A semiconductor device includes a first chip pad, a power semiconductor chip arranged on the first chip pad and including at least a first and a second power electrode, and a clip connected to the first power electrode. In this case, an integral part of the clip forms a shunt resistor and a first contact finger of the shunt resistor is embodied integrally with the clip.

A semiconductor device comprises a first chip pad, a power semiconductor chip arranged on the first chip pad and comprising at least a first and a second power electrode, and a clip connected to the first power electrode. In this case, an integral part of the clip forms a shunt resistor and a first contact finger of the shunt resistor is embodied integrally with the clip.

Disclosed is a power module with built-in power device and double-sided heat dissipation and a manufacturing method thereof. The power module includes a first base plate including a first organic insulating base material, a first electrical insulating heat dissipation body, a first metal layer, and a patterned second metal layer; a second base plate including a second organic insulating base material and a second electrical insulating heat dissipation body. A third metal layer thermally connected to a side of the second electrical insulating heat dissipation body is formed at the outer side of the second base plate. A fourth metal layer thermally connected to the second electrical insulating heat dissipation body is formed at another side of the second electrical insulating heat dissipation body. The fourth metal layer is formed with a concave power device accommodating space, and the power device is arranged in the accommodating space.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

An electronic heat-dissipating substrate including: lead frames of wiring pattern shapes on a conductor plate; and an insulating member between the lead frames. A plate surface of the lead frames and a top surface of the insulating member form one continuous surface. The part arrangement surface is on both surfaces of the electronic part mounting heat-dissipating substrate, a reductant circuit which includes at least similar dual-system circuit is formed on the electronic part mounting heat-dissipating substrate, a first-system circuit of the dual-system circuit is formed on a first surface of the electronic part mounting heat-dissipating substrate, a second-system circuit of the dual-system circuit is formed on a second surface of the electronic part mounting heat-dissipating substrate, and the common lead frames used in a portion of a circuit wiring are used to the first surface and the second surface of the electronic part mounting heat-dissipating substrate.

An electronic heat-dissipating substrate including: lead frames of wiring pattern shapes on a conductor plate; and an insulating member between the lead frames. A plate surface of the lead frames and a top surface of the insulating member form one continuous surface. The part arrangement surface is on both surfaces of the electronic part mounting heat-dissipating substrate, a reductant circuit which includes at least similar dual-system circuit is formed on the electronic part mounting heat-dissipating substrate, a first-system circuit of the dual-system circuit is formed on a first surface of the electronic part mounting heat-dissipating substrate, a second-system circuit of the dual-system circuit is formed on a second surface of the electronic part mounting heat-dissipating substrate, and the common lead frames used in a portion of a circuit wiring are used to the first surface and the second surface of the electronic part mounting heat-dissipating substrate.

A power module is fabricated, employing a clad metal that is formed by pressure-laminating aluminum and copper, in such a manner that the aluminum layer of the clad metal is bonded such as by ultrasonic bonding to the surface electrode of the power semiconductor chip and a wire is bonded to the copper layer thereof to establish electrical circuit. The clad metal is thermally treated in advance at a temperature higher than the operating temperature of the power semiconductor chip to sufficiently form intermetallic compounds at the interface between the aluminum layer and the copper layer for the intermetallic compounds so as not to grow in thickness after the bonding processes.

A power module is fabricated, employing a clad metal that is formed by pressure-laminating aluminum and copper, in such a manner that the aluminum layer of the clad metal is bonded such as by ultrasonic bonding to the surface electrode of the power semiconductor chip and a wire is bonded to the copper layer thereof to establish electrical circuit. The clad metal is thermally treated in advance at a temperature higher than the operating temperature of the power semiconductor chip to sufficiently form intermetallic compounds at the interface between the aluminum layer and the copper layer for the intermetallic compounds so as not to grow in thickness after the bonding processes.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.