Patent classifications
H01G4/228
Metal terminal-equipped electronic component and method for producing metal terminal- equipped electronic component
A metal terminal-equipped electronic component includes: an electronic component having a terminal electrode; a conductive cloth member joined to the terminal electrode as a metal terminal; and a cushioning member supporting the electronic component and the cloth member, in which the cloth member is joined to at least a mounting surface of the cushioning member and a joint surface of the cushioning member to which the electronic component is joined, and the terminal electrode of the electronic component is joined to the cloth member on the joint surface of the cushioning member.
Thin film capacitor
A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.
Thin film capacitor
A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.
Power Conversion Device
It is an object of the present invention to enhance connection reliability of terminals while enhancing assembling performance. A power conversion device according to the present invention includes: a power semiconductor module having a power terminal; a capacitor module for supplying smoothed power to the power semiconductor module; and a mold bus bar in which a conductor part for electrically connecting the power semiconductor module and the capacitor module is sealed by a resin material, wherein the capacitor module has a positive capacitor terminal and a negative capacitor terminal, the power terminal, the positive capacitor terminal, and the negative capacitor terminal are formed such that the main surfaces of the terminals face in the same direction, and the mold bus bar has a first terminal contacting with the main surface of the power terminal, a second terminal contacting with the main surface of the positive capacitor terminal, and a third terminal contacting with the main surface of the negative capacitor terminal.
Capacitor Module
A capacitor module includes a circuit board including a positive conductor part and a negative conductor part, and capacitors mounted on the circuit board. The capacitors have the same capacitance and the same inner current path structure. The capacitors are arranged in a direction perpendicular to main current directions of the inner current path structures of the capacitors. Each adjacent two of the capacitors are connected to the positive conductor part and the negative conductor part such that the main current directions thereof are opposite in direction to each other.
Multilayer capacitor
A multilayer capacitor includes a body including a stacked structure formed of a plurality of dielectric layers, and a plurality of internal electrodes, and external electrodes, wherein the body is divided into a central portion, and cover portions, the body has first to sixth surfaces, in the body, the cover portion forms corner edges having a curved surface, and if a radius of curvature of each of the corner edges at which the third and fourth surfaces meet the fifth and sixth surfaces refers to R1, and a radius of curvature of each of the corner edges at which the third and fourth surfaces meet the first and second surfaces refers to R2, a relationship of R1>R2 is satisfied, and a width of an internal electrode disposed in the cover portion is narrower than a width of an internal electrode disposed in the central portion.
Multilayer capacitor
A multilayer capacitor includes a body including a stacked structure formed of a plurality of dielectric layers, and a plurality of internal electrodes, and external electrodes, wherein the body is divided into a central portion, and cover portions, the body has first to sixth surfaces, in the body, the cover portion forms corner edges having a curved surface, and if a radius of curvature of each of the corner edges at which the third and fourth surfaces meet the fifth and sixth surfaces refers to R1, and a radius of curvature of each of the corner edges at which the third and fourth surfaces meet the first and second surfaces refers to R2, a relationship of R1>R2 is satisfied, and a width of an internal electrode disposed in the cover portion is narrower than a width of an internal electrode disposed in the central portion.
Interposer and electronic component including the same
An interposer includes an interposer body; first and second lower patterns spaced apart from each other on a lower surface of the interposer body; and first and second upper patterns spaced apart from each other on an upper surface of the interposer body. The first and second upper patterns include first and second shape-securing layers spaced apart from each other on the upper surface of the interposer body, and first and second acoustic noise reduction layers disposed on the first and second shape-securing layers, respectively. An electronic component includes a capacitor and the interposer.
Interposer and electronic component including the same
An interposer includes an interposer body; first and second lower patterns spaced apart from each other on a lower surface of the interposer body; and first and second upper patterns spaced apart from each other on an upper surface of the interposer body. The first and second upper patterns include first and second shape-securing layers spaced apart from each other on the upper surface of the interposer body, and first and second acoustic noise reduction layers disposed on the first and second shape-securing layers, respectively. An electronic component includes a capacitor and the interposer.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a stacked structure, first conductive terminals and second conductive terminals. The stacked structure includes a first semiconductor component having a first area and a second semiconductor component stacked on the first semiconductor component and having a second area smaller than the first area, wherein an extending direction of the first area and an extending direction of the second area are perpendicular to a stacking direction of the first semiconductor component and the second semiconductor component. The first conductive terminals are located on the stacked structure, electrically coupled to the first semiconductor component and aside of the second semiconductor component. The second conductive terminals are located on the stacked structure and electrically coupled to the second semiconductor component.