A metal strip resistor is provided. The metal strip resistor includes a metal strip forming a resistive element and providing support for the metal strip resistor without use of a separate substrate. There are first and second opposite terminations overlaying the metal strip. There is plating on each of the first and second opposite terminations. There is also an insulating material overlaying the metal strip between the first and second opposite terminations. A method for forming a metal strip resistor wherein a metal strip provides support for the metal strip resistor without use of a separate substrate is provided. The method includes coating an insulative material to the metal strip, applying a lithographic process to form a conductive pattern overlaying the resistive material wherein the conductive pattern includes first and second opposite terminations, electroplating the conductive pattern, and adjusting resistance of the metal strip.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A varistor device for voltage-surge-protecting an electronic circuit at a cryogenic temperature comprises an electric lead composed of a superinsulator material, and electrical contact elements. The electrical contact elements are for connecting different positions along the electric lead to the electronic circuit. The electrical contact elements are in electric contact with the electric lead at the different positions along the electric lead. The electric lead is adapted to provide a superinsulating state or a cooper-pair insulating state at the cryogenic temperature, and to provide a non-linear resistance between the different positions at the cryogenic temperature.

An electronic component includes a body part and a via part. The body part includes first and second metal layers disposed with at least one dielectric layer interposed therebetween. The via part is disposed in the body part and includes first and second vias penetrating through the body part and selectively connected to the first and second metal layers, respectively. The first and second metal layers contain different metals. In some examples, a first insulating film is disposed between the first metal layer and the second via to electrically insulate the second via from the first metal layer, and a second insulating film is disposed between the second metal layer and the first via to electrically insulate the first via from the second metal layer. A method for forming the electronic component includes use of first and second etchants to selectively etch the first and second metal layers.

In some embodiments of the present disclosure, a method for manufacturing a thin film resistor after completing a copper chemical mechanical polishing (CMP) process on a copper process module may include: depositing a dielectric barrier layer across at least two structures; depositing a second dielectric layer atop the dielectric barrier as a hard mask; patterning a trench using photo lithography; etching the trench through the hard mask and stopping in or on the dielectric barrier; removing any remaining photoresist from the photo lithography process; etching the trench through the dielectric barrier thereby exposing a copper surface for each of the at least two copper structures; and depositing thin-film resistor material into the trench and bridging across the resulting at least two exposed copper surfaces.

A sensor element, a sensor arrangement, and a method for manufacturing a Sensor element are disclosed. In an embodiment, a sensor element includes a ceramic main body and at least one electrode arranged at the main body, wherein the electrode has at least one layer comprising nickel.

A ceramic electronic component includes a rectangular or substantially rectangular parallelepiped-shaped stack in which a ceramic layer and an internal electrode are alternately stacked and an external electrode provided on a portion of a surface of the stack and electrically connected to the internal electrode. The external electrode includes an inner external electrode covering a portion of the surface of the stack and including a mixture of a resin component and a metal component and an outer external electrode covering the inner external electrode and including a metal component. A volume occupied by the resin component in the inner external electrode is within a prescribed range.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A ceramic electronic component includes a rectangular or substantially rectangular parallelepiped-shaped stack in which a ceramic layer and an internal electrode are alternately stacked and an external electrode provided on a portion of a surface of the stack and electrically connected to the internal electrode. The external electrode includes an inner external electrode covering a portion of the surface of the stack and including a mixture of a resin component and a metal component and an outer external electrode covering the inner external electrode and including a metal component. A volume occupied by the resin component in the inner external electrode is within a prescribed range.