A novel ferroelectric ink comprising multiphase Barium Strontium Titanate (BST) in a polymer composite is described. The ink can be employed using direct-ink writing techniques to print high dielectric constant, low loss, and electrostatically-tunable dielectrics on substrates. The substrates can be flexible such as plastics or rigid, such as substrates comprising semiconductor materials or ceramics and the like. The dielectric ink is made by suspending pre-sintered nano/submicron-sized particles of BST in a thermoplastic polymer with a solvent. After printing with the ink, a low temperature curing process is performed at temperatures below 200 C., a temperature too low to sinter BST. Fully printed devices, such as a varactor and a phase shifter using direct ink writing methodologies are described.

A TFT substrate includes a dielectric substrate, a plurality of antenna element regions provided on the dielectric substrate, each antenna element region including a TFT and a patch electrode electrically connected to a drain electrode of the TFT, and a flattening layer provided on the dielectric substrate, located above a layer including the patch electrode, and formed of a resin.

A phase shift device includes a planar transmission line that is formed by a signal electrode and a ground electrode which are separated by a dielectric substance, whereby the signal electrode of the planar transmission line is divided into several pieces and includes overlapping areas of adjacent pieces that are filled with a tunable liquid crystal material, thereby forming a dielectric tunable component (varactor) with a metal-insulator-metal type capacitor. The several pieces of the signal electrode are arranged at two or more different distance levels with respect to the ground electrode. The tunable liquid crystal material is arranged as a continuous layer between several pieces of the signal electrode that are arranged at two different distance levels.

A ferroelectric film phase shifter includes a substrate layer; an isolated signal layer located on the substrate layer; first, second and third top transmission line electrodes distributed on the isolated signal layer at intervals; the first and second top transmission line electrodes located at both ends of the isolated signal layer, and the third top transmission line electrode located on a middle region of the isolated signal layer; a bottom transmission line electrode located in the isolated signal layer; an intermediate transmission line structure located in a middle region of the bottom transmission line electrode and adjacent to the third top transmission line electrode; MIM hafnium oxide-based ferroelectric capacitor structures located at two ends of the bottom transmission line electrode; and metal transmission line structures located between each MIM hafnium oxide-based ferroelectric capacitor structure and each of the first top transmission line electrode and the second top transmission line electrode.

A phase-shift unit includes: a first substrate and a second substrate provided opposite to each other; a medium layer provided between the first substrate and the second substrate; a microstrip line disposed at a side of the second substrate facing towards the first substrate; and a grounding layer provided at a side of the first substrate facing towards the second substrate and formed with a via hole; wherein a projection of the via hole onto the second substrate and a projection of the microstrip line onto the second substrate have an overlapped area therebetween; and wherein the via hole is configured to feed a phase-shifted microwave signal out of the phase-shift unit, or feed a microwave signal into the phase-shift unit such that the microwave signal is phase-shifted.

A non-reciprocal mode converting SIW includes a first straight SIW section, a second straight SIW section, and a curved SIW section coupling the first straight SIW section to the second straight SIW section. The curved SIW section included magnetic biasing at opposed corner regions. The magnetic biasing and a curvature of the curved SIW section causes: (i) a wave in a first transverse electric (TE) mode that propagates in a forward direction from the first straight section through the curved SIW section into the second straight SIW section to convert to a second TE mode, and (ii) a wave in the first TE mode that propagates in a reverse direction from the second straight SIW section through the curved SIW section into the first straight SIW section to maintain the first TE mode.

A non-reciprocal mode converting SIW includes a first straight SIW section, a second straight SIW section, and a curved SIW section coupling the first straight SIW section to the second straight SIW section. The curved SIW section included magnetic biasing at opposed corner regions. The magnetic biasing and a curvature of the curved SIW section causes: (i) a wave in a first transverse electric (TE) mode that propagates in a forward direction from the first straight section through the curved SIW section into the second straight SIW section to convert to a second TE mode, and (ii) a wave in the first TE mode that propagates in a reverse direction from the second straight SIW section through the curved SIW section into the first straight SIW section to maintain the first TE mode.

A phase shift device includes a planar transmission line that is formed by a signal electrode and a ground electrode which are separated by a dielectric substance, whereby the signal electrode of the planar transmission line is divided into several pieces and includes overlapping areas of adjacent pieces that are filled with a tunable liquid crystal material, thereby forming a dielectric tunable component (varactor) with a metal-insulator-metal type capacitor. The several pieces of the signal electrode are arranged at two or more different distance levels with respect to the ground electrode. The tunable liquid crystal material is arranged as a continuous layer between several pieces of the signal electrode that are arranged at two different distance levels.

A substrate module, a display apparatus, and a liquid crystal antenna are provided in the present disclosure. The substrate module includes a first substrate. The first substrate includes a first sub-region and a second sub-region; the second sub-region includes a binding region; and the binding region includes first pins. The first sub-region includes first loads, and a first sub-pin is electrically connected to the first load. The second sub-region includes at least one second load, and a second sub-pin is electrically connected to the second load. The second load includes a capacitor including a first capacitor. The first substrate includes a first base substrate, a first electrode layer, a first insulating layer and a second electrode layer. Along a direction perpendicular to a plane of the base substrate, an overlapping portion of a first electrode portion and a second electrode portion forms the first capacitor.

A phase shifter and an electronic device are provided and belong to the field of communication technology. The phase shifter includes opposite first and second substrates; a tunable dielectric layer therebetween. The first substrate includes a first dielectric substrate; first and second transmission lines on a side of the first dielectric substrate close to the tunable dielectric layer; the first transmission line includes a first main line and at least one first branch connected to a side of an extending direction thereof; the second transmission line includes a second main line and at least one second branch connected to a side of an extending direction thereof; the first and second main lines are arranged side by side with a first gap therebetween. The second substrate includes a second dielectric substrate and a first electrode layer on a side of the second dielectric substrate close to the tunable dielectric layer.