A sensor package structure includes a substrate, a sensor chip disposed on the substrate, a plurality of metal wires electrically connecting the substrate and the sensor chip, a glass cover disposed on the sensor chip, and an adhesive layer connecting the glass cover to the substrate. The substrate is made of a material having a coefficient of thermal expansion (CTE) that is less than 10 ppm/ C. The glass cover includes a board body and an annular supporting body connected to the board body. The annular supporting body of the glass cover is fixed onto the substrate through the adhesive layer, so that the glass cover and the substrate jointly surround an enclosed accommodating space. The sensor chip and the metal wires are arranged in the accommodating space, and the sensing region of the sensor chip faces the light-permeable portion of the board body.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor device comprising a mounting substrate, a semiconductor chip, a rear-surface metal layer, an AuSn solder layer, and a solder blocking metal layer, is disclosed. The semiconductor chip is mounted on the mounting substrate, and includes front and rear surfaces, and a heat generating element. The rear-surface metal layer includes gold (Au). The AuSn solder layer is located between the mounting substrate and the rear surface to fix the semiconductor chip to the mounting substrate. The solder blocking metal layer is located between the rear surface and the mounting substrate, and in a non-heating region excluding a heating region in which the heat generating element is formed. The solder blocking metal layer includes at least one of NiCr, Ni and Ti and extends to an edge of the semiconductor chip. A void is provided between the solder blocking metal layer and the AuSn solder layer.

A semiconductor device has a first board (10) having a first electrically conducting layer (11) and a first electronic element (12) that is provided on the first electrically conducting layer (11); and an intermediate layer (20) being provided on the first board (10), and having a plurality of connectors and a resin board section, in which the plurality of connectors are fixed. The connector is exposed from the resin board section on the first board (10) side, and connected with the first electrically conducting layer (11) or the first electronic element (12).

A heat dissipation structure of an electric component that generates heat includes: a heat dissipator provided along a surface of the electric component; a liquid metal interposed between the electric component and the heat dissipator; and a fencing body interposed between the electric component and the heat dissipator in a crushed state and surrounding the liquid metal.

Implementations of a sintering film frame may include a frame including an outer perimeter and an inner perimeter, the inner perimeter defining an opening through the frame; a position detection opening through the frame; at least two alignment holes through the frame; and a frame identifier on a side of the frame.

A semiconductor device has a first board (10) having a first electrically conducting layer (11) and a first electronic element (12) that is provided on the first electrically conducting layer (11); and an intermediate layer (20) being provided on the first board (10), and having a plurality of connectors and a resin board section, in which the plurality of connectors are fixed. The connector is exposed from the resin board section on the first board (10) side, and connected with the first electrically conducting layer (11) or the first electronic element (12).

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.