Packaged semiconductor device having a heat sink, wherein the heat sink has a top, a bottom, lateral surfaces that connect the top to the bottom, and, extending within the heat sink, a cooling structure with an inlet line as well as an outlet line for a cooling medium, and is composed of an electrically conductive material with a first coefficient of thermal expansion at the top and with a second coefficient of thermal expansion at the bottom, a die is arranged on each of the top and the bottom of the heat sink and is connected to the heat sink in an electrically conductive manner, the coefficients of thermal expansion of the top and of the bottom of the heat sink correspond in each case to the coefficient of thermal expansion of the die arranged thereon or differ from the coefficient of thermal expansion of the die arranged thereon by at most 10% or by at most 20%.

Packaged semiconductor device having a heat sink, wherein the heat sink has a top, a bottom, lateral surfaces that connect the top to the bottom, and, extending within the heat sink, a cooling structure with an inlet line as well as an outlet line for a cooling medium, and is composed of an electrically conductive material with a first coefficient of thermal expansion at the top and with a second coefficient of thermal expansion at the bottom, a die is arranged on each of the top and the bottom of the heat sink and is connected to the heat sink in an electrically conductive manner, the coefficients of thermal expansion of the top and of the bottom of the heat sink correspond in each case to the coefficient of thermal expansion of the die arranged thereon or differ from the coefficient of thermal expansion of the die arranged thereon by at most 10% or by at most 20%.

The disclosed technology relates to microelectronic devices that can dissipate heat efficiently. In some aspects, such a microelectronic device includes a first semiconductor element and at least one second semiconductor element disposed on the first semiconductor element. The microelectronic device may further include a fluidic cooling unit disposed on the first semiconductor element. In some embodiment, the fluidic cooling unit may include a cavity structure to contain a fluid. In some embodiment, the fluidic cooling unit may include a thermal pathway to transfer heat away from the first semiconductor element.

The disclosed technology relates to microelectronic devices that can dissipate heat efficiently. In some aspects, such a microelectronic device includes a first semiconductor element and at least one second semiconductor element disposed on the first semiconductor element. The microelectronic device may further include a fluidic cooling unit disposed on the first semiconductor element. In some embodiment, the fluidic cooling unit may include a cavity structure to contain a fluid. In some embodiment, the fluidic cooling unit may include a thermal pathway to transfer heat away from the first semiconductor element.

An integrated circuit assembly may be formed having a substrate core, wherein the substrate core includes at least one heat transfer fluid channel formed therein, a first build-up layer formed on a first surface of the substrate core, and a second build-up layer formed on a second surface of the substrate core, and methods of fabricating the same. In embodiments of the present description, the integrated circuit structure may include at least one integrated circuit device formed within at least one of the first build-up layer and the second build-up layer. The embodiments of the present description allow for cooling within the substrate, which may significantly reduce thermal damage to the components of the substrate and/or integrated circuit devices within the substrate.

A component which is configured to switch an electrical signal, the component includes an insulating substrate bearing a semiconductor chip which ensures switching of the signal; a sole plate on which the substrate is secured, the sole plate being configured to discharge heat emitted during switching of the component; a conductive plane positioned between the sole plate and the insulating substrate, the conductive plane being insulated electrically against the sole plate; a specific component with impedance of at least 1 Ohm and/or at least 1 .Math.H, by means of which the conductive plane is connected to a reference voltage.

A component which is configured to switch an electrical signal, the component includes an insulating substrate bearing a semiconductor chip which ensures switching of the signal; a sole plate on which the substrate is secured, the sole plate being configured to discharge heat emitted during switching of the component; a conductive plane positioned between the sole plate and the insulating substrate, the conductive plane being insulated electrically against the sole plate; a specific component with impedance of at least 1 Ohm and/or at least 1 .Math.H, by means of which the conductive plane is connected to a reference voltage.

A microprocessor assembly adapted for fluid cooling can include a semiconductor die mounted on a substrate. The semiconductor die can include an integrated circuit with a two-dimensional and/or three-dimensional circuit architecture. The assembly can include a heat sink module in thermal communication with the semiconductor die. The heat sink module can include an inlet port fluidly connected to an inlet chamber, a plurality of orifices fluidly connecting the inlet chamber to an outlet chamber, and an outlet port fluidly connected to the outlet chamber. When pressurized coolant is delivered to the inlet chamber, the plurality of orifices can provide jet streams of coolant into the outlet chamber and against a surface to be cooled to provide fluid cooling suitable to control a semiconductor die temperature during operation.

A microprocessor assembly adapted for fluid cooling can include a semiconductor die mounted on a substrate. The semiconductor die can include an integrated circuit with a two-dimensional and/or three-dimensional circuit architecture. The assembly can include a heat sink module in thermal communication with the semiconductor die. The heat sink module can include an inlet port fluidly connected to an inlet chamber, a plurality of orifices fluidly connecting the inlet chamber to an outlet chamber, and an outlet port fluidly connected to the outlet chamber. When pressurized coolant is delivered to the inlet chamber, the plurality of orifices can provide jet streams of coolant into the outlet chamber and against a surface to be cooled to provide fluid cooling suitable to control a semiconductor die temperature during operation.

Semiconductor device assemblies having stacked semiconductor dies and thermal transfer devices that include vapor chambers are disclosed herein. In one embodiment, a semiconductor device assembly includes a first semiconductor die having a base region, at least one second semiconductor die at the base region, and a thermal transfer device attached to the first and second dies. The thermal transfer device includes an encapsulant at least partially surrounding the second die and a via formed in the encapsulant. The encapsulant at least partially defines a cooling channel that is adjacent to a peripheral region of the first die. The via includes a working fluid and/or a solid thermal conductor that at least partially fills the channel.