A cooling system and method for using the cooling system are described. The cooling system includes a plurality of individual piezoelectric cooling elements spatially arranged in an array extending in at least two dimensions, a communications interface and driving circuitry. The communications interface is associated with the individual piezoelectric cooling elements such that selected individual piezoelectric cooling elements within the array can be activated based at least in part on heat energy generated in the vicinity of the selected individual piezoelectric cooling elements. The driving circuitry is associated with the individual piezoelectric cooling elements and is configured to drive the selected individual piezoelectric cooling elements.

A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

The resin-sealed semiconductor device is configured in such a way that a second bonding material has a higher melting point than a first bonding material made of a solder-bonding material has, in such a way that one of bonding surfaces in each of which a power module and a cooling device are bonded to each other with the first bonding material is the other surface portion of a copper plate, and the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device, and in such a way that the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.

The resin-sealed semiconductor device is configured in such a way that a second bonding material has a higher melting point than a first bonding material made of a solder-bonding material has, in such a way that one of bonding surfaces in each of which a power module and a cooling device are bonded to each other with the first bonding material is the other surface portion of a copper plate, and the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device, and in such a way that the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.

Methods and apparatus for a cooling plate for solid state power amplifiers are provided herein. In some embodiments, a cooling plate of a solid state power amplifier includes a body having a rectangular shape, a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall; a plurality of holes disposed on a first side of the body configured to mount a plurality of heat generating microelectronic components; and a channel having a plurality of segments disposed within the body and extending from a first port disposed on the first sidewall to a second port disposed on the first sidewall.

Methods and apparatus for a cooling plate for solid state power amplifiers are provided herein. In some embodiments, a cooling plate of a solid state power amplifier includes a body having a rectangular shape, a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall; a plurality of holes disposed on a first side of the body configured to mount a plurality of heat generating microelectronic components; and a channel having a plurality of segments disposed within the body and extending from a first port disposed on the first sidewall to a second port disposed on the first sidewall.

A method for controlling temperature in a temperature control system. The method includes providing a temperature control system including a controller, a first contactor assembly having a first channel system, a plurality of first contacts, each of the first contacts including a portion that is disposed within the first channel system, and one or more of a first exhaust valve or a first inlet valve, and a second contactor assembly having a second channel system, a plurality of second contacts, each of the second contacts including a portion that is disposed within the second channel system, and one or more of a second exhaust valve or a second inlet valve. The method also includes receiving, by the first contactor assembly, a fluid at a first temperature. The method also includes receiving, by the second contactor assembly, the fluid at the first temperature.

A method for controlling temperature in a temperature control system. The method includes providing a temperature control system including a controller, a first contactor assembly having a first channel system, a plurality of first contacts, each of the first contacts including a portion that is disposed within the first channel system, and one or more of a first exhaust valve or a first inlet valve, and a second contactor assembly having a second channel system, a plurality of second contacts, each of the second contacts including a portion that is disposed within the second channel system, and one or more of a second exhaust valve or a second inlet valve. The method also includes receiving, by the first contactor assembly, a fluid at a first temperature. The method also includes receiving, by the second contactor assembly, the fluid at the first temperature.

A power module that includes a semiconductor chip configured to generate heat, a metal layer electrically connected to the semiconductor chip to allow current to flow therethrough, a cooling channel facing the metal layer for dissipating heat out of the semiconductor chip, and a resin layer interposed between the metal layer and the cooling channel and integrally formed in an internal space of the power module.