A solar battery includes a first electrode, a second electrode, a solar cell, an insulating layer and a gate electrode. The solar cell includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.

A solar battery includes a first electrode, a second electrode, a solar cell, an insulating layer and a gate electrode. The solar cell includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.

An optical voltage source and decoupling device is provided, wherein the optical voltage source has a number N of series-connected semiconductor diodes, each having a p-n junction, the semiconductor diodes are monolithically integrated and together form a first stack with an upper side and an underside, and the number N of the semiconductor diodes of the first stack is greater than or equal to two, the decoupling device has a further semiconductor diode. The further semiconductor diode has a pin junction and, the further semiconductor diode is anti-serially connected with the semiconductor diodes of the first stack. An underside of the further semiconductor diode is materially connected with the upper side of the first stack and the further semiconductor diode forms a total stack together with the first stack.

A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second sub cell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mis-matched with respect to said second subcell.

A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second sub cell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mis-matched with respect to said second subcell.

The present invention relates to a light absorption layer for forming a photoelectric conversion element and an intermediate-band solar cell excellent in quantum efficiency of two-step light absorption, a photoelectric conversion element having the light absorption layer, and an intermediate-band solar cell. The present invention also relates to a method for manufacturing a light absorption layer having an intermediate-band, using a wet process, which method can be expected to greatly reduce costs and expand to use for flexible substrates. The light absorption layer of the present invention has an intermediate-band, wherein quantum dots are dispersed in a matrix of a bulk semiconductor having a band gap energy of 2.0 eV or more and 3.0 eV or less.

A method of designing a nano-rectenna panel (NRP) of a vehicle includes generating one or more performance benchmarks associated with nano-rectenna devices that comprise the NRP. A material for the nano-rectenna devices is identified based on one or more of the one or more performance benchmarks. The method also includes designing the NRP based on the material.

A method of designing a nano-rectenna panel (NRP) of a vehicle includes generating one or more performance benchmarks associated with nano-rectenna devices that comprise the NRP. A material for the nano-rectenna devices is identified based on one or more of the one or more performance benchmarks. The method also includes designing the NRP based on the material.

A solar antenna array may comprise an array of carbon nanotube antennas that may capture and convert sunlight into electrical power. A method for constructing the solar antenna array from a glass top down to aluminum over a plastic bottom such that light passing through the glass top and/or reflected off the aluminum both may be captured by the antennas sandwiched between. Techniques for patterning the glass to further direct the light toward the antennas and techniques for continuous flow fabrication and testing are also described.

A solar antenna array may comprise an array of carbon nanotube antennas that may capture and convert sunlight into electrical power. A method for constructing the solar antenna array from a glass top down to aluminum over a plastic bottom such that light passing through the glass top and/or reflected off the aluminum both may be captured by the antennas sandwiched between. Techniques for patterning the glass to further direct the light toward the antennas and techniques for continuous flow fabrication and testing are also described.