SPLIT TIE BAR FOR CLIP STABILITY

Abstract

A gang clip includes a plurality of clips formed from a metal each having a center region oriented along a first plane and an angled clip foot having a foot height, a length and a bend angle sufficient to electrically contact a lead terminal of the leadframe to be used to form a device. Adjacent ones of the plurality of clips are joined to one another by a first tie bar also oriented along the first plane. The first tie bar extends to a saw street region located between adjacent ones of the clips. A second tie bar attached to the first tie bar is positioned in the saw street region.

Claims

1. A gang clip, comprising: a plurality of clips comprising a metal each having a center region oriented along a first plane and an angled clip foot having a foot height, a foot length and a bend angle sufficient to make an electrically contact to a lead terminal of a leadframe to be used to form a device, wherein adjacent ones of the plurality of clips are joined to one another by a first tie bar also oriented along the first plane; the first tie bar extending to a saw street region located between adjacent ones of the plurality of clips; a second tie bar attached to the first tie bar positioned in the saw street region.

2. The gang clip of claim 1, wherein the second tie bar has a length within 10% of the clip height.

3. The gang clip of claim 1, wherein the second tie bar is integral with the first tie bar.

4. The gang clip of claim 1, wherein the second tie bar is oriented in a direction essentially perpendicular relative to the first plane being at an angle of 90° plus or minus −5°.

5. The gang clip of claim 1, wherein the second tie bar has a rectangular shape and a width between 100 μm and 300 μm.

6. The gang clip of claim 1, wherein the plurality of clips each include the first tie bar and the second tie bar along a first direction of the first plane, and in a second direction of the first plane perpendicular to the first direction.

7. The gang clip of claim 6, wherein one of the second tie bars is positioned on a side that is opposite relative to the clip foot.

8. A method of assembling a packaged power device, comprising: attaching a power semiconductor device comprising a vertical field effect transistor (FET) or an Isolated Gate Bipolar Transistor (IGBT) to a die pad of a leadframe that also includes lead terminals; attaching a first clip comprising a metal having a center region oriented along a first plane and an angled clip foot having a foot height, a foot length and a bend angle sufficient to electrically contact the lead terminals, with a first tie bar connected to the first clip also oriented along the first plane extending to a saw street region, and a second tie bar attached to the first tie bar positioned in the saw street region, wherein the second tie bar physically contacts the leadframe in the saw street region, and molding to form a mold compound for encapsulating the packaged power device.

9. The method of claim 8, wherein the second tie bar has a length within 10% of the foot height.

10. The method of claim 8, wherein the second tie bar is oriented in a direction essentially perpendicular relative to the first plane being at an angle of 90° plus or minus −5°.

11. The method of claim 8, wherein the first tie bar and the second tie bar are along a first direction of the first plane, and in a second direction of the first plane perpendicular to the first direction.

12. The method of claim 8, wherein the second tie bar is positioned on a side that is opposite relative to the clip foot.

13. A method of assembling a packaged power device, comprising: attaching a first power semiconductor device comprising a first vertical field effect transistor (FET) or a first Isolated Gate Bipolar Transistor (IGBT) to a first die pad of a leadframe that also includes lead terminals; attaching a first clip comprising a metal having a center region oriented along a first plane and an angled bottom clip foot having a bottom foot height, a bottom foot length and a bottom bend angle sufficient to electrically contact the lead terminals, with a first bottom tie bar connected to the first clip also oriented along the first plane extending to a saw street region, and a second bottom tie bar attached to the first tie bar positioned in the saw street region, wherein the second bottom tie bar physically contacts the leadframe in the saw street region; attaching a second power semiconductor device comprising a second vertical FET or a second IGBT on the first clip; attaching a second clip over the second power semiconductor device comprising a metal having a center region oriented along the first plane and an angled top clip foot having a top foot height, a top foot length and a top bend angle sufficient to electrically contact the lead terminals, with a first top tie bar connected to the second clip also oriented along the first plane extending to the saw street region, and a second top tie bar attached to the second tie bar positioned in the saw street region, wherein the second top tie bar physically contacts the first clip in the saw street region, and molding to form a mold compound for encapsulating the power device.

14. The method of claim 13, wherein the first clip and the second clip are both part of a respective gang clip so that a plurality of the packaged power devices are formed by the method, further comprising singulating including sawing through the saw street region to form a plurality of the power packaged devices.

