A three-dimensional interconnect structure having a top surface, a first coaxial conductor, and a shielded chamber is disclosed. The first coaxial conductor is filled with a solid dielectric medium. The first coaxial conductor has a segment that runs parallel to the top surface and a segment connects the first coaxial conductor to the top surface. Conductive pads on the top surface are adapted to receive a signal and couple that signal to the first coaxial conductor at the top surface. The shielded chamber contains a device connecting two conductors that are part of the three-dimensional interconnect structure to one another in that chamber. The shielded chamber is filled with the solid dielectric medium. The structure is a solid block composed of a mixture of metal structures interspersed with the solid dielectric medium.

RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

In one example, a semiconductor device, comprises a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.

Embodiments of the disclosure relate to methods for forming a flat surface MIO structure for bonding and cooling electronic assemblies. In one embodiment, the method includes providing a plurality of particles on a surface of a base substrate. A metal is then deposited onto the plurality of particles up to a desired level to form a metal layer such that the plurality of particles is partially covered by the metal layer. An adhesive member is then applied to the plurality of particles exposed above the metal layer. Finally the adhesive member is pulled to remove individual particles of the plurality of particles that are exposed above the metal layer.

A method includes positioning an integrated circuit package in a coining apparatus having a fixture and a pressing plate. The integrated circuit package includes a substrate, an integrated circuit device disposed on a top surface of the substrate, and a plurality of solder balls disposed on a bottom surface of the integrated circuit package. The fixture includes a support structure and a cavity. The cavity receives the integrated circuit device while the support structure supports portions of a top surface of the integrated circuit package. The pressing plate is pressed against two or more of the solder balls, coining the two or more solder balls until each solder ball has a desired coined surface profile.

A semiconductor device includes a first substrate, a second substrate spaced apart from the first substrate in a first direction, a first metal layer on the first substrate, a second metal layer on the first substrate and spaced apart from the first metal layer in a second direction, a first semiconductor element, and a second semiconductor element. The second substrate includes a main wiring and a signal wiring. The first semiconductor element includes a first electrode on the first metal layer, a second electrode connected to the main wiring, and a first gate electrode connected to the signal wiring. The second semiconductor element includes a third electrode on the second metal layer, a fourth electrode connected to the main wiring, and a second gate electrode connected to the signal wiring. During operation, current flows in wiring layers of the main wiring in opposite directions.

A frame is made of a first material. An external terminal electrode is attached to the frame. A heat sink plate supports the frame and includes a mounting region in the frame. The heat sink plate is made of a non-composite material containing copper with purity of 95.0 weight percentage or more. A first adhesive layer bonds the frame and the heat sink plate to each other. The first adhesive layer is made of a second material different from the first material, and has a first composition. A power semiconductor element is mounted on the mounting region of the heat sink plate. A cover is attached to the frame to constitute a sealing space sealing the power semiconductor element without gross leak. A second adhesive layer bonds the frame and the cover to each other, and has a second composition different from the first composition of the first adhesive layer.

A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.

An electronic device is mountable on a substrate. The substrate includes a first layer and a second layer located on a lower surface of the first layer. The first layer includes a plurality of first through-cavities. The second layer includes at least one second through-cavity overlapping the plurality of first through-cavities in a plan view. The plurality of first through-cavities are continuous with the at least one second through-cavity.

In one example, a semiconductor device, includes a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.