermally conductive layer, and performing adhesion between the resistive body and the electrode plates via the thermally conductive layer.

A resistive element includes: a semiconductor substrate; a field insulating film deposited on the semiconductor substrate; a plurality of resistive layers separately deposited on the field insulating film; an interlayer insulating film deposited to cover the field insulating film and the resistive layers; a pad-forming electrode deposited on the interlayer insulating film, and electrically connected to one edges of the resistive layers; a relay wire deposited on the interlayer insulating film separately from the pad-forming electrode, and including a first terminal electrically connected to another edges of the resistive layers and a second terminal provided so as to form an ohmic contact to the semiconductor substrate; and a rear surface electrode provided under the semiconductor substrate to form an ohmic contact to the semiconductor substrate, wherein the resistive element uses, as a resistor, an electric channel between the pad-forming electrode and the rear surface electrode.