Patent classifications
H01S3/2375
Optical fiber amplifier for operation in two micron wavelength region
A doped fiber amplifier is proposed that includes both a Ho-doped amplifier (used as a preamplifier) and a Tm-doped amplifier (used as a power amplifier). The Ho-doped preamplifier typically uses a single clad (SC) optical fiber as the gain element, with both the propagating signal and pump beam introduced into the Ho-doped core of the SC fiber. The Tm-doped power amplifier typically utilizes a double clad (DC) optical fiber as the gain element, which allows for a multimode pump to propagate within the Tm-doped core region and inner cladding, providing efficient high power amplification of the signal received at its input.
Wavelength converter
A wavelength converter including: A. a crystal holder configured to hold a nonlinear crystal configured to convert a wavelength of a laser beam incident thereon and output the wavelength-converted laser beam; B. a first container configured to accommodate the crystal holder and include a light incident window so provided as to intersect an optical path of the laser beam incident on the nonlinear crystal and a light exiting window so provided as to intersect the optical path of the laser beam having exited out of the nonlinear crystal; C. a second container configured to accommodate the first container; D. a position adjusting mechanism configured to adjust at least a position of the first container; and E. an isolation mechanism configured to spatially isolate the light incident window and the light exiting window from the position adjusting mechanism.
METHOD OF EXPOSURE USING EXTREME ULTRAVIOLET AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.
SYSTEMS AND METHODS FOR CONTROL OF WAVEFORM-AGILE LASER TRANSMITTER
A laser transmitter including a waveform controller arranged to generate a waveform script having at least one of a pulse repetition frequency setting, a pulse duration setting, and a pulse amplitude pre-warp setting. The transmitter also includes an optical waveform generator arranged to: i) receive the waveform script, ii) generate pre-warped signal pulses based on the waveform script to compensate for gain distortion effects of a laser power amplifier, and iii) output the pre-warped signal pulses. The laser power amplifier is arranged to: i) receive the pre-warped signal pulses, ii) receive a continuous wave signal, and iii) output amplified signal pulses that maintain a substantially constant drive intensity at the input of a non-linear wavelength converter. The non-linear wavelength converter is arranged to receive the amplified signal pulses and emit wavelength-converted pulses.
Laser clock signal generators
A laser clock signal generator for controlling a laser beam generator to generate pulse laser radiation is provided. The laser clock signal generator includes a clock signal specification input arranged to receive an external clock specification signal, a basic clock signal generator configured to generate a basic clock signal based on the external clock specification signal and output the basic lock signal at a clock signal output to the laser beam generator, and a controller configured to control the basic clock generator, for example, to be synchronized with the external clock specification signal. The laser clock signal generator also includes an overclocking protector arranged between the basic clock generator and the clock signal output.
Multi-band signal processing system, joint box for multi-band signal processing system, and method for accommodating multi-band signal processing system
[Problem] To accommodate single-band signal processing devices in a high-density manner. [Solution] Provided is a system including: a first signal cable; a second signal cable; a third signal cable; a fourth signal cable; a first multi-band signal processing device that processes a first signal input from the first signal cable and outputs a resultant second signal to the second signal cable; a second multi-band signal processing device that processes a third signal input from the third signal cable and outputs a resultant fourth signal to the fourth signal cable; a first joint box that accommodates the first signal cable, the first multi-band signal processing device, the second signal cable, and the fourth signal cable; and a second joint box that accommodates the second signal cable, the third signal cable, the second multi-band signal processing device, and the fourth signal cable.
LASER SYSTEM
A laser system including: A. a laser apparatus configured to output a pulse laser beam; B. an optical pulse stretcher including a delay optical path for expanding a pulse width of the pulse laser beam; and C. a phase optical element included in the delay optical path and having a function of spatially and randomly shifting a phase of the pulse laser beam. The phase optical element includes a plurality of types of cells providing different amounts of phase shift to the pulse laser beam and arranged irregularly in any direction.
LASER SYSTEM AND ELECTRONIC DEVICE MANUFACTURING METHOD
A laser system according to one aspect of the present disclosure includes a wavelength-variable first solid-state laser device configured to output a first pulse laser beam; a wavelength conversion system including a first nonlinear crystal configured to wavelength-convert the first pulse laser beam and a first rotation stage configured to change a first incident angle of the first pulse laser beam on the first nonlinear crystal; an excimer amplifier configured to amplify a pulse laser beam wavelength-converted by the wavelength conversion system; and a control unit configured to receive, from an external device, data of a target center wavelength of an excimer laser beam output from the excimer amplifier, control a wavelength of the first pulse laser beam in accordance with the instructed target center wavelength, and control the first incident angle on the first nonlinear crystal in accordance with an average value of the target center wavelength.
LASER SYSTEM AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
In a laser system according to a viewpoint of the present disclosure, a first amplifier amplifies first pulsed laser light outputted from a first semiconductor laser system into second pulsed laser light, a wavelength conversion system converts the second pulsed laser light in terms of wavelength into third pulsed laser light, and an excimer amplifier amplifies the third pulsed laser light. The first semiconductor laser system includes a first current controller that controls current flowing through a first semiconductor laser in such a way that first laser light outputted from the first semiconductor laser is caused to undergo chirping and a first semiconductor optical amplifier that amplifies the first laser light into pulsed light. The laser system includes a control section that controls the amount of chirping performed on the first pulsed laser light in such a way that excimer laser light having a target spectral linewidth is achieved.
Optical Fiber Amplifier For Operation In Two Micron Wavelength Region
A doped fiber amplifier is proposed that includes both a Ho-doped amplifier (used as a preamplifier) and a Tm-doped amplifier (used as a power amplifier). The Ho-doped preamplifier typically uses a single clad (SC) optical fiber as the gain element, with both the propagating signal and pump beam introduced into the Ho-doped core of the SC fiber. The Tm-doped power amplifier typically utilizes a double clad (DC) optical fiber as the gain element, which allows for a multimode pump to propagate within the Tm-doped core region and inner cladding, providing efficient high power amplification of the signal received at its input.