Patent classifications
H01L2924/161
Die with integrated microphone device using through-silicon vias (TSVs)
Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.
Structure and formation method of chip package with protective lid
A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.
Package, and method for manufacturing power semiconductor module
A first frame is supported by a heat sink plate, surrounds an unmounted region of the heat sink plate, contains a resin, and has a first surface. A second frame contains a resin, and has a second surface opposing the first surface. An external terminal electrode passes between the first surface and the second surface. An adhesive layer contains a resin, and includes a lower portion, an upper portion, and an intermediate portion. The lower portion connects the external terminal electrode and the first surface to each other. The upper portion connects the external terminal electrode and the second surface to each other. The intermediate portion is disposed within a through hole of the external terminal electrode, and connects the lower portion and the upper portion to each other.
SEMICONDUCTOR PACKAGES
A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.
Semiconductor device including a thermal material
In one example, a semiconductor device includes a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.
PACKAGE STRUCTURE WITH PROTECTIVE LID
A package structure is provided. The package structure includes a chip-containing structure over a substrate and a first adhesive element directly above the chip-containing structure. The first adhesive element has a first thermal conductivity. The package structure also includes multiple second adhesive elements directly above the chip-containing structure. The second adhesive elements are spaced apart from each other, each of the second adhesive elements has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The package structure further includes a protective lid attached to the chip-containing structure through the first adhesive element and the second adhesive elements. The protective lid extends across opposite sidewalls of the chip-containing structure.
PHYSICAL QUANTITY SENSOR, COMPLEX SENSOR, INERTIAL MEASUREMENT UNIT, PORTABLE ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND VEHICLE
A physical quantity sensor includes a sensor element (acceleration sensor element) and a substrate (package) to which the sensor element is attached using a bonding material (resin adhesive), in which, when an elastic modulus of the bonding material is e, 2.0 GPa<e<7.8 GPa is satisfied.
IMAGE SENSOR PACKAGE AND IMAGING APPARATUS
An image sensor package according to an embodiment of the present technology includes: a solid-state image sensor; a transparent substrate; and a package substrate. The solid-state image sensor has a light-receiving surface including a light-reception unit and a first terminal unit, and a rear surface opposite to the light-receiving surface. The transparent substrate faces the light-receiving surface. The package substrate includes a frame portion, a second terminal unit, and a supporting body. The frame portion has a joint surface to be joined to the transparent substrate and includes a housing portion housing the solid-state image sensor. The second terminal unit is to be wire-bonded to the first terminal unit, the second terminal unit being provided in the frame portion. The supporting body is provided in a peripheral portion of the light-receiving surface or at a center portion of the rear surface and partially supports the light-receiving surface or the rear surface.
Backside spacer structures for improved thermal performance
Methods for reducing the junction temperature between an IC chip and its lid by including metal spacers in the TIM layer and the resulting devices are disclosed. Embodiments include providing a substrate, including integrated circuit devices, having front and back sides; forming vertical spacers on the backside of the substrate; providing a plate parallel to and spaced from the backside of the substrate; and forming a TIM layer, surrounding the vertical spacers, between the backside of the substrate and the plate.
Radio frequency (RF) devices
A packaged RF device is provided that utilizes flexible circuit leads. The RF device includes at least one integrated circuit (IC) die configured to implement the RF device. The IC die is contained inside a package. In accordance with the embodiments described herein, a flexible circuit is implemented as a lead. Specifically, the flexible circuit lead is coupled to the at least one IC die inside the package and extends to outside the package, the flexible circuit lead thus providing an electrical connection to the at least one IC die inside the package.