A line narrowing device includes a first prism; first and second gratings arranged on the optical path of the light beam having passed through the first prism at positions different in a direction of grooves of either the first grating or the second grating; a beam adjustment optical system arranged on the optical path of the light beam between the first prism and at least one grating of the first and second gratings, and causing a first portion of the light beam to be incident on the first grating and causing a second portion of the light beam to be incident on the second grating; a first actuator adjusting an incident angle of the first portion on the first grating; a second actuator adjusting an incident angle of the second portion on the second grating; and a third actuator adjusting an energy ratio of the first and second portions.

A line narrowing device includes a first prism; first and second gratings arranged on the optical path of the light beam having passed through the first prism at positions different in a direction of grooves of either the first grating or the second grating; a beam adjustment optical system arranged on the optical path of the light beam between the first prism and at least one grating of the first and second gratings, and causing a first portion of the light beam to be incident on the first grating and causing a second portion of the light beam to be incident on the second grating; a first actuator adjusting an incident angle of the first portion on the first grating; a second actuator adjusting an incident angle of the second portion on the second grating; and a third actuator adjusting an energy ratio of the first and second portions.

An optical instrument for determining a wavelength of light generated by a light source. The optical instrument may include a signal generator for generating a driving signal, a tunable optical filter device configured to receive the driving signal, the tunable optical filter device configured to diffract the light generated by the light source based on the driving signal, an optical detector device configured to detect a timing of maximum diffraction of light diffracted by the tunable optical filter device, and an analyzer configured to determine the wavelength of the light based the timing of maximum diffraction.

A Lidar system includes a tunable laser configured to generate an output light signal and a photodiode array for receiving light from the tunable laser reflected from a target object. The tunable laser includes a feedback loop including a Mach-Zender interferometer, MZI, receiving the output light signal from the tunable laser, in which the MZI includes two optical paths receiving the output light signal. A phase shifter is provided in one optical path that is operable to produce a pre-determined shift in the phase angle of the light signal passing through the one optical path relative to the phase angle of the light signal passing through the other optical path. A photodiode configured to detect the interference signal generated by the MZI is operable to generate a photodiode current in response thereto. Circuitry converts the photodiode current to a control signal for controlling the tunable laser.

The invention refers to an optical instrument for determining a wavelength of light generated by a light source, comprising a signal generator for generating a modulation signal, a tunable optical filter device configured to receive the modulation signal, the tunable optical filter device configured to modulate the light generated by the light source based on the modulation signal, an optical detector device configured to detect a degree of modulation of light modulated by the tunable optical filter device, and an analyser configured to determine the wavelength of the light based the degree of modulation.

Coupled-cavity vertical cavity surface emitting lasers (VCSELs) are provided by the present disclosure. The coupled-cavity VCSEL can comprise a VCSEL having a first mirror, a gain medium disposed above the first mirror, and a second mirror disposed above the gain medium, wherein a first cavity is formed by the first mirror and the second mirror. A second cavity is optically coupled to the VCSEL and configured to reflect light emitted from the VCSEL back into the first cavity of the VCSEL. In some embodiments, the second cavity can be an external cavity optically coupled to the VCSEL through a coupling component. In some embodiments, the second cavity can be integrated with the VCSEL to form a monolithic coupled-cavity VCSEL. A feedback circuit can control operation of the coupled-cavity VCSEL so the output comprises a target high frequency signal.

A method includes driving, while producing a burst of pulses at a pulse repetition rate, a spectral feature adjuster among a set of discrete states at a frequency correlated with the pulse repetition rate; and in between the production of the bursts of pulses (while no pulses are being produced), driving the spectral feature adjuster according to a driving signal defined by a set of parameters. Each discrete state corresponds to a discrete value of a spectral feature. The method includes ensuring that the spectral feature adjuster is in one of the discrete states that corresponds to a discrete value of the spectral feature of the amplified light beam when a pulse in the next burst is produced by adjusting one or more of: an instruction to the lithography exposure apparatus, the driving signal to the spectral feature adjuster, and/or the instruction to the optical source.

A thin-film device for a wavelength-tunable semiconductor laser. The device includes a cavity between a high-reflectivity facet and an anti-reflection facet designed to emit a laser light of a wavelength in a tunable range determined by two Vernier-ring resonators with a joint-free-spectral-range between a first wavelength and a second wavelength. The device further includes a film including multiple pairs of a first layer and a second layer sequentially stacking to an outer side of the high-reflectivity facet. Each layer in each pair has one unit of respective optical thickness except one first or second layer in one pair having a larger optical thickness. The film is configured to produce inner reflectivity of the laser light from the high-reflectivity facet at least >90% for wavelengths in the tunable range starting from the first wavelength but at least <50% for wavelengths in a 25 nm range around the second wavelength.

A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Various technologies described herein pertain to injection locking on-chip laser(s) and external on-chip resonator(s). A system includes a first integrated circuit chip and a second integrated circuit chip. The first integrated circuit chip and the second integrated circuit chip are separate integrated circuit chips and can be optically coupled to each other. The first integrated circuit chip includes a laser configured to emit light via a first path and a second path. The second integrated circuit chip includes a resonator formed of an electrooptic material. The resonator can receive the light emitted by the laser of the first integrated circuit chip via the first path and return feedback light to the laser of the first integrated circuit chip via the first path. The feedback light can cause injection locking of the laser to the resonator to control the light emitted by the laser (e.g., via the first and second paths).