Embodiments disclosed herein facilitates the monitoring of direct ultraviolet B (UVB) radiation exposure by a person via a system having a sensor (such as Lanthanum doped lead zirconate titanate (PLZT) thin-film sensors or other ferroelectric-based sensors) sensitive to UVB radiation. The system beneficially provides current real-time dosage information associated with Vitamin D production by the person as well as real-time indication of safe exposure and/or harmful exposure to current UVB radiation conditions while also, in some embodiments, takes into consideration a person's age, skin type and sensitivity, body surface area exposed.

An infrared photodetector includes: a p-type and highly-doped silicon substrate; a metal structure disposed on the silicon substrate; a first electric contact to the silicon substrate; and a second electric contact to the metal structure.

An unreleased thermopile IR sensor and method of fabrication is provided which includes a new thermally isolating material and an ultra-thin material based sensor which, in combination, provide excellent sensitivity without requiring a released membrane structure. The sensor is fabricated using a wafer transfer technique in which a substrate assembly comprising the substrate and new thermally isolating material is bonded to a carrier substrate assembly comprising a carrier substrate and the ultra-thin material, followed by removal of the carrier substrate. As such, temperature restrictions of the various materials are overcome.

An unreleased thermopile IR sensor and method of fabrication is provided which includes a new thermally isolating material and an ultra-thin material based sensor which, in combination, provide excellent sensitivity without requiring a released membrane structure. The sensor is fabricated using a wafer transfer technique in which a substrate assembly comprising the substrate and new thermally isolating material is bonded to a carrier substrate assembly comprising a carrier substrate and the ultra-thin material, followed by removal of the carrier substrate. As such, temperature restrictions of the various materials are overcome.

A vacuum package includes a substrate, a pair of through electrodes that penetrates the substrate, each of the pair of the trough electrodes having first end portion, and a getter that is joined to the first end portions of the pair of the through electrodes, and is heated by electronic conduction via the pair of the through electrodes A portion of the getter between the through electrodes is spaced apart from the substrate.

A vacuum package includes a substrate, a pair of through electrodes that penetrates the substrate, each of the pair of the trough electrodes having first end portion, and a getter that is joined to the first end portions of the pair of the through electrodes, and is heated by electronic conduction via the pair of the through electrodes A portion of the getter between the through electrodes is spaced apart from the substrate.

The light detection element includes a light-sensitive layer configured to generate a voltage when light is applied, a first electrode, and a second electrode. The light-sensitive layer is located between the first electrode and the second electrode. The second electrode is a metal containing at least one element selected from the group consisting of ruthenium, molybdenum, and tungsten.

A flash light emitting diode (LED) package includes a circuit board, a flash LED device disposed on an upper surface of the circuit board n, first and third optical sensors arranged to be adjacent to a first side of the flash LED device on the upper surface of the circuit board and configured to detect light of a first wavelength and light of a second wavelength, respectively, second and fourth optical sensors arranged to be adjacent to a second side of the flash LED device on the upper surface of the circuit board and configured to detect light of the first wavelength and light of the second wavelength, respectively, and an integrated circuit (IC) chip disposed to face a third side between the first and second sides of the flash LED device on the upper surface of the circuit board.

In a described example, an apparatus includes: a photon detector array with a first signal output pad coupled to a photon detector array pixel; a die carrier comprising a readout integrated circuit (ROIC) die and a conductor layer having conductors that couple a first signal input pad on the conductor layer to an input signal lead of the ROIC die; and the first signal output pad coupled to the first signal input pad.

In a described example, an apparatus includes: a photon detector array with a first signal output pad coupled to a photon detector array pixel; a die carrier comprising a readout integrated circuit (ROIC) die and a conductor layer having conductors that couple a first signal input pad on the conductor layer to an input signal lead of the ROIC die; and the first signal output pad coupled to the first signal input pad.