A hybrid-integrated series/parallel-connected photovoltaic diode array employs 10s-to-100s of single-wavelength III-V compound semiconductor photodiodes in an array bonded onto a transparent optical plate through which the array is illuminated by monochromatic light. The power-by-light system receiver enables high-voltage, up to 1000s of volts, optical transmission of power to remote electrical systems in harsh environments.

The present disclosure relates to a 3D formable photovoltaic solar panel, in particular to a semi-finished free-formable photovoltaic module for a 3D formed solar panel, and to a method for manufacturing thereof. The semi-finished free-formable photovoltaic module comprising: a plurality of laterally spaced back contactable flexible photovoltaic elements; a plurality of flexible electrically conductive wiring elements forming an electrically conductive interconnection between flexible photovoltaic elements, each wiring element having an overlap with the respective back terminals of adjacent flexible photovoltaic elements; and an encapsulant over layer, wherein the encapsulant cover layer essentially fixates the overlaps of the wiring elements with respect to the respective back terminals.

A heteroepitaxial semiconductor device includes a seed layer including a first semiconductor material, the seed layer including a first side, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged at the first side of the seed layer, the separation layer including an aperture, a heteroepitaxial structure grown at the first side of the seed layer at least in the aperture and including a second semiconductor material, different from the first semiconductor material, and a first dielectric material layer arranged at the second side of the seed layer and covering the lateral sides of the seed layer.

Disclosed is a method for fabricating a terahertz device, the method including providing a substrate, doping a conductive impurity on an upper surface of the substrate to form an electrode layer, patterning the electrode layer to form antenna electrodes, and forming a photomixer between the antenna electrodes.

Disclosed herein is a method, comprising: forming a radiation absorption layer comprising a layer of SiC on a semiconductor substrate; forming a first electric contacts on a first surface of the radiation absorption layer; bonding the radiation absorption layer with an electronics layer; removing the semiconductor substrate; forming a second electric contacts on a second surface of the radiation absorption layer distal from the electronics layer.

An X-ray imaging device with an X-ray conversion area on a flexible circuit such as a Thin Film Transistor circuit with an array of detector cells is manufactured in a method comprising the steps of — providing a flexible carrier layer on a substrate plate, with a first surface of the flexible carrier layer attached to the substrate plate and a second surface of the flexible carrier layer exposed, whereby the substrate plate hinders the flexible carrier layer from bending; — creating an array of detector cells on a part of the second surface; — mounting a peripheral circuit on the second surface outside said part, interconnected to the array of detector cells; — attaching a further layer to the second surface, after or before mounting the peripheral circuit, the further layer comprising an X-ray conversion area at least over the array of detector cells, the further layer being attached to the flexible carrier layer beyond a first edge of the array of detector cells, and beyond the peripheral circuit, the further layer comprising a recess or and opening to accommodate the peripheral circuit; — detaching the substrate plate from the flexible carrier layer before the end of manufacturing the X-ray imaging device.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AIN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

A source wafer for use in a micro-transfer printing process. The source wafer comprising: a wafer substrate; a photonic component, provided in a device coupon, the device coupon being attached to the wafer substrate via a release layer; and one or more etch stop layers, located between the photonic component and the wafer substrate.

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.