A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

A high-frequency power supply device, which outputs high-frequency pulses to a target device on the basis of a synchronous pulse and a clock pulse, and the output control method therefor are such that a period reference signal is generated from output timing information pertaining to the synchronous pulse, an output level signal is generated from output level information, an output stop time is timed on the basis of the period reference signal and an output stop signal is generated, and, when the period reference signal, the output level signal, and the clock pulse are received and a high-frequency pulse is formed on the basis of these signals, transmission of the output level signal is stopped while the output stop signal is being received.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base bonded to a bottom surface of the ceramic base and having a refrigerant flow channel, a plurality of holes extending through the cooling base in an up and down direction, and a heat exchange promoting portion that is provided in an area around at least one of the plurality of holes and that promotes heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface.

A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.

A plasma processing apparatus, which introduces electromagnetic waves having a frequency of the VHF band or higher into a processing container and processes a substrate by using plasma generated from a gas, includes: a stage which is provided inside the processing container and on which the substrate is placed; an electromagnetic wave introducer formed to face an inner wall of the processing container and configured to introduce the electromagnetic waves into the processing container; and a dielectric member provided on the inner wall through which the electromagnetic waves propagate, wherein a first portion of the dielectric member protrudes from the inner wall toward the stage, and wherein a second portion of the dielectric member is inserted into a recess or step portion of the inner wall.

Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.

A plasma processing apparatus of an embodiment includes: a processing container in which a substrate is processed; an upper electrode that is installed in the processing container; a substrate placement table that includes a lower electrode facing the upper electrode and on which the substrate is placed; an outer circumferential ring that is arranged on an outer edge portion of the substrate placement table and surrounds a periphery of the substrate; and a power supply that supplies power to at least one of the upper electrode and the lower electrode to generate plasma in the processing container, in which the outer circumferential ring has a pattern including a component of a deposition film generated by a plasma reaction on an outermost surface.

Described herein is a technique capable of cleaning a surrounding structure of a substrate placing surface in an apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate mounting plate provided with a substrate non-placing surface and a plurality of substrate placing surfaces; a rotator configured to rotate the substrate mounting plate; a plasma generator configured to generate plasma such that a plasma density over the substrate non-placing surface is higher than a plasma density over the plurality of the substrate placing surfaces; a process gas supplier configured to supply a process gas into the process chamber; a cleaning gas supplier configured to supply a cleaning gas into the process chamber; and a heater placed below the substrate mounting plate.

An apparatus for processing a substrate is provided. The apparatus comprises a process chamber configured to define an interior space for internally processing a substrate, a substrate support unit configured to support the substrate in the interior space, a dielectric plate disposed above the substrate support unit, an antenna unit disposed over or above the dielectric plate, shaped into a frustum, having a truncated cone or prismoidal shape, and including a through-hole, a microwave application unit configured to apply microwaves to the antenna unit, and a slow-wave plate disposed on the antenna unit.

There is provided a substrate processing apparatus that includes a substrate support configured to support one or more substrates, a process chamber in which the one or more substrates are processed, a gas supplier configured to supply gas, and a plasma generator including a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and a second rod-shaped electrode installed between two first rod-shaped electrodes is grounded; and a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed. Wherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port.