A quantum cascade semiconductor laser includes a substrate with a main surface including a waveguide area and a distributed Bragg reflection area that are arranged in a direction of a first axis; a laser region provided on the waveguide area, the laser region including a mesa waveguide having first and second side surfaces, and first and second burying regions provided on the first and second side surfaces, respectively; a distributed Bragg reflection region provided on the distributed Bragg reflection area, the distributed Bragg reflection region including a semiconductor wall having first bulk semiconductor regions and first laminate regions that are alternately arrayed in a direction of a second axis intersecting the first axis; and an upper electrode provided on the laser region. Each first bulk semiconductor region includes a bulk semiconductor layer. Each first laminate region includes a stacked semiconductor layer having a plurality of semiconductor layers.

An optical device may include a semiconductor laser chip to independently generate four laser beams at different wavelengths. Each laser beam, of the four laser beams, may be directed to a respective optical output of the optical device with a sub-micron level of tolerance of each laser beam relative to the respective optical outputs of the optical device, and each laser beam, of the four laser beams, may be associated with a different optical path from the semiconductor laser chip to the respective optical output of the optical device. The optical device may include a lens to receive each of the four laser beams. The lens may be positioned to direct each laser beam, of the four laser beams, toward the respective optical output of the optical device. The optical device may include an optical isolator to receive each of the four laser beams.

A laser assembly for use with an additive manufacturing system, which includes a base block configured to be moved along a scan direction axis in the additive manufacturing system, a plurality of laser emitters preferably arranged in an array of at least two rows of two or more laser emitters. At least a portion of a heat sink assembly is configured to draw heat away from the base block and/or the laser emitters. The assembly includes a controller assembly a controller assembly configured to control a movement of the base block along the first axis and to independently control at least timing and duration of energy emitted from each laser emitter of the plurality of laser emitters as the base block moves along the first axis.

For epitaxial-side-down bonding of quantum cascade lasers (QCLs), it is important to optimize the heat transfer between the QCL chip and the heat sink to which the chip is mounted. This is achieved by using a heatsink with high thermal conductivity and by minimizing the thermal resistance between the laser active region and said heatsink. In the epi-down configuration concerned, the active region of the QCL is located only a few micrometers away from the heatsink, which is preferable from a thermal standpoint. However, this design is challenging to implement and often results in a low fabrication yield if no special precautions are taken. Since the active region is very close to the heatsink, solder material may ooze out on the sides of the chip during the bonding process and may short-circuits the device, rendering it unusable. To avoid this happening, the invention proposes to provide a trench all around the chip with the exception of the two waveguide facets, i.e. the ends of the active region. This trench may be etched into the otherwise standard QCL chip or otherwise machined into the chip, providing an initially empty space for the volume of solder displaced by the chip during the epi-down bonding process, which empty space is occupied by the surplus solder without contacting the side of the chip and thus short-circuiting the device.

The invention relates to a light module including a semiconductor laser element emitting a laser beam in a first cone of light, a photoluminescent element, and an optical means for transforming the light coming from the photoluminescent element into an exit light beam. The optical means has a guiding portion arranged to guide at least a portion of the light emitted in the first cone of light into a second cone of light and a device for detection of incident light. The light module comprises a means of deviation designed to deviate the light of the second cone of light toward a third cone of light directed toward the detection device arranged outside of the second cone of light.

A method of spectrally multiplexing diode pump modules to increase brightness includes generating one or more pump beams from respective diode lasers at a first wavelength in a diode laser package, generating one or more pump beams from respective diode lasers at a second wavelength different from the first wavelength in the diode laser package, wavelength combining at least one of the pump beams at the first wavelength with at least one of the pump beams at the second wavelength to form one or more combined pump beams, and receiving the combined pump beams in a pump fiber coupled to the diode laser package. Laser systems can include multi-wavelength pump modules and a gain fiber having a core actively doped so as to have an absorption spectrum corresponding to the multiple wavelength, the gain fiber situated to receive the pump light and to produce an output beam at an output wavelength.

An optoelectronic module is provide and includes an electronic unit, an optical unit, and an interconnect structure. The electronic unit is capable of outputting and/or receiving electric signals, while the optical unit is capable of converting the electric signals into optical signals. The interconnect structure connects the electronic unit and the optical unit, and includes an electrically conducting substrate and a pair of transmission leads connecting electronic unit and the optical unit. The pair of transmission leads includes a signal lead and a ground lead having lower impedance than the signal lead.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Various embodiments of an apparatus that simultaneously cools and thermally decouples adjacent electrically-driven devices in close proximity are provided. In one aspect, an apparatus comprises a first non-silicon heat sink and a first silicon-based heat sink disposed on the first non-silicon heat sink. The first silicon-based heat sink is configured to receive a first electrically-driven device on a first portion of the first silicon-based heat sink and to receive a second electrically-driven device on a second portion of the first silicon-based heat sink. The first silicon-based heat sink includes a first groove or a first opening between the first portion and the second portion such that a heat conduction path between the first electrically-driven device and the first non-silicon heat sink through the first silicon-based heat sink is shorter than a heat conduction path between the first electrically-driven device and the second electrically-driven device through the first silicon-based heat sink.

A semiconductor laser device includes: a semiconductor laser including a plurality of emission regions into which currents are injected to emit laser beams and first and second major surfaces opposite to each other; and a plurality of first wires bonded to the first major surface of the semiconductor laser, wherein the first major surface of the semiconductor laser has a first stripe region corresponding to one of the plurality of emission regions, and a second stripe region corresponding to another of the plurality of emission regions, and the number of the first wires bonded to the first stripe region is larger than the number of the first wires bonded to the second stripe region.