A tactile representation device is provided. The tactile representation device includes a substrate and a semiconductor temperature control assembly disposed on the substrate. The substrate includes a plurality of deformable regions and a plurality of node regions that are alternately disposed in a first direction, wherein the deformable regions are deformable but the node regions are not deformable. The semiconductor temperature control assembly includes a plurality of semiconductor temperature control units. Each of the semiconductor temperature control units includes a hot terminal electrode, a P-side electrode, an N-side electrode, a P-type semiconductor, and an N-type semiconductor. Each of the hot terminal electrodes is disposed in each of the deformable regions, and each of the P-side electrodes and each of the N-side electrodes are disposed in each of the node regions.

The present invention relates to an assembly of a temperature regulating device for a semiconductor laser.

The essence of the present invention is that a flat thermally conductive surface of said device is used as a thermally conductive base surface, the assembly further contains two fixing plates which are rigidly fastened to said thermally conductive base surface and adjoin the opposite lateral sides of a lower thermally insulated surface of a thermoelectric element, said surface being in contact with the thermally conductive base surface to prevent the longitudinal and transverse displacements of the thermoelectric element along the thermally conductive base surface, and a thermally conductive plate is rigidly fastened to the thermally conductive base surface and is thermally insulated therefrom.

A memory device comprises multiple memory dice arranged vertically in a stack of memory dice and at least one thermoelectric die contacting the bulk silicon layer of at least one of the memory dice of the multiple memory dice. Each memory die of the multiple memory dice includes an active circuitry layer that includes memory cells of a memory array and a bulk silicon layer. The thermoelectric die is configured to one or both of reduce heat from the memory die when a current is applied to terminals of the thermoelectric die and generate a voltage at the terminals of the thermoelectric die when heat from the memory die is applied to the thermoelectric die.

A memory device comprises multiple memory dice arranged vertically in a stack of memory dice and at least one thermoelectric die contacting the bulk silicon layer of at least one of the memory dice of the multiple memory dice. Each memory die of the multiple memory dice includes an active circuitry layer that includes memory cells of a memory array and a bulk silicon layer. The thermoelectric die is configured to one or both of reduce heat from the memory die when a current is applied to terminals of the thermoelectric die and generate a voltage at the terminals of the thermoelectric die when heat from the memory die is applied to the thermoelectric die.

On-die temperature control for semiconductor die assemblies, and associated systems and methods are disclosed. In an embodiment, a semiconductor device assembly includes first and second semiconductor dies directly bonded to each other. The semiconductor dies each includes conductive pads and resistive heating components in a dielectric layer, where the resistive heating components are located proximate to the conductive pads to supply localized thermal energy to the conductive pads in response to electric current flowing through the resistive heating components. In some embodiments, the conductive pads of the first semiconductor die are directly bonded to the conductive pads of the second semiconductor die at a first temperature less than a second temperature for the thermal expansion of the conductive pads absent the localized thermal energy generated by the resistive heating components.

On-die temperature control for semiconductor die assemblies, and associated systems and methods are disclosed. In an embodiment, a semiconductor device assembly includes first and second semiconductor dies directly bonded to each other. The semiconductor dies each includes conductive pads and resistive heating components in a dielectric layer, where the resistive heating components are located proximate to the conductive pads to supply localized thermal energy to the conductive pads in response to electric current flowing through the resistive heating components. In some embodiments, the conductive pads of the first semiconductor die are directly bonded to the conductive pads of the second semiconductor die at a first temperature less than a second temperature for the thermal expansion of the conductive pads absent the localized thermal energy generated by the resistive heating components.

Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.

Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.

Examples of the present disclosure relate to systems and methods for providing cooling and/or heating in a vehicle. For example, the systems and methods may cool and/or heat a vehicle cabin while the vehicle’s engine is not idling or otherwise in operation, without consuming excessive power stored by a vehicle battery. In example implementations, thermoelectric cooling cells may be used.

An electronic apparatus includes an interface unit including a connection unit, a heat transfer unit, a heat dissipation unit, and a fixation member. The connection unit is attachable to an interface terminal of an external apparatus. The fixation member is couplable to a fixation unit of the external apparatus. When the electronic apparatus is attached to the external apparatus, the heat dissipation unit, the heat transfer unit, and the interface unit are arranged in a layered manner in this order and are thermally coupled, and, along therewith, the fixation member is thermally coupled to the heat dissipation unit and the fixation unit.