A method for fabricating a semiconductor structure includes forming a plurality of semiconductor fins protruding through a trench isolation region above a substrate. A first gate structure is formed over a first of the plurality of semiconductor fins. A second gate structure is formed over a second of the plurality of semiconductor fins. A gate edge isolation structure is formed laterally between and in contact with the first gate structure and the second gate structure, the gate edge isolation structure on the trench isolation region and extending above an uppermost surface of the first gate structure and the second gate structure. A precision resistor is formed on the gate edge isolation structure, wherein the precision resistor and the first gate structure and second gate structure comprise a same material layer.

A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.

Methods and apparatus for pattern matching and classification are disclosed. In one example of the disclosed technology, a method of performing pattern matching according to a puzzle-matching the methodology includes analyzing an original source layout pattern and determining a signature for the original source layout pattern. A target layout is scanned to search for one or more portions of the target layout that have a signature that matches or is similar to the signature of the original source pattern. Similar patterns are searched based on a signature comparison of the source pattern and the target layout. In some examples of the disclosed technology, it is possible to match partial context to the original source pattern. In some examples, matches can be made in the target layout for different orientations of layout.

Methods and apparatus for pattern matching and classification are disclosed. In one example of the disclosed technology, a method of performing pattern matching according to a puzzle-matching the methodology includes analyzing an original source layout pattern and determining a signature for the original source layout pattern. A target layout is scanned to search for one or more portions of the target layout that have a signature that matches or is similar to the signature of the original source pattern. Similar patterns are searched based on a signature comparison of the source pattern and the target layout. In some examples of the disclosed technology, it is possible to match partial context to the original source pattern. In some examples, matches can be made in the target layout for different orientations of layout.

The inventive concept provides an apparatus and method for removing a film formed on a substrate. A method for treating the substrate includes a primary solvent dispensing step of dispensing an organic solvent onto the substrate to remove a photoresist film on the substrate and an ozone dispensing step of dispensing a liquid containing ozone onto the substrate to remove organic residue on the substrate, after the primary solvent dispensing step.

A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

A heat treatment device includes: a heating plate configured to support and heat a substrate on which a resist film is formed; a chamber configured to cover a processing space above the heating plate; a gas supply configured to supply a gas into the chamber along a gas flow path connected to an inside of the chamber, the gas flow path beginning from an outer periphery of the heating plate and extending along an upper surface of the heating toward an end portion on an outer periphery of the substrate; and an exhaust port configured to evacuate inside of the chamber through exhaust holes that are formed above the processing space and open downwards.

In this work is presented a method for fabrication of high-aspect ratio structures through spalling effect. The spalling is achieved through lithography, etching and sputtering processes, thus providing the flexibility to position the spalled structures according to the application requirements. This method has been successfully demonstrated for metal-oxides and metals. The width of the fabricated structures is dependent on the thickness of the film deposited by sputtering, where structures as small as 20 nm in width have been obtained.

A linearly moving mechanism includes an internal moving body provided within a case body and configured to be moved in a linear direction, the internal moving body being configured to move an external moving body connected to a connection member protruded from the case body through an opening formed at the case body; a seal belt extending in the linear direction and provided within the case body to close the opening, a first surface side of both end portions of the seal belt in a widthwise direction thereof facing an edge portion of the opening while being spaced apart therefrom; and a deformation suppressing member provided to face a second surface side of the both end portions to suppress deformation of the seal belt, the seal belt being connected to the internal moving body to be moved along with a movement of the internal moving body.

An imprint apparatus that forms a pattern of an imprint material on a substrate with use of a mold includes a mold holding unit configured to hold the mold, a suction unit provided at the mold holding unit and configured to suction a gas in a space in which the mold and the substrate face each other, a detector configured to detect particles included in the gas suctioned by the suction unit, and a control unit configured to perform error processing depending on a result of detection performed by the detector.