Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.

An apparatus for and a method of inspecting a substrate in which a charged particle beam is arranged to impinge on a portion of the substrate and a first light beam having a first wavelength and a second light beam having a second wavelength different from the first wavelength are also arranged to impinge on the portion of the substrate.

An adjustable attenuation optical unit that may include a lightguide that includes a core, wherein the core comprises an output, an input and an exterior surface; and an adjustable attenuator that is configured to define an interfacing parameter related to an area of the exterior surface thereby receiving at least some of the light that impinges on the area.

Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

Provided is an aberration corrector having a plurality of magnetic poles including a first magnetic pole and further magnetic poles, a ring that magnetically connects the plurality of magnetic poles with one another, the ring having a constant spacing to at least the first magnetic pole, a plurality of magnetic field modulators including a first magnetic field modulator and further magnetic field modulators, and a plurality of guides including a first guide and further guides; wherein the first magnetic field modulator includes a soft magnetic material, wherein the first magnetic field modulator is disposed in a first position, the first position being one of the following: adjacent to a first air gap separating the first magnetic pole and the ring, or at an inner ring surface or radially outward of the inner ring surface along an axis of the first magnetic pole, and wherein the first guide constrains the first magnetic field modulator to positions along a first axis substantially parallel to or coincident with the axis of the first magnetic pole.

To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

The invention relates to a workstation (1), a preparation station (2) and a method for manipulating an electron microscopy grid assembly (3). The workstation (1) comprises a first compartment (101), a first gas inlet (102) for generating an overpressure in the first compartment (101), a first glove (104) and a second glove (105), each being fixed in a respective opening (106, 107) of the workstation (1), wherein the first glove (104) and the second glove (105) are movable in the first compartment (101) to manipulate objects in the first compartment (101), wherein the workstation (1) comprises a port (109) for providing a transfer device (4) for an electron microscopy grid assembly (3) in the first compartment (101). The preparation station (2) comprises a coolant reservoir (201, 202), a first part (210) configured to hold a shuttle (6) for holding an electron microscopy grid assembly (3) in a fixed orientation, wherein the preparation station (2) is configured such that the first part (210) is submergable in the cryogenic coolant when the coolant reservoir (201, 202) contains the cryogenic coolant.

The invention relates to method and system configured for material analysis and mineralogy. At least one image based on first emission from a sample is provided. First spectra of the sample based on second emissions from the second scan locations of the image are provided. A confidence score is calculated for every first spectrum, and second scan location(s) with confidence score(s) below a threshold value are selected. Second emissions from the selected second scan location(s) are acquired to provide new image and determine new second scan locations within the respective new image.

A pattern inspection apparatus includes an actual outline image generation circuit to generate an actual outline image of a predetermined region defined by a function, where the gray scale value of each pixel in the predetermined region including plural actual image outline positions on an actual image outline of a figure pattern in an inspection image is dependent on a distance from the center of a pixel concerned to the closest actual image outline position in the plural actual image outline positions, and a reference outline image generation circuit to generate a reference outline image of the predetermined region defined by the function, where a gray scale value of each pixel in the predetermined region is dependent on a distance from the center of a pixel concerned to the closest reference outline position in plural reference outline positions on a reference outline to be compared with the actual image outline.