Techniques for package loading mechanisms are disclosed. In the illustrative embodiment, a base portion of a laptop includes a circuit board on which an integrated circuit component is mounted. A heat sink is mated with the integrated circuit component. A spring presses against part of the chassis of the laptop, pressing the integrated circuit component and the heat sink together, providing strong thermal coupling between them.

Described herein are cooling hardware and methods for cooling a heterogeneous computing architecture. In one embodiment, a system for cooling a heterogeneous computing architecture includes a base stiffener; a top stiffener including a mounting channel; a printed circuit board (PCB) including multiple electronics and chips, the PCB that is attached to the base stiffener; and a cooling device mounted on top of the top stiffener. One or more heat transfer plates (HTP) are inserted into the top stiffener via the mounting channel to transfer heat generated by the hardware modules to the cooling device, while resistance channels inside the top stiffener are designed for ensuring proper loading pressure on the entire assembly.

A chip package structure is disclosed. In one example, the chip package may include a chip, an encapsulation material, and an exposed pad that is electrically conductively connected to the chip. A layer of a porous or dendrite-comprising adhesion promoter is on a surface of the exposed pad. A thermal interface material that is attached to the exposed pad by the layer.

Provided is a semiconductor device including: a circuit board; a wiring pattern; a first semiconductor chip and a second semiconductor chip; a first lead frame; and a second lead frame; wherein the first lead frame and the second lead frame each comprises: a chip joining portion provided above at least a part of the semiconductor chip; a wiring joining portion provided above at least a part of the wiring pattern; and a bridging portion for connecting the chip joining portion and the wiring joining portion; and in the first direction, a space between the bridging portion of the first lead frame and the bridging portion of the second lead frame is smaller than a space between the chip joining portion of the first lead frame and the chip joining portion of the second lead frame.

Provided is a semiconductor device including: a circuit board; a wiring pattern; a first semiconductor chip and a second semiconductor chip; a first lead frame; and a second lead frame; wherein the first lead frame and the second lead frame each comprises: a chip joining portion provided above at least a part of the semiconductor chip; a wiring joining portion provided above at least a part of the wiring pattern; and a bridging portion for connecting the chip joining portion and the wiring joining portion; and in the first direction, a space between the bridging portion of the first lead frame and the bridging portion of the second lead frame is smaller than a space between the chip joining portion of the first lead frame and the chip joining portion of the second lead frame.

The invention relates to a module (1) in which voltages greater than 1,000 V and currents greater than 100 A are applied via supply lines, with an electrically insulating carrier (2), with a connection means (3) which has a material thickness greater than 0.3 mm and is connected to the carrier (2) via a metallization area (4) which is delimited by a first end (23) and a second end (24), with electronic components (19, 20) which are connected to the connection means (3) as required, and with cooling means (14). In order that the power is supplied from the outside via the connection means (3) directly to the module and thus the bonding processes that are customary in the prior art are omitted and parasitic inductances on the power supply are avoided, the invention proposes that the connection means (3) protrudes beyond one end (23, 24) of the metallization area (4) at least at one point, is not fixed to the carrier (2) in this area (9) and has contact means (22).

A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

An IC die includes a temperature control element suitable for three-dimensional IC package with enhanced thermal control and management. The temperature control element may assist temperature control of the IC die when in operation. In one example, the temperature control element may have a plurality of thermal dissipating features disposed on a first surface of the IC die to efficiently control and dissipate the thermal energy from the IC die when in operation. A second surface opposite to the first surface of the IC die may include a plurality of devices, such as semiconductors transistors, devices, electrical components, circuits, or the like, that may generate thermal energy when in operation. The temperature control element may provide an IC die with high efficiency of heat dissipation that is suitable for 3D IC package structures and requirements.

An IC die includes a temperature control element suitable for three-dimensional IC package with enhanced thermal control and management. The temperature control element may assist temperature control of the IC die when in operation. In one example, the temperature control element may have a plurality of thermal dissipating features disposed on a first surface of the IC die to efficiently control and dissipate the thermal energy from the IC die when in operation. A second surface opposite to the first surface of the IC die may include a plurality of devices, such as semiconductors transistors, devices, electrical components, circuits, or the like, that may generate thermal energy when in operation. The temperature control element may provide an IC die with high efficiency of heat dissipation that is suitable for 3D IC package structures and requirements.