A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

A wire bonding apparatus (100) includes a bonding stage (12), a bonding head (20), an XY driving mechanism (30), and a frame (50). The XY driving mechanism (30) includes: an X-direction guide (31) installed to the frame (50); an X-direction slider (32), supported by the X-direction guide (31) and moving in the X direction, an X-direction mover (41) being installed thereto; a Y-direction guide (33) installed to a lower side of the X-direction slider (32); and a Y-direction slider (34), supported by the Y-direction guide (33) and moving in the Y direction, the bonding head (20) being installed thereto. The XY driving mechanism (30) is installed to the frame (50), so that a portion of the Y-direction guide (33) is overlapped with a mounting surface (12a) of a bonding stage (12) above the mounting surface (12a) and behind the mounting stage (12) in the Y direction.

A semiconductor package is provided. A semiconductor package includes a semiconductor package comprising a connecting structure in which a connecting terminal is placed in a lower part, and a semiconductor chip which is placed on the connecting structure and connected to the connecting structure, wherein the connecting structure includes a plurality of wiring layers placed to be stacked, a plurality of insulating layers between the wiring layers, and first and second passivation layers which each covers at least a part of an uppermost layer of the plurality of insulating layers and the wiring layer placed on the uppermost layer, and a through vias which penetrates the plurality of insulating layers, wherein the through via comes into contact with a lower surface of the first passivation layer and an upper surface of the second passivation layer.

A semiconductor package is provided. A semiconductor package includes a wiring structure, which includes a first insulating layer and a first wiring pad inside the first insulating layer a semiconductor chip on the wiring structure, an interposer having one surface facing the semiconductor chip and including a second insulating layer and a second wiring pad inside the second insulating layer, a connecting member connecting the first wiring pad and the second wiring pad, a support member in the first recess and between the wiring structure and the interposer, and a mold layer covering the semiconductor chip. One surface of the wiring structure includes a first recess exposing at least a part of the first insulating layer.

A semiconductor system includes a first semiconductor chip, a second semiconductor chip stacked above the first semiconductor chip, a controller configured to control the first and second semiconductor chips, a first wiring connected between the controller and each of the first and second semiconductor chips and by which a first signal is to be transmitted from the controller to each of the first and second semiconductor chips, a second wiring connected between the controller and the first semiconductor chip and by which a current of the first signal flowing through the first wiring to the first semiconductor chip is to be returned to the controller, and a third wiring connected between the controller and the second semiconductor chip and by which a current of the first signal flowing through the first wiring to the second semiconductor chip is to be returned to the controller.

A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).

Embodiments described herein provide an anisotropic conductive film (ACF) positioned on a semiconductor package and techniques of using the ACF to test semiconductor devices positioned in or on the semiconductor package. In one example, a semiconductor package comprises: a die stack comprising one or more dies; a molding compound encapsulating the die stack; a substrate on the molding compound; a contact pad on a surface of the substrate and coupled to the die stack; a test pad on the surface of the substrate; a conductive path between the contact pad and the test pad, where an electrical break is positioned along the conductive path; and an ACF over the electrical break. Compressing the ACF by a test pin creates an electrical path that replaces the electrical break. Data can be acquired by test pin and provided to a test apparatus, which determines whether the dies in the die stack are operating properly.

Various embodiments relate to a packaged radio frequency (RF) amplifier device implementing a split bondwire where the direct ground connection of an output capacitor is replaced with a set of bondwires connecting to ground in a direction opposite to the wires connecting to the output of a transistor to an output pad. This is done in order to reduce the effects of mutual inductance between the various bondwires associated with the output of the RF amplifier device.

In some examples, a package comprises a semiconductor die and a bond pad formed upon the semiconductor die. The bond pad has a protrusion on a top surface of the bond pad. The package also comprises a metal contact and a bond wire coupled to the protrusion and to the metal contact.

A method of operating a wire bonding machine is provided. The method includes: (a) operating a wire bonding machine during at least one of (i) an automatic wire bonding operation and (ii) a dry cycle wire bonding operation, wherein a bonding force is applied during the operation of the wire bonding machine; and (b) monitoring an accuracy of the bonding force of the wire bonding machine during the at least one of (i) an automatic wire bonding operation and (ii) a dry cycle wire bonding operation.