15. The method of claim 13, wherein the leadframe comprises a leadless leadframe.

16. The method of claim 13, wherein the second bottom tie bar and second top tie bar both have a length within 10% of their respective foot height.

17. The method of claim 13, wherein the leadframe further comprises a second die pad positioned lateral to the first die pad, further comprising: attaching a controller die with its top side having bond pads up to the second die pad, and wire bonding to position bond wires between the bond pads and leads of the leadframe that are electrically connected to terminals of the first power semiconductor device by the first clip and to terminals of the second power semiconductor device by the second clip.

18. The method of claim 13, wherein the attaching of the first clip, the second power semiconductor device, and the second clip all comprises forming solder connections.

19. The method of claim 13, wherein the first power semiconductor device comprises the first vertical FET and wherein the second power semiconductor device comprises the second vertical FET.

20. The method of claim 13, wherein the first power semiconductor device comprises the first IGBT and wherein the second power semiconductor device comprises the second IGBT.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Reference will now be made to the accompanying drawings, which are not necessarily drawn to scale, wherein:

[0015] FIG. 1 is an example packaged power device comprising a leadframe including a die pad on the bottom, a bottom vertical FET on the die pad, a bottom clip on top of the bottom FET, a top vertical FET on the bottom clip, and a top clip on top of the top FET. On the ends of the top and bottom clips there can be seen to be conventional tie bars shown as a TC tie bar and a BC tie bar.

[0016] FIG. 2 shows a portion of an array of pre-singulated (interconnected) packaged power devices including a top and a bottom vertical FET that include disclosed clips having split tie bars. A top gang clip provides a top clip for each packaged power device and a bottom gang clip that provides a bottom clip for each packaged power device. The adjacent clips for each gang clip are attached to one another by first tie bars, shown as TC tie bar that includes a dummy tie bar, and a BC tie bar that also includes a dummy tie bar. The dummy tie bars can be seen to be positioned within the saw street region (saw line) which represents the area that will be removed by the final package saw step.

[0017] FIG. 3A shows a perspective view of a portion of a gang clip following a metal etching or other metal patterning step that defines the features of a disclosed clip including a split tie bar comprising a first tie bar and a dummy tie bar.

[0018] FIG. 3B shows a perspective view of a portion of a gang clip following the metal bending step that results in the dummy tie bars being bent at about 90° relative to the first tie bar and the plane of the clip.

[0019] FIG. 4 shows steps in an example method for forming a packaged power device that includes an optional controller die including disclosed clips having split tie bars including a dummy tie bar for assembling stacked vertical power semiconductor devices described as being vertical FETs, according to an example aspect.

DETAILED DESCRIPTION

[0020] Example aspects are described with reference to the drawings, wherein like reference numerals are used to designate similar or equivalent elements. Illustrated ordering of acts or events should not be considered as limiting, as some acts or events may occur in different order and/or concurrently with other acts or events. Furthermore, some illustrated acts or events may not be required to implement a methodology in accordance with this Disclosure.

[0021] Also, the terms “coupled to” or “couples with” (and the like) as used herein without further qualification are intended to describe either an indirect or direct electrical connection. Thus, if a first device “couples” to a second device, that connection can be through a direct electrical connection where there are only parasitics in the pathway, or through an indirect electrical connection via intervening items including other devices and connections. For indirect coupling, the intervening item generally does not modify the information of a signal but may adjust its current level, voltage level, and/or power level.

[0022] For the purposes of this detailed description, the terms clip and gang clip will be understood to refer to preformed conductive interconnects of a power transistor module, which are attached to a power transistor after the power transistor is singulated from a semiconductor wafer comprising a plurality of power transistor die. A clip may be provided as a piece part, while a gang chip is generally provided as a unit of a network (or array) held together by connecting bars, which will be trimmed at time of package singulation. As further practiced herein, the term tie rail is applied to a metallic connection, which is removed in the singulation process (for instance by sawing), while the term tie bar is applied to a metallic connection, which in the case of the first tie bar (but not the dummy tie bar) will be severed in the saw street region, but remains in part after the singulation process.

