The disclosure relates to the field of electronic elements, and discloses an Insulated Gate Bipolar Transistor (IGBT) module assembly which comprises a cooling plate and an IGBT module fixedly connected to the cooling plate, wiring terminals are arranged at an end face of the IGBT module, which is away from the cooling plate, the IGBT module comprises a side face adjacent to the end face, and the side face and the cooling plate form a water guiding groove. In the disclosure, the side face and the cooling plate form the water guiding groove, and a great amount of condensed water collected on the cooling plate can be guided to flow out through the water guiding groove instead of flowing to the end face of the IGBT module, on which the wiring terminals are arranged.

A light emitting device disclosed in an embodiment includes: a light emitting chip including a light emitting part, including a plurality of semiconductor layers, and a first electrode and a second electrode under the light emitting part; a first support member under the light emitting chip; a second support member under the first support member; a first lead electrode connected to the first electrode and a second lead electrode connected to the second electrode, in the second support member, the first lead electrode being separated from the second lead electrode; a protection chip disposed between the first and second lead electrodes; and a reflective member disposed on a periphery of the light emitting chip, wherein the first support member includes a ceramic material between the second support member and the light emitting chip.

A flange tab system includes a first member having a first-member-first-portion and a first-member-second-portion, a second member having a second-member-first portion and a second-member-second-portion, a third member, and a ring-like member. The flange tab system provides an electrical fitting for electrical current flow between pipelines or other structures. The flange tab system is configured to secure a wire to a pipeline for cathodic protection and various other applications.

A lead frame is disclosed. In an embodiment, the lead frame includes a frame having a plurality of lead frame sections, wherein the lead frame sections are connected to the frame, wherein the frame has at least two longitudinal sides and at least two transverse sides, wherein at least in one longitudinal side includes an imprint, and wherein the imprint bolsters stability of the longitudinal side against sagging.

A method of producing an optoelectronic component including a conversion element includes: A) providing a layer sequence having an active layer, wherein the active layer is configured to emit electromagnetic primary radiation; B) providing quantum dots, wherein the quantum dots are functionalized with an organic group and/or the quantum dots dissolved or dispersed in a first solvent and/or are present as a powder; C*) providing a mixture including a precursor of an inorganic matrix material and of a second solvent; D) mixing the mixture obtained in step C*) with the quantum dots of step B); E) drying the mixture; and F) sintering the mixture to form the conversion element.

The present technology relates to a solid state imaging device that enables a reduction in the manufacturing cost of the solid state imaging device, and an electronic apparatus. A first substrate including a pixel circuit having a pixel array unit and a second substrate including a first and a second signal processing circuit arranged side by side across a scribe area are stacked. The second substrate includes a first moisture-resistant ring surrounding at least part of a periphery of the first signal processing circuit, a second moisture-resistant ring surrounding at least part of a periphery of the second signal processing circuit, a third moisture-resistant ring surrounding at least part of a periphery of the second substrate in a layer different from the first and second moisture-resistant rings, and a barrier unit separating a first area between the first and second moisture-resistant rings and a second area. The present technology can be applied to, for example, a solid state imaging device such as a CMOS image sensor.

The present technology relates to a solid state imaging device that enables a reduction in the manufacturing cost of the solid state imaging device, and an electronic apparatus. A first substrate including a pixel circuit having a pixel array unit and a second substrate including a first and a second signal processing circuit arranged side by side across a scribe area are stacked. The second substrate includes a first moisture-resistant ring surrounding at least part of a periphery of the first signal processing circuit, a second moisture-resistant ring surrounding at least part of a periphery of the second signal processing circuit, a third moisture-resistant ring surrounding at least part of a periphery of the second substrate in a layer different from the first and second moisture-resistant rings, and a barrier unit separating a first area between the first and second moisture-resistant rings and a second area. The present technology can be applied to, for example, a solid state imaging device such as a CMOS image sensor.

An optical sensor includes a flexible substrate, a light emitting element, and a light receiving element. The light emitting element and the light receiving element are mounted on element mounting portions and connected to element connection portions by wires. The optical sensor also includes through wirings extending through the substrate. Each through wiring is bonded to the element mounting portion or the element connection portion. The through wirings include a heat radiation through wiring that is located immediately below the light emitting element and bonded to the element mounting portion on which the light emitting element is mounted. The optical sensor further includes light shielding materials and encapsulation resins for surrounding and encapsulating the light emitting element and the light receiving element, respectively.

Provided is a method of processing a NAND flash memory device including at least one NAND flash memory and a memory controller configured to control the at least one NAND flash memory. The method includes etching a portion of a first substrate of the NAND flash memory device to expose a wire connecting the at least one NAND flash memory and the memory controller to each other, dividing the wire into a first wire and a second wire by etching a first area of the etched first substrate, and connecting, to a second substrate, the first wire to which the at least one NAND flash memory is connected.

A method of producing an optoelectronic component including a conversion element includes: A) providing a layer sequence having an active layer, wherein the active layer is configured to emit electromagnetic primary radiation; B) providing quantum dots, wherein the quantum dots are functionalized with an organic group and/or the quantum dots dissolved or dispersed in a first solvent and/or are present as a powder; C*) providing a mixture including a precursor of an inorganic matrix material and of a second solvent; D) mixing the mixture obtained in step C*) with the quantum dots of step B); E) drying the mixture; and F) sintering the mixture to form the conversion element.