A solar cell includes: a crystalline semiconductor substrate of a first conductivity type; a first semiconductor layer provided on a first region on one principal surface of the substrate; a second semiconductor layer provided on a second region on the one principal surface different from the first region; a first transparent electrode layer provided on the first semiconductor layer; and a second transparent electrode layer provided on the second semiconductor layer. The first semiconductor layer includes a first amorphous semiconductor layer of the first conductivity type and a first crystalline semiconductor part extending from the one principal surface toward the first transparent electrode layer. The second semiconductor layer includes a second amorphous semiconductor layer of a second conductivity type different from the first conductivity type.

A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.

Disclosed are embodiments of a thin-film photovoltaic technology including a single-junction crystalline silicon solar cell with a photonic-plasmonic back-reflector structure for lightweight, flexible energy conversion applications. The back-reflector enables high absorption for long-wavelength and near-infrared photons via diffraction and light-concentration, implemented by periodic texturing of the bottom-contact layer by nanoimprint lithography. The thin-film crystalline silicon solar cell is implemented in a heterojunction design with amorphous silicon, where plasma enhanced chemical vapor deposition (PECVD) is used for all device layers, including a low-temperature crystalline silicon deposition step. Excimer laser crystallization is used to integrate crystalline and amorphous silicon within a monolithic process, where a thin layer of amorphous silicon is converted to a crystalline silicon seed layer prior to deposition of a crystalline silicon absorber layer via PECVD. The crystalline nature of the absorber layer and the back-reflector enable efficiencies higher than what is achievable in other thin-film silicon devices.

A photovoltaic device includes: a p- or n-type semiconductor substrate; a p-type amorphous semiconductor film and an n-type amorphous semiconductor film on a first-face side; p-electrodes on the p-type amorphous semiconductor film; and n-electrodes on the n-type amorphous semiconductor film, wherein: the p-electrodes and the n-electrodes are arranged at intervals; the p-type amorphous semiconductor film surrounds the n-type amorphous semiconductor film in an in-plane direction of the semiconductor substrate; the n-type amorphous semiconductor film has an edge portion providing an overlapping region where the n-type amorphous semiconductor film overlaps the p-type amorphous semiconductor film; and the n-electrodes are disposed in areas of the n-type amorphous semiconductor film that are surrounded by the overlapping region.

A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.

An optoelectronic integrated substrate, a preparation method thereof and an optoelectronic integrated circuit. The electronic integrated substrate includes a base substrate and an electronic device and a photo-diode disposed on the base substrate, wherein the photo-diode includes an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to the plane of the base substrate and are connected.

The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very-high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron (γ,X) beam irradiation and suitable thermal treatment and is industrially easily available.

Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH.sub.2), disilane (Si.sub.2H.sub.6), and dichlorosilane (SiCl.sub.2H.sub.2).