[0023] The metal for the clip including the split tie bar as noted above may comprise copper, is generally in the thickness range from about 0.1 to 0.3 mm, such as about 0.125 or 0.25 mm thick. Copper is known to have high electrical and high thermal conductivity, suitable for semiconductor devices and especially power transistors. Alternative metals include aluminum and iron-nickel alloys. At least one surface, such as both surfaces, of the clip may have a metallurgical coating preparation to be solderable. One example metallurgical preparation technique comprises the deposition of a layer of tin or a consecutive sequence of layers of nickel, palladium, and (for some devices) gold.

[0024] FIG. 2 shows a portion of an array 250 of pre-singulated (interconnected) packaged power devices shown as packaged power device 200a and 200b that each include clips including disclosed split tie bars. In a typical assembly, there will be several hundred or several thousand pre-singulated (physically interconnected) packaged power devices. A top gang clip 220 provides a top clip for each packaged power device 200a, 200b shown as top clip 235a (“a” used for packaged power device 200a) including a clip foot 236a, 236b (“b” used for packaged power device 200b), and a bottom gang clip 230 that provides a bottom clip shown as 225a and 225b including a clip foot 226a, 226b. As noted above relative to FIG. 1, although the top clips 235a and 235b and the bottom clips 225a and 225b, are all shown having their respective features shown separated by the vertical lines between them, they are all one single piece of metal which provides their respective tie TC tie bars 237a, 237b, and respective BC tie bars 227a, 227b, and their respective clip foot 236a, 236b, and 226a, 226b. Moreover, the dummy tie bars 237d, 227d are also formed from the same single piece of metal as their respective clips.

[0025] The adjacent clips for each gang clip 220, 230 are attached to one another by tie bars, shown as TC tie bar 237a that includes a dummy tie bar 237d for gang clip 230, and a BC tie bar 227b that includes a dummy tie bar 227d for gang clip 220. The dummy tie bars 227d, 237d are shown bent about 90° (oriented into the page, generally 90° plus or minus 5°) relative to a plane of the clips 235a, 235b, 225a, 225b and the BC tie bar 227 and TC tie bar 237. For a 350 μm wide saw street with a 200 μm tie bar width, a maximum angle which will not overlap the tie bar is about 96° at an ideal condition.

[0026] There is a top vertical FET 150a, 150b and a bottom vertical FET 140a, 140b. There is also a LF panel 210 including LF 210a and LF 210b, where the bottom FETs 140a, 140b are on the die pads 111a, 111b. The dummy tie bars 227d, 237d can be seen to be positioned within the saw street region (saw line) 160 which represents the area that will be removed by the final package sawing step. As in FIG. 1 for the packaged power device 100, solder 131 is on the bottom of the clip foot 226a, 226b, and clip foot 236a, 236b, above and below the top FET 150a, 150b, and above the bottom FET 140a, 140b for the respective electrical connections for the pre-singulated packaged power devices.

[0027] FIG. 3A shows a perspective view of a portion of a disclosed gang clip 300 following a metal etching or other metal patterning step, such as using a stamping, or a bending process that defines the features of a disclosed clip including a split tie bar comprising what is shown by example as TC tie bar 337 and disclosed dummy tie bars each shown as 337d. One of the dummy tie bars 337d is shown on a side (shown on a left side) that is opposite relative to the clip foot 336 (shown on the right side). The clip is shown as 335, and its clip foot shown as 336. The master frame is shown as 310.

[0028] Conventional metal etching can be used to form disclosed clips generally comprising chemical etching with an etching mask that is fabricated, and the etching mask is used to etch the pattern on leadframe sheets that generally comprise copper or copper alloy, where non-exposed metal areas are etched out (or removed) after the chemical etching. In the etching of the gang clip, split tie bars are formed comprising conventional tie bars shown as TC tie bar 337 as well as disclosed dummy tie bars 337d which can be fabricated in the same way as the other clip features. The length of dummy tie bar 337d will generally be based on the clip foot's 336 height after being bent which may be referred to herein as being the bend height. After the etching, the dummy tie bars 337d remain oriented in the plane of the clips.

[0029] One generally designs the length of the dummy tie bar 337d to be the same as the clip foot's 336 bend height, generally designed to be equal to the bend height, and as a result generally within a range of plus or minus 10% relative to that, which helps ensure that additional rejects are not induced for the semiconductor power package. If the dummy tie bar 337d is too long relative to the clip foot's 336 bend height, the TC tie bar 337 will be positioned higher in the package as a result, and this can cause a weak (or no) electrical connection of the clip foot 336 to the lead terminal due to the forcing the clip foot 336 upwards. If the dummy tie bar 337d is too short relative to clip foot's 336 bend height, the TC tie bar 337 can be displaced downward during the assembly process.

