A device comprising a III-N layer stack featuring a two-dimensional electron gas is disclosed, comprising: —a III-N layer; —a AI-III-N layer on top of the III-N layer; —a passivation layer on top of said AI-III-N layer, the passivation layer comprising Silicon Nitride (SiN); wherein said passivation layer comprises a fully crystalline sub layer at the AI-III-N interface and at least part of the fully crystalline sub layer comprises Al and/or B; and associated methods for manufacturing the device.

The present embodiment provide a method for evaluating anion permeability of a graphene-containing membrane and also to provide a photoelectric conversion device employing a graphene-containing membrane having controlled anion permeability. The method comprises: preparing a measuring apparatus comprising an aqueous solution containing anions, a working electrode containing silver-metal, a counter electrode and a reference electrode; measuring the reaction current I.sub.0 between the silver-metal and the anions while the electrode potential of the working electrode to the counter electrode is being periodically changed and driven under the condition that the electrodes are in contact with the aqueous solution;
measuring the reaction current I.sub.1 under the condition that, instead of the working electrode, the graphene-containing membrane electrically connecting to the working electrode is in contact with the aqueous solution; and
comparing the currents I.sub.0 and I.sub.1 to evaluate anion-permeability of the graphene-containing membrane.

The present embodiment provide a method for evaluating anion permeability of a graphene-containing membrane and also to provide a photoelectric conversion device employing a graphene-containing membrane having controlled anion permeability. The method comprises: preparing a measuring apparatus comprising an aqueous solution containing anions, a working electrode containing silver-metal, a counter electrode and a reference electrode; measuring the reaction current I.sub.0 between the silver-metal and the anions while the electrode potential of the working electrode to the counter electrode is being periodically changed and driven under the condition that the electrodes are in contact with the aqueous solution;
measuring the reaction current I.sub.1 under the condition that, instead of the working electrode, the graphene-containing membrane electrically connecting to the working electrode is in contact with the aqueous solution; and
comparing the currents I.sub.0 and I.sub.1 to evaluate anion-permeability of the graphene-containing membrane.

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor layers, a nitride layer, and an oxide layer. A direction from the second electrode toward the first electrode is aligned with a first direction. A position in the first direction of the third electrode is between the first electrode and the second electrode in the first direction. The first semiconductor layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions in the first direction. The second partial region is between the third and fifth partial regions in the first direction. The nitride layer includes first and second nitride regions. The second semiconductor layer includes first and second semiconductor regions. The oxide layer includes silicon and oxygen. The oxide layer includes first to third oxide regions.

A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.

System comprising an element for capturing and transforming external light into electricity based on the use of doped graphene; an electricity management control board to which are connected: a battery and a generator for supplying the current needed by a hydrolysis machine connected to the generator; a hydrogen tank connected to the hydrolysis machine; an oxygen tank connected to the hydrolysis machine, for use in space-based systems, which can be vented through an exhaust; a fuel cell or hydrogen cell connected to the hydrogen and oxygen tanks and a water deposit connected on one side to the hydrogen cell from which it receives the water generated and on the other to the hydrolysis machine to which it supplies the water. A self-sufficient or autonomous generation system is achieved.

Methods, systems, and devices are disclosed for low noise and high efficiency photoelectric amplification based on cycling excitation process (CEP). In some aspects, a device for amplifying signals of light-induced photocurrent includes an anode connected to a positive terminal of a voltage source; a disordered material layer coupled to the anode, wherein the disordered material layer is structured to have a thickness of 100 nm or less; and a cathode coupled to the disordered material layer and connected to a negative terminal of the voltage source, in which the device is operable to amplify photoexcited carriers based on photon absorption to produce an external quantum efficiency of the device that is at least 100%.

A method to fabricate thin-film photovoltaic devices including a photovoltaic Cu(In,Ga)Se.sub.2 or equivalent ABC absorber layer, such as an ABC.sub.2 layer, deposited onto a back-contact layer characterized in that the method includes at least five deposition steps, during which the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio A.sub.r/B.sub.r, in the third at a ratio A.sub.r/B.sub.r lower than the previous, in the fourth at a ratio A.sub.r/B.sub.r higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements.