In general, this disclosure is directed to a flexible or stretchable sensor and a method of detecting a substance and/or electromagnetic radiation using said sensor. The sensor comprises a flexible or stretchable substrate, a pair of terminal electrodes disposed on the flexible or stretchable substrate in mutually spaced apart and opposing relation, and a sensing element applied to the flexible or stretchable substrate, between and in electrical contact with the pair of terminal electrodes, wherein the sensing element is responsive to a substance and/or electromagnetic radiation impinging thereon, and wherein when a voltage is applied across the sensor, an electrical signal is generated that is proportional to a resistance value corresponding to a sensing of the substance and/or electromagnetic radiation impinging on the sensing element.

A photoconductor assembly includes a substrate formed of an undoped and single-crystal semiconductor material that is configured to absorb electromagnetic energy, a plurality of electrodes arranged normal to the substrate, and a power supply that applies a voltage to the electrodes for modulating the electromagnetic energy through the substrate.

A photoconductor assembly includes a substrate formed of an undoped and single-crystal semiconductor material that is configured to absorb electromagnetic energy, a plurality of electrodes arranged normal to the substrate, and a power supply that applies a voltage to the electrodes for modulating the electromagnetic energy through the substrate.

An apparatus is provided for nanoantenna-enhanced detection of infrared radiation. The apparatus includes one or more detector pixels. A plurality of detector pixels can constitute a focal plane array (FPA). Each detector pixel carries at least a first and a second subpattern of nanoantenna elements, with elements of the second subpattern interpolated between elements of the first subpattern. Each detector pixel also includes separate collection electrodes for collecting photogenerated current from the respective subpatterns.

An apparatus is provided for nanoantenna-enhanced detection of infrared radiation. The apparatus includes one or more detector pixels. A plurality of detector pixels can constitute a focal plane array (FPA). Each detector pixel carries at least a first and a second subpattern of nanoantenna elements, with elements of the second subpattern interpolated between elements of the first subpattern. Each detector pixel also includes separate collection electrodes for collecting photogenerated current from the respective subpatterns.

A device for detecting electromagnetic radiation is provided, including a substrate; at least one thermal detector placed on the substrate; and an encapsulating structure encapsulating the detector, including a thin encapsulating layer of a material that is transparent to said radiation, extending around and above the detector so as to define with the substrate a cavity in which the detector is located; wherein the thin encapsulating layer comprises a peripheral wall that encircles the detector, and that has a cross section, in a plane parallel to the plane of the substrate, of square or rectangular shape, corners of which are rounded.

A device for detecting electromagnetic radiation is provided, including a substrate; at least one thermal detector placed on the substrate; and an encapsulating structure encapsulating the detector, including a thin encapsulating layer of a material that is transparent to said radiation, extending around and above the detector so as to define with the substrate a cavity in which the detector is located; wherein the thin encapsulating layer comprises a peripheral wall that encircles the detector, and that has a cross section, in a plane parallel to the plane of the substrate, of square or rectangular shape, corners of which are rounded.

Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 μm.

Barrier infrared detectors configured to operate in the long-wave (LW) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers. The absorber may be a p-doped Ga-free InAs/InAsSb material. The p-doping may be accomplished by optimizing the Be doping levels used in the absorber material. The barrier infrared detectors may incorporate individual superlattice layers having narrower periodicity and optimization of Sb composition to achieve cutoff wavelengths of ˜10 μm.

An infrared sensor forming an infrared solid-state imaging device includes a sensor element portion disposed in a package. In the sensor element portion, an absorption structure supported on a substrate is provided. The absorption structure has a structure in which a second insulating film, an absorption film, and a first insulating film are stacked on a reflective film. The first insulating film and the second insulating film are formed so as to have a film thickness with which the index of absorption of infrared radiation entering the absorption structure is maximized with consideration given to the energy loss in an optical transmission path to the absorption structure.