H01L31/09

INFRARED SENSOR
20170330978 · 2017-11-16 · ·

An infrared sensor forming an infrared solid-state imaging device includes a sensor element portion disposed in a package. In the sensor element portion, an absorption structure supported on a substrate is provided. The absorption structure has a structure in which a second insulating film, an absorption film, and a first insulating film are stacked on a reflective film. The first insulating film and the second insulating film are formed so as to have a film thickness with which the index of absorption of infrared radiation entering the absorption structure is maximized with consideration given to the energy loss in an optical transmission path to the absorption structure.

Photo detection element, optical sensor, and method of manufacturing photo detection element

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.

SEMICONDUCTOR DEVICE FOR DETECTING ULTRAVIOLET AND INFRARED RADIATION AND RELATED MANUFACTURING PROCESS
20170314989 · 2017-11-02 ·

A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

Photoconductive emitter device with plasmonic electrodes

A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 μm) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

Photoconductive emitter device with plasmonic electrodes

A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 μm) and produces milliwatt-range power levels in the terahertz (THz) frequency range.

DYNAMICALLY ADDRESSABLE HIGH VOLTAGE OPTICAL TRANSFORMER WITH INTEGRATED OPTICALLY TRIGGERED SWITCHES

An optical transformer includes a plurality of light emitters, a plurality of photovoltaic cells positioned to receive light from at least a first subset of the plurality of light emitters, the plurality of photovoltaic cells including at least a first photovoltaic cell and a second photovoltaic cell, and one or more optically triggered switches positioned to receive light from at least a second subset of the plurality of light emitters, the one or more optically triggered switches including at least a first optically triggered switch electrically coupled to the first photovoltaic cell and the second photovoltaic cell. A method of operating the optical transformer is also described.

Retinal prosthesis system using nanowire light detector, and manufacturing method thereof

A retinal prosthesis system can comprise: a flexible substrate; a nanowire light detector which is placed on the substrate, and comprises one or more nanowires of which the resistance changes according to the applied light; one or more micro-electrodes which are placed on the substrate, are electrically connected to the nanowire light detector, and come in contact with retinal cells; and an electric power supply source for applying electric power to the nanowire light detector and the micro-electrodes. The retinal prosthesis system can be implemented into a very thin and flexible substrate type high resolution retinal system by manufacturing a nanowire light detector on a substrate in which micro-electrodes are implemented.

Retinal prosthesis system using nanowire light detector, and manufacturing method thereof

A retinal prosthesis system can comprise: a flexible substrate; a nanowire light detector which is placed on the substrate, and comprises one or more nanowires of which the resistance changes according to the applied light; one or more micro-electrodes which are placed on the substrate, are electrically connected to the nanowire light detector, and come in contact with retinal cells; and an electric power supply source for applying electric power to the nanowire light detector and the micro-electrodes. The retinal prosthesis system can be implemented into a very thin and flexible substrate type high resolution retinal system by manufacturing a nanowire light detector on a substrate in which micro-electrodes are implemented.

GRAPHENE OPTICAL SENSOR
20230178610 · 2023-06-08 · ·

A graphene optical sensor includes a graphene layer having a surface, a first electrode and a second electrode, formed on the surface of the graphene layer, and arranged in a first direction parallel to the surface of the graphene layer, and a plurality of plasmonic antennas provided on the surface of the graphene layer between the first and second electrodes. Each plasmonic antenna of the plurality of plasmonic antennas, in a plan view, includes a first rod portion extending in a second direction inclined from the first direction, and a second rod portion extending in a third direction inclined from the first direction in a direction opposite the second direction with reference to the first direction, and intersecting the first rod portion. The plurality of the plasmonic antennas is arranged periodically in the second direction and in the third direction.

Light detector

A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, and in which a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend.