A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate; c) arranging an active light-emitting diode stack on a third substrate; and d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate.

Visible spectrum quantum dot (QD) light emitting sources integrable with integrated silicon photonics include a plurality of epitaxially grown InP QDs within an active region. The light emitting sources include light emitting diodes (LEDs) and semiconductor lasers.

To provide a bonding-type semiconductor light-emitting device which has excellent reliabilities with smaller time deviations of the light output power and the forward voltage. A semiconductor light-emitting device 100 according to the present disclosure includes a conductive support substrate 80; a metal layer 60 containing a reflective metal provided on the conductive support substrate 10; a semiconductor laminate 30 formed from a stack of a plurality of InGaAsP group III-V compound semiconductor layers containing at least In and P provided on the reflective metal layer 60; an n-type InGaAs contact layer 20A provided on the semiconductor laminate 30; and an n-side electrode 93 provided on the n-type InGaAs contact layer 20A, wherein the center emission wavelength of light emitted from the semiconductor laminate 30 is 1000 to 2200 nm.

A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.

Provided is a method of producing a semiconductor optical device that makes it possible to improve the optical device properties of the semiconductor optical device including semiconductor layers containing at least In, As, and Sb. The method has a first step of forming an etching stop layer on an InAs growth substrate; a second step of forming a semiconductor laminate; a third step of forming a distribution portion; a fourth step of bonding the semiconductor laminate and the distribution portion to a support substrate with a metal bonding layer therebetween; and a fifth step of removing the InAs growth substrate.

A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

Semiconductor structures involving multiple quantum wells provide increased efficiency of UV and visible light emitting diodes (LEDs) and other emitter devices, particularly at high driving current. LEDs made with the new designs have reduced efficiency droop under high current injection and increased overall external quantum efficiency. The active region of the devices includes separation layers configured between the well layers, the one or more separation regions being configured to have a first mode to act as one or more barrier regions separating a plurality of carriers in a quantum confined mode in each of the quantum wells being provided on each side of the one or more separation layers and a second mode to cause spreading of the plurality of carriers across each of the quantum wells to increase an overlap integral of all of the plurality of carriers. The devices and methods of the invention provide improved efficiency for solid state lighting, including high efficiency ultraviolet LEDs.

A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.

A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa.