A compound metal lid for semiconductor chip package is provided. The compound metal lid includes a first cover and a second cover. The first cover has a first frame body, a plurality of riveting holes, and an upper opening. The riveting holes penetrate through the first frame body and are distributed symmetrically on the first frame body. The upper opening is formed at an inner part of the first frame body, and the riveting holes surround the upper opening. The second cover has a second frame body, a plurality of riveting protrusions, and a lower opening. The riveting protrusions are formed on the upper surface of the second frame body. The lower opening penetrates through the second frame body. The first cover is disposed on an upper surface of the second cover, and the riveting protrusions are correspondingly riveted in the riveting holes.

A compound metal lid for semiconductor chip package is provided. The compound metal lid includes a first cover and a second cover. The first cover has a first frame body, a plurality of riveting holes, and an upper opening. The riveting holes penetrate through the first frame body and are distributed symmetrically on the first frame body. The upper opening is formed at an inner part of the first frame body, and the riveting holes surround the upper opening. The second cover has a second frame body, a plurality of riveting protrusions, and a lower opening. The riveting protrusions are formed on the upper surface of the second frame body. The lower opening penetrates through the second frame body. The first cover is disposed on an upper surface of the second cover, and the riveting protrusions are correspondingly riveted in the riveting holes.

Semiconductor devices and associated systems and methods are disclosed herein. In some embodiments, the semiconductor devices include a package substrate, a stack of dies carried by the package substrate, and one or more radiation shields configured to absorb neutrons from neutron radiation incident on the semiconductor device. The radiation shields can include one or more walls attached to a perimeter portion of the package substrate at least partially surrounding the stack of dies and/or a lid carried over the stack of dies. Each of the radiation shields can include hydrocarbon materials, boron, lithium, gadolinium, cadmium, and like materials that effectively absorb neutrons from neutron radiation. In some embodiments, the semiconductor devices also include a molding material over the stack of dies and the radiation shields, and a hydrocarbon coating over an external surface of the mold material.

Semiconductor devices and associated systems and methods are disclosed herein. In some embodiments, the semiconductor devices include a package substrate, a stack of dies carried by the package substrate, and one or more radiation shields configured to absorb neutrons from neutron radiation incident on the semiconductor device. The radiation shields can include one or more walls attached to a perimeter portion of the package substrate at least partially surrounding the stack of dies and/or a lid carried over the stack of dies. Each of the radiation shields can include hydrocarbon materials, boron, lithium, gadolinium, cadmium, and like materials that effectively absorb neutrons from neutron radiation. In some embodiments, the semiconductor devices also include a molding material over the stack of dies and the radiation shields, and a hydrocarbon coating over an external surface of the mold material.

A compound closed-type metal lid for a semiconductor chip package is provided. The compound closed-type metal lid includes a cover plate, and a frame bottom board. The cover plate has a frame body, and a plurality of riveting holes. The riveting holes penetrate through the frame body and are distributed symmetrically on the frame body. The frame bottom board has a frame body, a plurality of riveting protrusions, and an opening. The riveting protrusions are distributed on an upper surface of the frame body. The cover plate is disposed on an upper surface of the frame bottom board. The riveting protrusions are correspondingly riveted in the riveting holes.

A compound closed-type metal lid for a semiconductor chip package is provided. The compound closed-type metal lid includes a cover plate, and a frame bottom board. The cover plate has a frame body, and a plurality of riveting holes. The riveting holes penetrate through the frame body and are distributed symmetrically on the frame body. The frame bottom board has a frame body, a plurality of riveting protrusions, and an opening. The riveting protrusions are distributed on an upper surface of the frame body. The cover plate is disposed on an upper surface of the frame bottom board. The riveting protrusions are correspondingly riveted in the riveting holes.

A package structure includes a first circuit board, a second circuit board, at least one electronic component, at least one conductive lead, and a molding compound. The first circuit board includes a first circuit layer and a second circuit layer. The second circuit board includes a third circuit layer and a fourth circuit layer. The electronic component is disposed between the first circuit board and the second circuit board. The conductive lead contacts at least one of the second circuit layer and the third circuit layer. The conductive lead has a vertical height, and the vertical height is greater than a vertical distance between the second circuit layer and the third circuit layer. The molding compound covers the first circuit board, the second circuit board, the electronic component, and the conductive lead. The molding compound exposes the first circuit layer and the fourth circuit layer, and the conductive lead extends outside the molding compound.

A gas-permeable package lid of a chip package structure and a manufacturing method thereof are provided. The gas-permeable package lid of the chip package structure includes a lid body, a through hole, and a hydrophobic gas-permeable membrane. The lid body is integrally formed. The through hole penetrates the lid body. The hydrophobic gas-permeable membrane is bonded to the lid body and shields the through hole. A part of the hydrophobic gas-permeable membrane is embedded in the lid body.

A gas-permeable package lid of a chip package structure and a manufacturing method thereof are provided. The gas-permeable package lid of the chip package structure includes a lid body, a through hole, and a hydrophobic gas-permeable membrane. The lid body is integrally formed. The through hole penetrates the lid body. The hydrophobic gas-permeable membrane is bonded to the lid body and shields the through hole. A part of the hydrophobic gas-permeable membrane is embedded in the lid body.

Embodiments of the present invention provide a method (1000) of assembling an electrical circuit comprising one or more copper electrical conductors, the method comprising plating (1010) a surface of the one or more conductors with a layer comprising tin; annealing the plating; applying (1020) solder to at least a portion of the one or more electrical conductors, wherein said solder comprises tin and copper; and annealing the electrical circuit.