A semiconductor package includes a circuit board structure, a first redistribution layer structure and first bonding elements. The circuit board structure includes outermost first conductive patterns and a first mask layer adjacent to the outermost first conductive patterns. The first redistribution layer structure is disposed over the circuit board structure. The first bonding elements are disposed between and electrically connected to the first redistribution layer structure and the outermost first conductive patterns of the circuit board structure. In some embodiments, at least one of the first bonding elements covers a top and a sidewall of the corresponding outermost first conductive pattern.

A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

An electronic package, in which a heat dissipation structure is disposed on a carrier structure to form a packaging space for electronic components to be accommodated in the packaging space, and the electronic components are completely encapsulated by a heat dissipation material to prevent the electronic components exposing from the heat dissipation material so as to improve the heat dissipation effect.

Disclosed is a pressure balancing clamp for a press-pack insulated gate bipolar transistor (IGBT) module. The pressure balancing clamp for a press-pack IGBT module includes a bracket, where the bracket is provided with two longitudinally arranged pressure equalizing plates in a sliding way; the pressure equalizing plates are connected through pressure sensors; the upper and lower ends inside the bracket are respectively connected with the pressure equalizing plates through hydraulic devices and a displacement compensation device; opposite surfaces of the two pressure equalizing plates are respectively provided with heat dissipation and confluence devices. The pressure sensors are in one-to-one correspondence with the hydraulic devices and are electrically connected. The hydraulic devices adjust the pressure according to the readings of the pressure sensors in corresponding directions, so that the pressure of the press-pack IGBT module is balanced.

A semiconductor device includes: an insulating substrate; a semiconductor chip; a base plate; a first heat dissipating material; and a case. The semiconductor chip and a sealing material for sealing the semiconductor chip are housed in the case. The insulating substrate includes an insulating layer and a conductor pattern provided on an upper surface of the insulating layer. The semiconductor chip is joined onto the conductor pattern by a joining material. A lower surface of the insulating substrate and an upper surface of the base plate are in contact with each other with interposition of the first heat dissipating material. The insulating substrate and the base plate are not fixed to each other.

A semiconductor device includes a chip package comprising a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die having an active surface, a back surface opposite to the active surface, and a thermal enhancement pattern on the back surface; and a heat dissipation structure connected to the chip package, the heat dissipation structure comprising a heat spreader having a flow channel for a cooling liquid, and the cooling liquid in the flow channel being in contact with the thermal enhancement pattern.

Memory on Package (MOP) apparatus with reverse CAMM (Compression Attached Memory Module) and compression mount technology (CMT) connector(s). The MOP includes a first (MOP) substrate to which one or more CPUs, SoC, and XPUs that is operatively coupled to one or more CAMMs with a CMT connector(s) disposed between an array of CMT contact pads on the CAMM substrate and an array of CMT contact pad on the substrate. The one or more CAMMs are include multiple memory chips or packages such as LP DDR chips or DDR (S)DRAM chips/packages mounted to an underside of the CAMM substrate via signal coupling means such as a ball grid array (BGA), where the CAMM orientation is inverted such that the memory chips/packages are disposed downward, resulting in a reduced Z-height of the MOP. A MOP may include two CAMMs with a respective CMT connector disposed between the CAMM substrates and the MOP substrate.

A system connects a board to a substrate through an interposer board having compressible connectors through the interposer board. The connectors through the interposer board are compression-based connector pins that extends above and below the interposer board to make electrical contact between the board and the substrate. The system can include a plate to secure the board to the substrate and compress the compression-based connectors of the interposer board.

Enhanced thermal energy transfer systems for semiconductor packages are provided. A thermally conductive member is disposed in the interstitial space between an upper surface of a semiconductor package and a lower surface of a thermal member. The thermally conductive member is disposed above a first portion of the upper surface of the semiconductor package having a relatively higher thermal energy output when the semiconductor package is operating. A thermal interface material is disposed in the interstitial space and a force applied to the thermal member. The thermally conductive member forms a relatively higher pressure region above the first portion of the semiconductor package and a relatively lower pressure region in other portions of the semiconductor package remote from the thermally conductive member. The increased pressure region proximate the thermally conductive member beneficially enhances the flow of thermal energy from the first portion of the semiconductor package to the thermal member.

In the case where as a communication means among two or more control circuit boards corresponding to an on-vehicle environment, a wire harness is mounted, space-saving efficiency and assembly efficiency pose problems. When a board-to-board connector is utilized, arrangement of the control circuit boards cannot freely be performed, due to restriction of predetermined specific dimensions. An electric-power conversion apparatus includes a cooling device having a first surface, a second surface opposite to the first surface, and a hole penetrating the first surface and the second surface, a first control circuit board provided at the first surface side, a second control circuit board provided at the second surface side, and a pin header having a mold portion that partially wraps a connection pin penetrating the hole so as to connect the first control circuit board with the second control circuit board and that is fixed to the cooling device.