Patent classifications
H01G4/228
Power Factor Correction Capacitors
An apparatus includes a case capable of receiving a plurality of capacitive elements, each capacitor element having at least two capacitors, and each capacitor having a capacitive value. The apparatus also includes a cover assembly with a peripheral edge secured to the case. The cover assembly includes, for each of the plurality of capacitive elements, a cover terminal that extends upwardly from the cover assembly generally at a central region of the cover assembly. Each cover terminal is connected to one of the at least two capacitors of the respective one of the plurality of capacitive elements. The cover assembly also includes, for each of the plurality of capacitive elements, a cover terminal that extends upwardly from the cover assembly at a position spaced apart from the cover terminal generally at the central region of the cover assembly.
CAPACITOR AND METHOD FOR PRODUCING CAPACITOR
A capacitor includes a substrate 2 that has a first principal surface at one side and a second principal surface at another side, a plurality of first internal electrode forming penetrating holes 3 that penetrate through the substrate in a thickness direction, a plurality of second internal electrode forming penetrating holes 4 that penetrate through the substrate in the thickness direction, first internal electrodes 5 that are constituted of conductors embedded inside the first internal electrode forming penetrating holes, and second internal electrodes 6 that are constituted of conductors embedded inside the second internal electrode forming penetrating holes. The plurality of internal electrode forming penetrating holes 3 and 4 that include the plurality of first internal electrode forming penetrating holes 3 and the plurality of second internal electrode forming penetrating holes 4 are disposed in a lattice in a plan view as viewed from a normal direction orthogonal to the first principal surface.
CAPACITOR AND METHOD FOR PRODUCING CAPACITOR
A capacitor includes a substrate 2 that has a first principal surface at one side and a second principal surface at another side, a plurality of first internal electrode forming penetrating holes 3 that penetrate through the substrate in a thickness direction, a plurality of second internal electrode forming penetrating holes 4 that penetrate through the substrate in the thickness direction, first internal electrodes 5 that are constituted of conductors embedded inside the first internal electrode forming penetrating holes, and second internal electrodes 6 that are constituted of conductors embedded inside the second internal electrode forming penetrating holes. The plurality of internal electrode forming penetrating holes 3 and 4 that include the plurality of first internal electrode forming penetrating holes 3 and the plurality of second internal electrode forming penetrating holes 4 are disposed in a lattice in a plan view as viewed from a normal direction orthogonal to the first principal surface.
INTEGRATED STRUCTURE OF CIRCUIT MOLD UNIT OF LTCC ELECTRONIC DEVICE
An LTCC integrated circuit mold unit includes an integrated mold formed by multiple circuit mold units which are superposed, electrodes sheathed in the integrated mold and conductive wire sections sheathed in the integrated mold. Each circuit mold unit is formed by a ceramic base with an electrode pattern recess and a through hole. A denting depth of the electrode pattern recess is between 0.5 μm and 5000 μm. The through hole penetrates through the ceramic base. An inner diameter of the through hole is above 10 μm. The electrode pattern recess is filled with a conductive material to form one of the electrodes. Each through hole is filled with the conductive material to form one of the conductive wire sections. The conductive wire sections which are vertically adjacent are connected to form a conductive path. The conductive path electrically connects to at least one of the electrodes.
Thin film capacitor and method of manufacturing the same
A capacitor that includes a lower electrode; a dielectric film; an upper electrode; a first protective film that has a first through hole that opens to the upper electrode and a second through hole that opens to the lower electrode, and has a first upper surface; a second protective film that has a second upper surface located higher than the first upper surface of the first protective film; a first terminal electrode electrically connected to the upper electrode through the first through hole, and extends to at least the second upper surface of the second protective film; and a second terminal electrode electrically connected to the lower electrode through the second through hole, and extends to at least the second upper surface of the second protective film.
Thin film capacitor and method of manufacturing the same
A capacitor that includes a lower electrode; a dielectric film; an upper electrode; a first protective film that has a first through hole that opens to the upper electrode and a second through hole that opens to the lower electrode, and has a first upper surface; a second protective film that has a second upper surface located higher than the first upper surface of the first protective film; a first terminal electrode electrically connected to the upper electrode through the first through hole, and extends to at least the second upper surface of the second protective film; and a second terminal electrode electrically connected to the lower electrode through the second through hole, and extends to at least the second upper surface of the second protective film.
Capacitor comprising a plurality of capacitor units
A capacitor has at least two capacitor units, wherein a first capacitor unit and a second capacitor unit of the at least two capacitor units have opposite polarities.
Capacitor comprising a plurality of capacitor units
A capacitor has at least two capacitor units, wherein a first capacitor unit and a second capacitor unit of the at least two capacitor units have opposite polarities.
ECA oxide-resistant connection to a hermetic seal ferrule for an active implantable medical device
A hermetically sealed feedthrough assembly for an active implantable medical device having an oxide-resistant electrical attachment for connection to an EMI filter, an EMI filter circuit board, an AIMD circuit board, or AIMD electronics. The oxide-resistant electrical attachment, including an oxide-resistant sputter layer 165 is disposed on the device side surface of the hermetic seal ferrule over which an ECA stripe is provided. The ECA stripe may comprise one of a thermal-setting electrically conductive adhesive, an electrically conductive polymer, an electrically conductive epoxy, an electrically conductive silicone, an electrically conductive polyimides, or an electrically conductive polyimide, such as those manufactured by Ablestick Corporation. The oxide-free electrical attachment between the ECA stripe and the filter or AIMD circuits may comprise one of gold, platinum, palladium, silver, iridium, rhenium, rhodium, tantalum, tungsten, niobium, zirconium, vanadium, and combinations or alloys thereof.
ECA oxide-resistant connection to a hermetic seal ferrule for an active implantable medical device
A hermetically sealed feedthrough assembly for an active implantable medical device having an oxide-resistant electrical attachment for connection to an EMI filter, an EMI filter circuit board, an AIMD circuit board, or AIMD electronics. The oxide-resistant electrical attachment, including an oxide-resistant sputter layer 165 is disposed on the device side surface of the hermetic seal ferrule over which an ECA stripe is provided. The ECA stripe may comprise one of a thermal-setting electrically conductive adhesive, an electrically conductive polymer, an electrically conductive epoxy, an electrically conductive silicone, an electrically conductive polyimides, or an electrically conductive polyimide, such as those manufactured by Ablestick Corporation. The oxide-free electrical attachment between the ECA stripe and the filter or AIMD circuits may comprise one of gold, platinum, palladium, silver, iridium, rhenium, rhodium, tantalum, tungsten, niobium, zirconium, vanadium, and combinations or alloys thereof.