An electrode component with electrode layers formed on intermediate layers includes a ceramic substrate, two intermediate layers formed on two opposite surfaces of the ceramic substrate, two electrode layers respectively formed on the two intermediate layers, two lead wires respectively connected to the electrode layers, and an insulating layer enclosing the ceramic substrate, the intermediate layers, the electrode layers, and portions of the two lead wires. The intermediate layer formed between the ceramic substrate and the electrode layer replaces the fabrication means for conventional silver electrode layer to provide good binding strength between the ceramic substrate and the electrode layer. Besides same electrical characteristics for original products, the electrode component can get rid of the use of precious silver in screen printed silver electrode and avoid pollution caused by evaporation and thermal dissolution of organic solvent while lowering the ohmic contact resistance between the electrode layer and the ceramic substrate.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A high-power thin film resistor includes a substrate, a resistance layer, an internal electrode layer, a passivation layer and a thermal conductive layer. The resistance layer is disposed on the substrate, and the internal electrode layer has a middle internal electrode area and two terminal internal electrode areas. The resistance layer is divided into a middle resistance area and two terminal resistance areas by the middle internal electrode area and the two terminal internal electrode areas. The passivation layer covers portions of the resistance layer and the internal electrode layer. The thermal conductive layer is disposed on the passivation layer, wherein the thermal conductive layer has two thermal conductors and a gap between the two thermal conductors. The middle internal resistance area and the two terminal resistance areas form a series resistance, and the two terminal resistance areas have the same resistance value.

A thin film resistor and a method of fabricating the same are provided. The thin film resistor includes a substrate with plural recesses, a first end electrode, a second end electrode, a resistor layer and an inner electrode disposed on the resistor layer. The first end electrode is disposed on one of two end portions of an upper surface of the substrate, while the second end electrode is disposed on another one of the two end portions of an upper surface of the substrate. The resistor layer is disposed on the upper surface of the substrate and disposed within the recesses conformally. Therefore, the resistor layer can have greater surface area and longer length, thereby increasing resistance.

The present invention provides a ring varistor for use in DC micromotor including a ring varistor substrate having nonlinear volt-ampere characteristics and at least three independent electrodes evenly sintered on an end face of the ring varistor substrate. The electrode gap between two adjacent electrodes consists of two straight parallel edges of the two adjacent electrodes, and an inner and an outer concentric arc on the substrate ring, the electrode gap is not orthogonal to the ring. Due to the asymmetry arrangement of the surface electrodes and the electrode gaps, the electrode materials and the substrate materials with different thermal conductivity have no contact cross distribution with each other at the radial electrode gap. During welding, the heat shock is transmitted asymmetrically through the asymmetric electrodes, to improve the uniformity of the heat conduction distribution of the varistor and reduce the defective rate of the substrate welding fracture.

The occurrence of granular plating due to reflow heating during mounting is suppressed. An electronic component includes an electric element, a frame terminal, and an exterior body. The frame terminal includes a plating layer on a surface of the frame terminal, and is electrically connected to the electric element. The exterior body covers the electric element and a part of the frame terminal. The frame terminal includes a covered portion, and an exposed portion exposed from the side surface of the exterior body. The exposed portion includes a first bent portion where the frame terminal is bent along the side surface, and a first extension portion extending from the first bent portion toward the bottom surface of the exterior body. The plating layer near the first bent portion of the first extension portion has a thickness greater than a thickness of the plating layer in the covered portion.

A chip resistor includes a resistive element, a first conductive underlying layer, a second conductive underlying layer, a first electrode, and a second electrode. The first electrode includes a first electrode layer. The second electrode includes a second electrode layer. A first electrical resistivity of the first conductive underlying layer is higher than a second electrical resistivity of the first electrode layer and higher than a third electrical resistivity of the resistive element. A fourth electrical resistivity of the second conductive underlying layer is higher than a fifth electrical resistivity of the second electrode layer and higher than the third electrical resistivity of the resistive element.

A chip resistor includes an insulating substrate, a resistance element, and an electrode. The resistance element includes Cr, Si, and N and is disposed on the insulating substrate. The electrode includes at least one refractory metal and is disposed on the resistance element. An atomic ratio of Si to Cr in the resistance element is greater than or equal to and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element. An atom percentage of N in the resistance element is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction.

A resistor includes a resistive element, an insulation plate, a protective film, and a pair of electrodes. The resistive element includes a first face and a second face arranged to face in opposite directions in a thickness direction. The insulation plate is on the first face, and the protective film on the second face. The electrodes are spaced apart in a first direction perpendicular to the thickness direction, and held in contact with the resistive element. Each electrode includes a bottom portion opposite to the insulation plate with respect to the resistive element in the thickness direction. Each bottom portion overlaps with a part of the protective film as viewed in the thickness direction. The resistor further includes a pair of intermediate layers spaced apart in the first direction. The intermediate layers are formed of a material electrically conductive and containing a synthetic resin. Each intermediate layer includes a cover portion covering a part of the protective film. The cover portion of each intermediate layer is disposed between the protective film and the bottom portion of one of the electrodes.

A method for manufacturing a shunt resistor is provided. In this method, a resistance piece is attached to an insulating carrier film. An electroplating operation is performed to form an electrode material layer on a surface of the resistance piece. A first mechanical dicing operation is performed to respectively dice the electrode material layer and the resistance piece into plural electrode layers and plural resistance layers to form plural strip structures. Each of the strip structures includes one electrode layer and one resistance layer. A second mechanical dicing operation is performed on the strip structures to dice the electrode layer on each of the strip structures into a first electrode and a second electrode. A third mechanical dicing operation is performed on each of the strip structures to separate each of the strip structures into plural shunt resistors. A trimming operation is performed on each of the shunt resistors.