A method for making a multilayered device on an engineered substrate having a substrate coefficient of thermal expansion includes growing a buffer layer on the engineered substrate, and growing a first epitaxial layer on the buffer layer. The first epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.

The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al.sub.2O.sub.3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

Embodiments of this application relate to the field of semiconductor technologies, and provide a composite substrate and a preparation method thereof, a semiconductor device, and an electronic device. The composite substrate includes a bearer layer, a silicon carbide layer, and at least one epitaxial layer. The silicon carbide layer is disposed on the bearer layer and bonded to the bearer layer, and a material of the silicon carbide layer includes monocrystal silicon carbide. The at least one epitaxial layer is disposed on a side that is of the silicon carbide layer and that is away from the bearer layer.

Embodiments of this application relate to the field of semiconductor technologies, and provide composite substrate that comprises: a first silicon carbide layer comprising monocrystalline silicon carbide, and a second silicon carbide layer bonded to the first silicon carbide layer, wherein defect density of at least a part of the second silicon carbide layer is greater than defect density of the first silicon carbide layer.

A method of manufacturing nitride semiconductor substrate, comprising: providing silicon-on-insulator substrate which comprises an underlying silicon layer, a buried silicon dioxide layer and a top silicon layer; forming a first nitride semiconductor layer on the top silicon layer; forming, in the first nitride semiconductor layer, a plurality of notches which expose the top silicon layer; removing the top silicon layer and forming a plurality of protrusions and a plurality of recesses on an upper surface of the buried silicon dioxide layer, wherein each of the plurality of protrusions is in contact with the first nitride semiconductor layer, and there is a gap between each of the plurality of recesses and the first nitride semiconductor layer; and epitaxially growing a second nitride semiconductor layer on the first nitride semiconductor layer, such that the first nitride semiconductor layer and the second nitride semiconductor layer form a nitride semiconductor substrate.

A wafer includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doped regions and a plurality of second doped regions. The first doped regions and the second doped regions are located on a first surface of the semiconductor substrate. The second doped regions contact the first doped regions. The first doped regions and the second doped regions are alternately arranged. Both of the first doped regions and the second doped regions include a plurality of N-type dopants. The doping concentration of the N-type dopants in each of the first doped regions is not greater than the doping concentration of the N-type dopants in each of the second doped regions.

A method includes transferring a layer onto a flexible substrate, the layer being located in a stack on the front face of the substrate. The substrate includes at least one supplementary stack interposed between the stack and the bulk layer of the substrate. This supplementary stack includes at least two layers with thicknesses decreasing in the direction of the front face. The method makes provision, after bonding the flexible substrate on the front face, for successively and gradually removing the various layers of the substrate. Such gradualness makes it possible to transfer a thin layer of silicon, with a thickness of less than 50 nm, onto a flexible substrate.

A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.

In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (Å) and 500 angstroms.