[0030] FIG. 3B shows a perspective view of a portion of a gang clip 350 following a metal bending step that results in the dummy tie bars 337d being bent at about 90° relative to the plane of the clip 335 and the first tie bar shown as the TC tie bar 337. Bending of the dummy tie bar 337d will generally be performed at the same time as the bending up of the clip foot 336 so that no additional processing is needed due to the addition of the dummy tie bars. Bending of the dummy tie bars 337d is generally provided by a conventional bending process, where 2 separate tools or metals (one to hold and one to bend) are generally used to provide the designed shape for the dummy tie bar 337d and its bend angle.

[0031] An angle of about 90 degrees for the dummy tie bar 337d relative to the plane of the tie bar 337 helps ensure that there is no unwanted exposed metal (e.g., Cu) after sawing. With an angle of about 90° for the dummy tie bars 337d relative to the plane of the tie bar 337 one can generally ensure that the metals are fully removed as they are located only in the saw street area. At another angle besides about 90°, it is recognized that one cannot be sure if there are part(s) of the dummy tie bar 337d which will extend beyond the saw street which can cause unwanted metal that can risk shorting by remaining after sawing/device singulation.

[0032] FIG. 4 shows steps in an example method 400 for forming a packaged power device that includes an optional controller die, including disclosed clips having dummy tie bars for assembling stacked power semiconductor devices described by example as being vertical FETs, according to an example aspect. As noted above, the vertical power semiconductor devices can also comprise IGBT's. Moreover, disclosed methods include a method for forming a packaged power device that includes a single power semiconductor device using a single disclosed clip.

[0033] Step 401 comprises attaching a bottom side of first vertical FET to a first die pad of a leadframe, generally with electrically conductive die attach material, such as a silver particle filled epoxy. Step 402 comprises attaching a bottom clip over the top of the first vertical FET. Solder is generally used for this attachment. As noted in FIG. 4 and described above, the dummy tie bar will be positioned on the leadframe in the saw street region and thus in the saw line. Step 403 comprises die attaching a bottom side of a second vertical FET to the top of the bottom clip. Solder is generally used for this attachment. However, solder is not needed for the dummy tie bar because as described above the dummy tie bar being in the saw street region is removed upon singulating the packages.

[0034] Step 404 comprises attaching a top clip on a top side of the second vertical FET. As noted in FIG. 4, the dummy tie bar will sit on the leadframe along the saw line. Solder is generally used for this attachment. Step 405 comprises die attaching a controller die generally topside up to a second die pad of the leadframe that is positioned lateral to the first die pad. A conventional die attach material or a conductive die attach material may be used for this attachment. Step 406 comprises wirebonding between bond pads on the controller die and the top and the bottom vertical FET as well as to the lead terminals of the leadframe. Step 407 comprises molding. Step 408 comprises marking the packages. Step 409 comprises singulating the packaged power devices to provide individual packaged power packages by sawing through a full thickness in the saw street region.

[0035] Advantages of disclosed clips having split tie bars comprising a first tie bar and a disclosed dummy tie bar include no change in clip fabrication, generally being gang clip fabrication involving metal etching and then bending. The disclosed clip design including a disclosed split tie bar comprising a dummy tie bar as noted above can be implemented by standard etching and bending process of clip. One can maintain a gang clip design for single clip attach process per leadframe panel which is helpful because use of singulated clips will generally involve multiple pick and place. No changes are needed in current clip processing. Use of disclosed split tie bars will essentially eliminate the risk of clip-to-clip (or clip to lead) shorting or high leakage.

[0036] Disclosed aspects can be integrated into a variety of assembly flows to form a variety of different packaged power devices and related products. A variety of package substrates may be used. The die may include various elements therein and/or layers thereon, including barrier layers, dielectric layers, device structures, active elements and passive elements including source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines, conductive vias, etc. Moreover, the die can be formed from a variety of processes including bipolar, insulated-gate bipolar transistor (IGBT), CMOS, BiCMOS and MEMS.

[0037] Those skilled in the art to which this Disclosure relates will appreciate that many variations of disclosed aspects are possible within the scope of the claimed invention, and further additions, deletions, substitutions and modifications may be made to the above-described aspects without departing from the scope of this Disclosure.