An electronic component and a manufacturing method thereof are disclosed. The electronic component includes a substrate, a conductor pattern portion disposed on the substrate, a first electrode pattern and a second electrode pattern disposed on the conductor pattern portion, at least one dummy conductor pattern disposed to be spaced apart from the conductor pattern portion and disposed on the substrate, and at least one dummy electrode pattern disposed on the at least one dummy conductor pattern. A width of the first electrode pattern is substantially the same as a width of a portion of the conductor pattern portion in contact with the first electrode pattern, and a width of the second electrode pattern is substantially the same as a width of a portion of the conductor pattern portion in contact with the second electrode pattern.

A method for manufacturing a thin film resistor (TFR) module in an integrated circuit (IC) structure is provided. A TFR trench may be formed in an oxide layer. A resistive TFR layer may be deposited over the structure and extending into the trench. Portions of the TFR layer outside the trench may be removed by CMP to define a TFR element including a laterally-extending TFR bottom region and a plurality of TFR ridges extending upwardly from the laterally-extending TFR bottom region. At least one CMP may be performed to remove all or portions of the oxide layer and at least a partial height of the TFR ridges. A pair of spaced-apart metal interconnects may then be formed over opposing end regions of the TFR element, wherein each metal interconnect contacts a respective upwardly-extending TFR ridge, to thereby define a resistor between the metal interconnects via the TFR element.

A method for manufacturing a thin film resistor (TFR) module in an integrated circuit (IC) structure is provided. A TFR trench may be formed in an oxide layer. A resistive TFR layer may be deposited over the structure and extending into the trench. Portions of the TFR layer outside the trench may be removed by CMP to define a TFR element including a laterally-extending TFR bottom region and a plurality of TFR ridges extending upwardly from the laterally-extending TFR bottom region. At least one CMP may be performed to remove all or portions of the oxide layer and at least a partial height of the TFR ridges. A pair of spaced-apart metal interconnects may then be formed over opposing end regions of the TFR element, wherein each metal interconnect contacts a respective upwardly-extending TFR ridge, to thereby define a resistor between the metal interconnects via the TFR element.

The present invention provides a chip resistor and a method of making the same for alleviating stress resulted from thermal expansion difference and thus suppressing cracks. A chip resistor includes: a substrate, having a carrying surface and a mounting surface facing away from each other; a pair of upper electrodes, disposed at two ends of the carrying surface; a resistor, disposed on the carrying surface and between the pair of upper electrodes, and electrically connected to the pair of upper electrodes; a stress relaxation layer having flexibility and formed on the mounting surface of the substrate; a metal thin film layer, formed on a surface of the stress relaxation layer opposite to the substrate; a side electrode for electrically connecting the upper electrodes and the metal thin film layer; and a plating layer covering the side electrode and the metal thin film layer.

A ceramic electronic component includes a rectangular or substantially rectangular parallelepiped-shaped stack in which a ceramic layer and an internal electrode are alternately stacked and an external electrode provided on a portion of a surface of the stack and electrically connected to the internal electrode. The external electrode includes an inner external electrode covering a portion of the surface of the stack and including a mixture of a resin component and a metal component and an outer external electrode covering the inner external electrode and including a metal component. A volume occupied by the resin component in the inner external electrode is within a prescribed range.

An NTC thin film thermistor that includes at least a first thin film electrode, at least an NTC thin film, and at least a second thin film electrode. A further aspect relates to a method for producing an NTC thin film thermistor.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

The present invention relates to a surge-resistant wire-wound resistor and a manufacturing method thereof, wherein soldering points, at which a cap at each end of the wire-wound resistor is soldered, are electroplated with an electroplated metal layer to significantly improve the reliability of soldering points. The surge-resistant wire-wound resistor comprises a ceramic rod; one or more than one wound metal wire; a first cap and a second cap; a first lead wire and a second lead wire, wherein the first cap and the second cap are respectively electroplated to have a first cap electroplated layer and a second cap electroplated layer.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

An electronic component includes a body part and a via part. The body part includes first and second metal layers disposed with at least one dielectric layer interposed therebetween. The via part is disposed in the body part and includes first and second vias penetrating through the body part and selectively connected to the first and second metal layers, respectively. The first and second metal layers contain different metals. In some examples, a first insulating film is disposed between the first metal layer and the second via to electrically insulate the second via from the first metal layer, and a second insulating film is disposed between the second metal layer and the first via to electrically insulate the first via from the second metal layer. A method for forming the electronic component includes use of first and second etchants to selectively etch the first and second metal layers.