Improving motion sensor robustness utilizing a room-temperature-volcanizing (RTV) material via a solder resist dam is presented herein. A sensor package comprises: a first semiconductor die; a second semiconductor die that is attached to the first semiconductor die to form a monolithic die; and a substrate comprising a top portion and a bottom portion, in which the top portion comprises a plurality of solder resist dams, the monolithic die is attached to the top portion of the substrate via the RTV material being disposed in a defined area of the top portion of the substrate, and the bottom portion of the substrate comprises electrical terminals that facilitate attachment and electrical coupling of signals of the sensor package to a printed circuit board.

There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.

A gang clip includes a plurality of clips formed from a metal each having a center region oriented along a first plane and an angled clip foot having a foot height, a length and a bend angle sufficient to electrically contact a lead terminal of the leadframe to be used to form a device. Adjacent ones of the plurality of clips are joined to one another by a first tie bar also oriented along the first plane. The first tie bar extends to a saw street region located between adjacent ones of the clips. A second tie bar attached to the first tie bar is positioned in the saw street region.

A wire bonding apparatus according to an embodiment bonds a wire to a bonding portion by generating an ultrasonic vibration in a state of pressing the wire onto the bonding portion. The wire bonding apparatus includes a bonding tool that causes the wire to contact the bonding portion and applies a load, an ultrasonic horn that generates the ultrasonic vibration, a load sensor that continuously detects the load applied from the bonding tool to the bonding portion, and a controller that controls the operation of the bonding tool and the ultrasonic horn. The controller analyzes data of the load output from the load sensor between when the wire contacts the bonding portion and when the ultrasonic vibration is generated, and controls the operation of the bonding tool and the ultrasonic horn based on an analysis result.

A described example includes: an antenna formed in a first conductor layer on a device side surface of a multilayer package substrate, the multilayer package substrate including conductor layers spaced from one another by dielectric material and coupled to one another by conductive vertical connection layers, the multilayer package substrate having a board side surface opposite the device side surface; and a semiconductor die mounted to the device side surface of the multilayer package substrate spaced from and coupled to the antenna.

A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, a molding member on the package substrate to cover at least a portion of the semiconductor chip, and a mechanical reinforcing member provided around the semiconductor chip within the molding member and extending in at least one direction.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

A packaged semiconductor device includes a routable molded lead frame structure with a surface finish layer. In one embodiment, the routable molded lead frame structure includes a first laminated layer including the surface finish layer, vias connected to the surface finish layer, and a first resin layer covering the vias leaving the top surface of the surface finish layer exposed. A second laminated layer includes second conductive patterns connected to the vias, bump pads connected to the second conductive patterns, and a second resin layer covering one side of the first resin layer, the second conductive patterns and the bump pads. A semiconductor die is electrically connected to the surface finish layer and an encapsulant covers the semiconductor die and another side of the first resin layer. The surface finish layer provides a customizable and improved bonding structure for connecting the semiconductor die to the routable molded lead frame structure.

A semiconductor device includes a semiconductor element, a first conductive member, a second conductive member, a connecting member, and a metal plate. The semiconductor element has an element obverse surface and an element reverse surface that are spaced apart from each other in a thickness direction. An obverse surface electrode is provided on the element obverse surface. The first conductive member faces the element reverse surface and is bonded to the semiconductor element. The first conductive member and the second conductive member are spaced apart from each other. The connecting member electrically connects the obverse surface electrode and the second conductive member. The metal plate is interposed between the obverse surface electrode and the connecting member in the thickness direction. The obverse surface electrode and the metal plate are bonded to each other by solid-phase diffusion.

A wire bonding tool includes a tool body with a tubular cavity extending through the tool body and a distal end. The distal end includes a flared opening at an end of the tubular cavity. The tool body further includes at least one protrusion at a level of the distal end.