In methods and apparatus for improving the power generated, and thus efficiency of solar cells, a double or triple junction tandem solar cell that has one or two photon filters of the invention in between the solar cell layers, respectively. The photon filter is arranged to reflect photons with wavelength shorter than λx and arranged to be transparent to photons of wavelength longer than λx by focussing the lower energy photons out of small area apertures on the other side of the photon filter and arranging the other side of the photon filter to reflect at least some of the photons of wavelength longer than λx. By using the photon filters of the invention in between the solar cell layers, photons can be trapped between filters to solar cell layers at an energy at which the quantum efficiency of the solar cell layer is the best.

A method includes depositing a first layer including amorphous silicon on a surface of a substrate; depositing a second layer including metal on the first layer; and performing an annealing process at a temperature within a range of 70° C. to 200° C., thereby inducing a silicidation reaction between the first layer and the second layer and forming a third layer comprising a metal silicide in electrical contact with the substrate, resulting in a remaining part of the first layer being between the substrate and the third layer.

A first pixel electrode electrically connected to a first transistor, a second pixel electrode electrically connected to a second transistor, a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode, a second light-emitting layer formed over the second pixel electrode and overlapping the second pixel electrode are provided, the first light-emitting layer includes a quantum-dot light-emitting that emits light of a first color, and the second light-emitting layer includes an organic light-emitting layer that emits light of a second color different from the first color.

A first pixel electrode electrically connected to a first transistor, a second pixel electrode electrically connected to a second transistor, a first light-emitting layer formed over the first pixel electrode and overlapping the first pixel electrode, a second light-emitting layer formed over the second pixel electrode and overlapping the second pixel electrode are provided, the first light-emitting layer includes a quantum-dot light-emitting that emits light of a first color, and the second light-emitting layer includes an organic light-emitting layer that emits light of a second color different from the first color.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, including various adhesives applications.

An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, such as color enhancement, and color enhancement structures containing the same.

A novel electric rectifier for use in a rectenna device is provided. The rectenna device can advantageously be used in a variety of applications. The electric rectifier comprises an integrated structure comprising: a diode structure comprising first and second electrodes located in first and second conductive layers respectively and an insulating layer between them, the diode structure being configured and operable for receiving an input signal and generating output signal indicative thereof, and a compensation structure electrically connected in parallel to said diode structure and being configured to compensate the parasitic capacitance of the diode structure when a frequency spectrum of the input signal is beyond the diode's cutoff frequency.

A novel electric rectifier for use in a rectenna device is provided. The rectenna device can advantageously be used in a variety of applications. The electric rectifier comprises an integrated structure comprising: a diode structure comprising first and second electrodes located in first and second conductive layers respectively and an insulating layer between them, the diode structure being configured and operable for receiving an input signal and generating output signal indicative thereof, and a compensation structure electrically connected in parallel to said diode structure and being configured to compensate the parasitic capacitance of the diode structure when a frequency spectrum of the input signal is beyond the diode's cutoff frequency.

The present disclosure relates to an energy conversion material including: a pair of 2-dimensional active layers; and a property control layer positioned between the 2-dimensional active layers, and the property control layer is changed in any one or more of structure and state depending on an external environmental factor and performs reversible switching between the 2-dimensional active layers.

The present disclosure relates to an energy conversion material including: a pair of 2-dimensional active layers; and a property control layer positioned between the 2-dimensional active layers, and the property control layer is changed in any one or more of structure and state depending on an external environmental factor and performs reversible switching between the 2-dimensional active layers.