Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.

An optical projection system includes: a laser emitter configured to emit a beam along an emission axis; an optical element having an optical axis non-parallel to the emission axis, the optical element having a back focal length; and a folding optic configured to redirect the beam toward the optical axis, the beam following a folded optical path having: a first section along the emission axis from the laser emitter to the folding optic; and a second section along the optical axis from the folding optic to the optical element, the sum of the lengths of the first and second sections being equal to the back focal length, the length of the first section being a function of a divergence of the beam and the back focal length, and the folding optic having a height along the optical axis configured to redirect substantially the entire beam emitted by the laser emitter.

A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

A package substrate and a manufacturing method thereof, and an OLED display device and a manufacturing method thereof are provided. The package substrate comprises a base substrate (1), the base substrate (1) includes a bonding region (11) for coating an adhesive. The package substrate further comprises a first barrier wall (2) located on the base substrate (1), and the first barrier wall (2) is arranged along an outer side edge of the bonding region (11).

Disclosed herein are sealed devices comprising a first glass substrate; a second glass substrate; an optional sealing layer between the first and second glass substrates; and at least one seal between the first and second glass substrates. The sealed devices may comprise at least one cavity containing at least one component chosen from laser diodes, light emitting diodes, organic light emitting diodes, quantum dots, and combinations thereof. Also disclosed herein are display devices comprising such sealed devices and methods for making sealed devices.

Both a conventional receiver and an HDR-compatible receiver well perform electro-optical conversion processing on transmission video data obtained by using an HDR opto-electronic transfer characteristic. High dynamic range opto-electronic conversion is performed on high dynamic range video data to obtain the transmission video data. Encoding processing is performed on this transmission video data to obtain a video stream. A container of a predetermined format including this video stream is transmitted. Metadata information indicating a standard dynamic range opto-electronic transfer characteristic is inserted into a layer of the video stream, and metadata information indicating a high dynamic range opto-electronic transfer characteristic is inserted into at least one of the layer of the video stream and a layer of the container.

An optical element module which can adsorb a foreign matter and absorb moisture remaining in the module with use of a simple structure which does not require a complicated production process is provided. An optical element module (101) includes a sealed housing (11, 12) and an optical element 1 mounted in the sealed housing (11, 12), said optical element module (101) further including polyurethane (13) having self-adherence and a desired shape, the polyurethane (13) being fixed inside said optical element module (101) with use of the self-adherence of the polyurethane (13).

An optical apparatus comprises a package containing an optical device and having a front end face provided with a through window part 11 to which an optical fiber optically connected to the optical device is attached, a base having an attachment surface for attaching the package, a first extension arranged so as to project from the front end face along the attachment surface, and a package securing member having a tilted surface adapted to abut against the package so as to generate a force for pressing the package against the base. The package securing member is independent of the package.

A sheet light source is described that has a width in a front-to-back “x” direction, a length in a left-to-right “y” direction, and a height in a bottom-to-top “z” direction. The sheet light source includes a bottom conductive surface, a laser diode, a transparent conductive sheet, and an adhesive material portion. The laser diode is mounted on the conductive surface in the “z” direction. The transparent conductive sheet is laminated onto the laser diode and the conductive surface in the “z” direction. The adhesive material portion is located between the conductive sheet and the conductive surface, and binds the transparent conductive sheet to the laser diode and the conductive surface. The adhesive material portion further enables photons, emitted substantially in the “x” direction from the laser diode, to propagate therein to an edge and be output.

The semiconductor laser device includes a base member having a recess that opens upward, a semiconductor laser element disposed on a bottom surface of the recess, and a light reflecting member being disposed forward of a light emitting surface of the semiconductor laser element and including a light reflecting surface to reflect laser light emitted from the semiconductor laser element. The semiconductor laser element and the light reflecting member are arranged such that a direction of an optical axis of light that is reflected by the light reflecting member is different from a direction that is perpendicular to a lower surface of the base member.