The laser system may include first and second laser apparatuses and a beam delivery device. The first laser apparatus may be provided so as to emit a first laser beam to the beam delivery device in a first direction. The second laser apparatus may be provided so as to emit a second laser beam to the beam delivery device in a direction substantially parallel to the first direction. The beam delivery device may be configured to bundle the first and second laser beams and to emit the first and second laser beams from the beam delivery device to a beam delivery direction different from the first direction.

A solid-state laser system may include first and second solid-state laser units, a wavelength conversion system, an optical shutter, and a controller. The first solid-state laser unit and the second solid-state laser unit may output first pulsed laser light with a first wavelength and second pulsed laser light with a second wavelength, respectively. The controller may perform first control and second control. The first control may cause the first and second pulsed laser light to enter the wavelength conversion system at a substantially coincidental timing, thereby causing the wavelength conversion system to output third pulsed laser light with a third wavelength converted from the first wavelength and the second wavelength, and the second control may prevent the first and second pulsed laser light from entering the wavelength conversion system at the coincidental timing, thereby preventing the wavelength conversion system from outputting the third pulsed laser light.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas and connected through a second control valve to a second laser gas supply source that supplies a second laser gas having a lower halogen gas concentration than the first laser gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump, connected through a third control valve to the laser chamber, which raises a pressure of a gas having passed through the purification column to a gas pressure that is higher than an operating gas pressure of the laser chamber; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump through the third control valve to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

A gas laser device includes a shielding plate that is a first shielding member, and a shielding plate that is a second shielding member. The first shielding member includes a first opening, and a second opening. A laser beam that is to be propagated to discharge regions passes through the first opening. The laser beam that has taken a round trip through the discharge regions after passing through the first opening passes through the second opening. The second shielding plate faces the first shielding member the discharge regions located therebetween. The shielding plate includes an opening that is a third opening. The laser beam that has been propagated through the first opening and the discharge regions, and the laser beam that is to be propagated to the second opening through the discharge regions pass through the third opening. A plane shape of the third opening includes a rectilinear segment.

A laser system for amplifying laser light generated from a laser light source and emitting the laser light includes an optical element in an optical path of the laser light and transmits the laser light, a control device to control power to be supplied to the laser system, an imager to capture an image of the optical element, and an image processing circuitry to process the image of the optical element captured by the imager. The image processing circuitry in which reference images of the optical element corresponding to power information relating to the power are prepared in advance includes a comparison unit to compare a captured image of the optical element captured by the imager with a reference image selected by a reference image selection unit, the reference image corresponding to the power information at a time of image capturing by the imager.

A laser beam irradiation unit of a laser processing apparatus includes a first pulsed laser oscillator that oscillates a pulsed laser having a wavelength of 9 to 11 μm and a pulse width of 5 ns or less, a CO.sub.2 amplifier that amplifies a pulsed laser beam emitted from the first pulsed laser oscillator, and a condenser that focuses the pulsed laser beam amplified by the CO.sub.2 amplifier on a workpiece held on the chuck table.

A laser apparatus according to an aspect of the present disclosure includes a plurality of semiconductor lasers, a plurality of optical switches disposed in the optical paths of the plurality of respective semiconductor lasers, a wavelength conversion system configured to convert pulsed beams outputted from the plurality of optical switches in terms of wavelength to generate wavelength-converted beams, an ArF excimer laser amplifier configured to amplify the wavelength-converted beams, and a controller configured to control the operations of the plurality of semiconductor lasers and the plurality of optical switches, and the plurality of semiconductor lasers are each configured to output a laser beam so produced that wavelengths of the wavelength-converted beams are wavelengths at which the ArF excimer laser amplifier performs amplification and differ from the optical absorption lines of oxygen.

A method for manufacturing a semiconductor crystalline thin film according to a viewpoint of the present disclosure includes radiating first pulsed laser light having a first pulse duration to an amorphous semiconductor to poly-crystallize the amorphous semiconductor and radiating second pulsed laser light having a second pulse duration shorter than the first pulse duration to an area of a semiconductor crystal having undergone the poly-crystallization to lower the height of ridges of the semiconductor crystal.

A laser system includes: A. a solid-state laser apparatus configured to output a pulse laser beam having light intensity distribution in a Gaussian shape that is rotationally symmetric about an optical path axis; B. an amplifier including a pair of discharge electrodes and configured to amplify the pulse laser beam in a discharge space between the pair of discharge electrodes; and C. a conversion optical system configured to convert the light intensity distribution of the pulse laser beam output from the amplifier into a top hat shape in each of a discharge direction of the pair of discharge electrodes and a direction orthogonal to the discharge direction.

A set of optical elements for optical extraction composed of packed expanding optical cross sections to efficiently extract from a large gain region. The elements are rectangular shaped concave small expansion lenses matched to rectangular convex collimating lenses. Absorbing sheets divide an overall large volume up into smaller volumes to minimize losses due to amplified spontaneous emission. This arrangement has various applications, particularly in inertial confinement technology, where it may be used to extract energy from KrF laser media energized by electron beams. For certain applications, this regime of the gain medium may have zones at the absorbing sheets where this is no gain.