The present disclosure relates to semiconductor structures and, more particularly, to an integrated thin film resistor with a metal-insulator-metal capacitor and methods of manufacture. The structure includes: a first buffer contact on a substrate; a second buffer contact on the substrate, the second buffer contact being on a same wiring level as the first buffer contact; a resistive film contacting the first buffer contact and the second buffer contact, the resistive film extending on the substrate between the first buffer contact and the second buffer contact; and electrical contacts landing on both the first buffer contact and the second buffer contact, but not directly contacting with the resistive film.

A flexible electronic assembly includes an electronic component, a flexible substrate and a supporting layer. The flexible substrate includes a first surface coupled to the electronic component and a second surface opposite to the first surface. The supporting layer is coupled to the second surface, and the supporting layer includes a plurality of protrusions. In a plan view of the flexible electronic assembly, one of the plurality of protrusions includes at least a rounded corner.

A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.

An apparatus including a dielectric layer; and a set of thin-film resistors arranged in a row extending in a first direction on the dielectric layer, wherein lengths of the set of thin-film resistors in a second direction substantially orthogonal to the first direction are substantially the same, wherein the set of thin-film resistors includes a first subset of one or more thin-film resistors with respective terminals spaced apart by a first distance, and wherein the set of thin-film resistors includes a second subset of one or more thin-film resistors with respective terminals spaced apart by a second distance, the first distance being different than the second distance.

A display assembly includes a display component and a flexible stratum. The flexible stratum includes a first side coupled to the display component and a second side opposite to the first side. The second side includes protruding portions separate apart from each other, and one of the protruding portions includes a side section, a top section, and a tapering section extending from the side section to the top section and having a curved surface.

A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.

A substrate and a manufacturing method therefor, and an electronic device are provided. The substrate includes: a base substrate including a working region, and a non-working region outside of the working region, the non-working region including a peripheral circuit region near the working region and a non-circuit region away from the working region; a peripheral circuit in the peripheral circuit region; a common electrode lead in the non-working region; a common electrode; and a bridging conductive layer made of opaque conductive material in the non-working region and electrically connects the common electrode and the common electrode lead. An orthographic projection of the bridging conductive layer on the base substrate at least partially coincides with an orthographic projection of the peripheral circuit region on the base substrate, and bridging conductive layer is insulated from the peripheral circuit.

The present invention provides a chip component that achieves outstanding LC characteristics. The present invention provides a chip component (1), including: a substrate (12); an inorganic insulating layer (13), formed on the substrate (12); an organic insulating layer (14), formed on the inorganic insulating layer (13); and an LC circuit (6), including a first capacitor (C1) formed in the inorganic insulating layer (13), and a first inductor (L1) formed, in a manner of being electrically connected to the first capacitor (C1), in the organic insulating layer (14).

According to various aspects, a memory cell arrangement includes: a first control line and a second control line; a plurality of memory structures disposed between the first control line and the second control line, wherein each memory structure of the plurality of memory structures comprises a third control line, a first memory cell and a second memory cell; wherein, for each memory structure of the plurality of memory structures, the first memory cell and the second memory cell are coupled to each other by the third control line; wherein, for each memory structure of the plurality of memory structures, the first memory cell is coupled to the first control line and the second memory cell is coupled to the second control line.

A glass core multilayer wiring board includes a glass substrate, a through electrode, a first layer structure, and a second layer structure. A through hole has a diameter decreasing from a first surface toward a second surface. The through electrode is along a side wall of the through hole. The first layer structure is on the first surface and the second layer structure is on the second surface. The second layer structure closes an opening in the second surface defining a bottom section. The through electrode has: a first layer on part of the side wall and on part or all of the bottom section of the through hole closing the opening of the through hole, a second layer covering the first layer, the side wall of the through hole exposed, and the bottom section, and a third layer is located on the second layer.