A method comprises the steps of providing a wafer; applying a redistribution layer, grinding a back side of the wafer; depositing a metal layer; and applying a singulation process. A semiconductor package comprises a metal-oxide-semiconductor field-effect transistor (MOSFET), a redistribution layer, and a metal layer. The MOSFET comprises a source electrode, a gate electrode, a drain electrode and a plurality of partial drain plugs. The source electrode, the gate electrode, and the drain electrode are positioned at a front side of the MOSFET.

A method comprises the steps of providing a wafer; applying a redistribution layer, grinding a back side of the wafer; depositing a metal layer; and applying a singulation process. A semiconductor package comprises a metal-oxide-semiconductor field-effect transistor (MOSFET), a redistribution layer, and a metal layer. The MOSFET comprises a source electrode, a gate electrode, a drain electrode and a plurality of partial drain plugs. The source electrode, the gate electrode, and the drain electrode are positioned at a front side of the MOSFET.

A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to a part of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.

A system in package includes a memory-die stack in memory module that is stacked vertically with respect to a processor die. Each memory die in the memory-die stack includes a vertical bond wire that emerges from a matrix for connection. Some configurations include the vertical bond wire emerging orthogonally beginning from a bond-wire pad. The matrix encloses the memory-die stack, the spacer, and at least a portion of the processor die.

A system in package includes a memory-die stack in memory module that is stacked vertically with respect to a processor die. Each memory die in the memory-die stack includes a vertical bond wire that emerges from a matrix for connection. Some configurations include the vertical bond wire emerging orthogonally beginning from a bond-wire pad. The matrix encloses the memory-die stack, the spacer, and at least a portion of the processor die.

A method of repairing a display panel and a repaired display panel are provided. The display panel includes a panel substrate, a plurality of micro LEDs arranged on the panel substrate, and a molding member covering the plurality of micro LEDs. The molding member includes a first molding member and a second molding member disposed in a region surrounded by the first molding member. The second molding member has a composition or a shape different from that of the first molding member, and the second molding member surrounds at least one side surface of the plurality of micro LEDs.

A method of repairing a display panel and a repaired display panel are provided. The display panel includes a panel substrate, a plurality of micro LEDs arranged on the panel substrate, and a molding member covering the plurality of micro LEDs. The molding member includes a first molding member and a second molding member disposed in a region surrounded by the first molding member. The second molding member has a composition or a shape different from that of the first molding member, and the second molding member surrounds at least one side surface of the plurality of micro LEDs.