A heat dissipation structure of an electric component that generates heat includes: a heat dissipator provided along a surface of the electric component; a liquid metal interposed between the electric component and the heat dissipator; and a fencing body interposed between the electric component and the heat dissipator in a crushed state and surrounding the liquid metal.

Embodiments of the present invention describe a semiconductor package having an embedded die. The semiconductor package comprises a coreless substrate that contains the embedded die. The semiconductor package provides die stacking or package stacking capabilities. Furthermore, embodiments of the present invention describe a method of fabricating the semiconductor package that minimizes assembly costs.

A method is disclosed for manufacturing a semiconductor device including a mounting substrate, a semiconductor chip, a rear-surface metal layer, an AuSn solder layer, and a solder blocking metal layer, is disclosed. The semiconductor chip is mounted on the mounting substrate, and includes front and rear surfaces, and a heat generating element. The rear-surface metal layer includes gold (Au). The AuSn solder layer is located between the mounting substrate and the rear surface to fix the semiconductor chip to the mounting substrate. The solder blocking metal layer is located between the rear surface and the mounting substrate, and in a non-heating region excluding a heating region in which the heat generating element is formed. The solder blocking metal layer includes at least one of NiCr, Ni and Ti and extends to an edge of the semiconductor chip. A void is provided between the solder blocking metal layer and the AuSn solder layer.

An object of the present invention is to provide an underfill composition having excellent temporal stability and good metal adhesiveness, a coating film formed of the underfill composition, a cured film, a multilayer interconnection board, and a manufacturing method of a multilayer interconnection board. The underfill composition of the present invention is an underfill composition containing a polymer and a maleimide compound having a maleimide group, in which the polymer has a cyano group, and a content of the cyano group included in 1 g of the polymer is 0.1 to 6 mmol/g.

A semiconductor device including a mounting substrate, a semiconductor chip, a rear-surface metal layer, an AuSn solder layer, and a solder blocking metal layer, is disclosed. The semiconductor chip is mounted on the mounting substrate, and includes front and rear surfaces, and a heat generating element. The rear-surface metal layer includes gold (Au). The AuSn solder layer is located between the mounting substrate and the rear surface to fix the semiconductor chip to the mounting substrate. The solder blocking metal layer is located between the rear surface and the mounting substrate, and in a non-heating region excluding a heating region in which the heat generating element is formed. The solder blocking metal layer includes at least one of NiCr, Ni and Ti and extends to an edge of the semiconductor chip. A void is provided between the solder blocking metal layer and the AuSn solder layer.

An electrical binding structure is provided, which includes a substrate, a contact pad set, and a combination of a micro device and an electrode. The contact pad set is on the substrate in which the contact pad set includes at least one contact pad, and the at least one contact pad is conductive. The combination is on the contact pad set. Opposite sides of the electrode are respectively in contact with the micro device and the contact pad set in which at least the contact pad set and the electrode define at least one volume space. A vertical projection of the at least one volume space on the substrate is overlapped with a vertical projection of one of the contact pad set and the electrode on the substrate, and is enclosed by a vertical projection of an outer periphery of the micro device on the substrate.

A sensor package structure includes a substrate, a sensor chip disposed on the substrate, a plurality of metal wires electrically connecting the substrate and the sensor chip, a glass cover disposed on the sensor chip, and an adhesive layer connecting the glass cover to the substrate. The substrate is made of a material having a coefficient of thermal expansion (CTE) that is less than 10 ppm/ C. The glass cover includes a board body and an annular supporting body connected to the board body. The annular supporting body of the glass cover is fixed onto the substrate through the adhesive layer, so that the glass cover and the substrate jointly surround an enclosed accommodating space. The sensor chip and the metal wires are arranged in the accommodating space, and the sensing region of the sensor chip faces the light-permeable portion of the board body.

An electrical binding structure is provided, which includes a substrate, a contact pad set, and a combination of a micro device and an electrode. The contact pad set is on the substrate in which the contact pad set includes at least one contact pad, and the at least one contact pad is conductive. The combination is on the contact pad set. Opposite sides of the electrode are respectively in contact with the micro device and the contact pad set in which at least the contact pad set and the electrode define at least one volume space. A vertical projection of the at least one volume space on the substrate is overlapped with a vertical projection of one of the contact pad set and the electrode on the substrate, and is enclosed by a vertical projection of an outer periphery of the micro device on the substrate.

The present disclosure relates to power modules. The teachings thereof may be embodied in a power unit and/or a drive unit for driving the power unit, along with methods for producing a power module. For example, a power module may include: a power unit including a heat sink; a power device disposed on the heat sink; an insulating layer covering the heat sink and the power device; and a drive unit for driving the power unit, the drive unit comprising a contact element corresponding to the contact area of the power unit. An underside of the power unit is defined by an underside of the heat sink. A top side of the power unit is defined by a contact area thermally and/or electrically coupled to the power device and a surface of the insulating layer surrounding the contact area. The contact element may be disposed abutting the contact area of the power unit for making electrical and/or thermal contact with the power device.

The present disclosure relates to power modules. The teachings thereof may be embodied in a power unit and/or a drive unit for driving the power unit, along with methods for producing a power module. For example, a power module may include: a power unit including a heat sink; a power device disposed on the heat sink; an insulating layer covering the heat sink and the power device; and a drive unit for driving the power unit, the drive unit comprising a contact element corresponding to the contact area of the power unit. An underside of the power unit is defined by an underside of the heat sink. A top side of the power unit is defined by a contact area thermally and/or electrically coupled to the power device and a surface of the insulating layer surrounding the contact area. The contact element may be disposed abutting the contact area of the power unit for making electrical and/or thermal contact with the power device.