A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

An optical module includes a light-forming unit configured to form light, and a protective member surrounding and sealing the light-forming unit. The light-forming unit includes a base member including an electronic temperature control module, a plurality of laser diodes arranged on the base member, a filter arranged on the base member and configured to multiplex light from the plurality of laser diodes, a beam shaping portion arranged on the base member and configured to convert a beam shape of the light multiplexed by the filter, and a MEMS arranged on the base member and including a scanning mirror configured to scan the light shaped in the beam shaping portion. The protective member includes a base body, and a lid welded to the base body.

Provided is a semiconductor laser device having enhanced heat dissipation properties. A semiconductor laser device 10 comprises a stem 11, a cap 12 that is attached to an upper surface of the stem 11, a semiconductor laser element 13, and a power-feeding member 14 that is at least partially buried in the stem 11. The power-feeding member 14 comprises an element-side terminal 32 that is electrically connected to the semiconductor laser element 13, and an external terminal 33. The external terminal 33 of the power-feeding member 14 is exposed on a side surface or the upper surface of the stem 11, and an attaching surface 11b that is attached to a mounting object is provided in a lower surface of the stem 11.

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

Apparatuses and methods for a temperature insensitive electro-absorption modulator and laser. The device comprising a laser capable of emitting light. The laser itself includes a laser gain section, a first mirror and a second mirror. Each of the mirrors are coupled to the laser gain section. The laser gain section contains quantum wells. The first mirror and the second mirror have a wavelength bandwidth sufficient for a lasing wavelength range of the laser. A modulator is coupled to the laser to receive the light and is capable of modulating the light to vary the output from the modulator. The modulator contains quantum wells and has a quantum well confinement factor that is greater than 0.1. An output coupler is coupled to the modulator and the output coupler has a back reflection that is less than half of a back reflection of the second mirror. The laser has a lasing wavelength that tracks the absorption spectrum of the modulator. The device is operated at a temperature range comprising a first temperature and a second temperature, wherein the second temperature is greater than the first temperature by at least 15 degrees Celsius.

A microfabricated optical apparatus that includes a light source driven by a waveform, a turning mirror, and a beam shaping element, wherein the waveform is delivered to the light source by at least one through silicon via. The microfabricated optical apparatus may also include a light-sensitive receiver which generates an electrical signal in response to an optical signal. The electrical signal may be communicated to external devices by at least one additional through silicon via.

Imaging apparatus includes an illumination assembly, including a plurality of radiation sources and projection optics, which are configured to project radiation from the radiation sources onto different, respective regions of a scene. An imaging assembly includes an image sensor and objective optics configured to form an optical image of the scene on the image sensor, which includes an array of sensor elements arranged in multiple groups, which are triggered by a rolling shutter to capture the radiation from the scene in successive, respective exposure periods from different, respective areas of the scene so as to form an electronic image of the scene. A controller is coupled to actuate the radiation sources sequentially in a pulsed mode so that the illumination assembly illuminates the different, respective areas of the scene in synchronization with the rolling shutter.

An illuminator and a display capable of achieving miniaturization are provided with use of a plurality of light sources emitting light with two or more kinds of wavelengths. In the light source unit 11, a red-color laser 11R, a green-color laser 11G, a blue-color laser 11B, a microlens section 116, and a microprism 117 are integrated on a base material. Each laser beam emitted from each of the laser light sources is transmitted through the microlens section 116, and then, comes into the microprism 117. In the microprism 117, optical path conversion is performed to shorten the distance between the optical paths of the incident light beams (to allow the optical axes of the incident light beams to be closer to each other). Due to the above-described integration, the optical paths of the laser beams are allowed to be synthesized using the microscopic-scaled microlens section and microprisms.

A laser assembly is disclosed. The laser assembly includes a carrier for mounting a semiconductor laser diode (LD) and a capacitor thereon. The carrier provides, in a top surface thereof, a metal pattern having a die area for mounting the LD through a brazing material, a mounting area, and an auxiliary area for absorbing a surplus brazing material. The capacitor is mounted on the mounting area closer to the LD through another brazing material.