A semiconductor package includes a substrate, a semiconductor die, a ring structure and a lid. The semiconductor die is disposed on the substrate. The ring structure is disposed on the substrate and surrounds the semiconductor die, where a first side of the semiconductor die is distant from an inner sidewall of the ring structure by a first gap, and a second side of the semiconductor die is distant from the inner sidewall of the ring structure by a second gap. The first side is opposite to the second side, and the first gap is less than the second gap. The lid is disposed on the ring structure and has a recess formed therein, and the recess overlaps with the first gap in a stacking direction of the ring structure and the lid.

A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.

A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.

A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.

A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.

An organic interposer includes dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the dielectric material layers, and die-side bump structures located on a second side of the dielectric material layers. A gap region is present between a first area including first die-side bump structures and a second area including second die-side bump structures. Stress-relief line structures are located on, or within, the dielectric material layers within an area of the gap region in the plan view. Each stress-relief line structures may include straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures. The stress-relief line structures may include the same material as, or may include a different material from, a metallic material of the redistribution interconnect structures or bump structures that are located at a same level.

A semiconductor apparatus a semiconductor module including a semiconductor device and a resin section covering the periphery of the semiconductor device, and a cooler arranged below the semiconductor device. The cooler includes a top plate that is attached to a lower surface of the resin section. The resin section has a protrusion protruding downward from an outer peripheral edge of the lower surface of the resin section. The protrusion includes a first straight section extending in a predetermined direction in a plan view of the semiconductor apparatus, and a first curved section having a curved shape convex inward the semiconductor module and being connected to the first straight section. The top plate includes a first notch that is engageable with the protrusion, and the resin section and the top plate are bonded to each other with an adhesive interposed therebetween.

A package assembly includes an interposer module on a package substrate, a thermal interface material (TIM) film on the interposer module, and a package lid that includes a plate portion on the TIM film and a step region projecting away from the plate portion and located over the TIM film and over an edge region of the interposer module.