After forming a doped semiconductor layer on a backside of a semiconductor substrate that has a conductivity type opposite a conductivity type of the doped semiconductor layer so as to provide a p-n junction for a photovoltaic cell, transistors are formed in a front side of the semiconductor substrate. The photovoltaic cell is then electrically connected to the transistors from the front side of the semiconductor substrate using through-dielectric (TDV) via structures embedded in the semiconductor substrate.

A photovoltaic structure includes a substrate; and a plurality of off-axis, doped silicon regions outward of the substrate. The plurality of off-axis, doped silicon regions have an off-axis lattice orientation at a predetermined non-zero angle. A plurality of photovoltaic devices of a first chemistry are located outward of the plurality of off-axis, doped silicon regions. Optionally, a plurality of photovoltaic devices of a second chemistry, different than the first chemistry, are located outward of the substrate and are spaced away from the plurality of off-axis, doped silicon regions.

An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

The present disclosure provides a broadband dual-polarized solar cell antenna and an antenna array. The broadband dual-polarized solar cell antenna includes an antenna dipole layer, an isolation layer, a solar cell layer, and a ground that are arranged sequentially from top to bottom, where the antenna dipole layer is connected to the ground and a radio frequency (RF) coaxial connector through a metal feeding probe structure, the solar cell layer is placed on the ground, the isolation layer is located between the antenna dipole layer and the solar cell layer, and the isolation layer is made of a transparent material. The present disclosure is small in sunlight shielding and high in transparency, and has a broadband dual-polarized wide-angle scanning capability, which ensures performance of the antenna and power generation efficiency of the solar cell, and is highly applicable in engineering.

The present disclosure provides a broadband dual-polarized solar cell antenna and an antenna array. The broadband dual-polarized solar cell antenna includes an antenna dipole layer, an isolation layer, a solar cell layer, and a ground that are arranged sequentially from top to bottom, where the antenna dipole layer is connected to the ground and a radio frequency (RF) coaxial connector through a metal feeding probe structure, the solar cell layer is placed on the ground, the isolation layer is located between the antenna dipole layer and the solar cell layer, and the isolation layer is made of a transparent material. The present disclosure is small in sunlight shielding and high in transparency, and has a broadband dual-polarized wide-angle scanning capability, which ensures performance of the antenna and power generation efficiency of the solar cell, and is highly applicable in engineering.

A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency. The solar cell module may comprise for example a series connected string of N greater than or equal to 25 rectangular or substantially rectangular solar cells having on average a breakdown voltage greater than about 10 volts, with the solar cells grouped into one or more super cells each of which comprises two or more of the solar cells arranged in line with long sides of adjacent solar cells overlapping and conductively bonded to each other, and with no single solar cell or group of <N solar cells in the string of solar cells individually electrically connected in parallel with a bypass diode.

A solar power system and a method for manufacturing the same are provided. The solar power system includes at least one solar power module and a bypass diode module. The at least one solar power module comprises a plurality of solar panels connected in parallel. The bypass diode module has a plurality of bypass diodes connected in series. The at least one solar power module and the bypass diode module are connected in parallel.

A solar power system and a method for manufacturing the same are provided. The solar power system includes at least one solar power module and a bypass diode module. The at least one solar power module comprises a plurality of solar panels connected in parallel. The bypass diode module has a plurality of bypass diodes connected in series. The at least one solar power module and the bypass diode module are connected in parallel.

A method for measuring energy harvested from at least one energy source for use in an access control system, comprising providing an access control device adapted to be at least partially powered by energy harvested from at least one energy source; providing at least one sensor receiving energy from the at least one energy source; providing an energy harvesting manager coupled to the at least one sensor, wherein the energy harvesting manager manages the amount of energy received by the at least one sensor; providing a capacitive storage device coupled to the energy harvesting manager, the capacitive storage device for storing energy harvested from the at least one sensor; charging the capacitive storage device to a voltage high threshold, V-HTH; applying a reference load to the capacitive storage device until the capacitive storage device discharges to a predetermined voltage value, Vo/e, the reference load having a predetermined resistance value; determining a time constant, the time constant defined as the length of time required for the capacitive storage device to discharge to the predetermined voltage value, Vo/e; and determining an exact or near exact capacitance of the capacitive storage device by comparing the time constant to the reference load predetermined value, by the expression: C=RC/RL, where C=capacitance (in farads), RC=time constant (in seconds), and RL=reference load resistance (in ohms).