A solid-state optical amplifier is described, having an active core and doped cladding in a single chip. An active optical core runs through a doped cladding in a structure formed on a substrate. A light emitting structure, such as an LED, is formed within and/or adjacent to the optical core. The cladding is doped, for example, with erbium or other rare-earth elements or metals. Several exemplary devices and methods of their formation are given.

An embodiment of the present invention provides a continuous-wave terahertz generation and detection device using a photomixing technique, the device including: first and second light source units configured to output continuous-wave laser light sources, which have single wavelength and different frequencies, to generate optical signals; a first electro-optic phase modulator configured to shift a frequency of the optical signal generated by the first light source unit, and a second electro-optic phase modulator configured to shift a frequency of the optical signal generated by the second light source unit; a first optical amplifier configured to receive and amplify the optical signal whose frequency is shifted by the first electro-optic phase modulator and the optical signal generated by the second light source unit, and a second optical amplifier configured to receive and amplify the optical signal whose frequency is shifted by the second electro-optic phase modulator and the optical signal generated by the first light source unit; an opto-electronic converter configured to convert the optical signal amplified by the first optical amplifier into a terahertz wave; a photomixer configured to mix the optical signal amplified by the second optical amplifier and the terahertz wave generated by the opto-electronic converter and convert the mixed signal into an electrical signal; a photodetector configured to combine the optical signals transferred from the first and second optical amplifiers and convert the combined optical signal into an electrical signal; and a filter unit configured to filter the electrical signal passing through the photodetector, wherein the electrical signal obtained through the photodetector is compared with the electrical signal obtained by the photomixer, and phase noise having the same frequency is removed.

The present invention discloses a high-peak-power single-frequency narrow-linewidth nanosecond fiber laser based on a triangular pulse, wherein the laser includes: pulsed laser generated by the laser seed injecting into a first power pre-amplifier through a first isolator, and then injecting into a second pre-amplifier and then injecting into a power amplifier; wherein triangle-shaped pulsed laser with fast rising edge is obtained by using electro-optic and acousto-optic modulator to modulate continuous wave single-frequency laser or a single-frequency semiconductor laser directly modulated by radio frequency signal; single-frequency triangle-shaped pulsed laser is employed as the laser source according to the characteristics of narrow intrinsic linewidth and suppression of linewidth broadening caused by SPM, and the power of pulsed laser is amplified through the MOPA system.

The present invention provides a photonic integrated circuit, system, apparatus and method which can be used as an optical transmitter in a system, for example in a telecommunication system. According to the various embodiments of the invention, the circuit includes several optical devices, wherein some are passive and others have gain, which constructed and connected with the specific characteristics, leads to a multi-wavelength transmitter with tunable operation band.

A laser source for use in providing a laser beam for industrial operations in an industrial plant. The laser source selectively providing a first laser beam at a first outlet having relatively high power and lower beam quality and a second laser beam at a second outlet having relatively lower power and higher beam quality. The laser source including an optical path selector device for selectively transmitting a first laser beam along a first or second optical line toward respective first and second outlets. The second optical path having an optical amplification unit for changing the first laser to the second laser. An industrial plant including at least a first laser source selectively controls the first laser source to provide the first and the second lasers to predetermined laser processing stations. A second laser source may be used and controlled to provide a first or second laser to an alternate laser processing station on a failure of another laser source.

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.

A system and method for automatically performing gas optimization after a refill in the chambers of a two chamber gas discharge laser is disclosed. The laser is fired at low power, and the gas in the amplifier laser chamber bled if necessary until the discharge voltage meets or exceeds a minimum value without dropping the pressure below a minimum value. The power output is increased to a burst pattern that approximates the expected operation of the laser, and the amplifier chamber gas bled again if necessary until the voltage and an output energy meet or exceed minimum values, or until the pressure is less than a minimum value. The gas in the master oscillator chamber is then bled if necessary until the output energy of the master oscillator meets or falls below a maximum value, again without dropping the pressure in the chamber below the minimum value. While the pressure is adjusted, bandwidth is also measured and adjusted to stay within a desired range. Once the target values are provided, the process runs quickly without manual interaction.

A multi-stage laser drive circuit includes a variable common potential source, a PA light-emitting array between a storage capacitor and a current node, first and second low-side linear current sinks in electrical communication with the current node, and a second master oscillator (MO) light-emitting array in electrical communication between the current node and the first low side linear current sink. A trickle current circuit drives a low-value trickle current through the arrays, and a sense circuit senses the trickle current. Also, the headroom voltage across a pass element in the first low-side linear constant current sink is monitored and adjusted for maximum efficiency.

The present invention concerns a waveguide amplifier and a waveguide amplifier device comprising it. In addition, the invention concerns a method for producing such waveguide amplifier. The invention especially relates to erbium doped waveguide amplifiers having a controlled doping concentration.