Patent classifications
H01S5/1092
Light emitting element
A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.
Spectrally shaped tunable short-cavity laser
A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed.
VARIABLE WAVELENGTH LIGHT SOURCE AND APPARATUS INCLUDING THE SAME
A variable wavelength light source and an apparatus including the same are disclosed. The variable wavelength light source includes: a first waveguide; a second waveguide spaced apart from the first waveguide; a first optical amplifier including a first gain medium; and a second optical amplifier including a second gain medium that is different from the first gain medium.
DIAGNOSTIC SYSTEM WITH BROADBAND LIGHT SOURCE
A diagnostic system is provided with a plurality of semiconductor light emitters, each configured to generate an optical beam, and a beam combiner to generate a multiplexed optical beam. An optical fiber or waveguide communicates at least a portion of the multiplexed optical beam to form an output beam, wherein the output beam is pulsed. A filter, coupled to at least one of a lens and a mirror to receive at least a portion of the output beam, forms an output light. A beam splitter splits the light into a sample arm and a reference arm and directs at least a portion of the sample arm light to a sample. A detection system is configured to receive from the sample at least a portion of reflected sample light, to generate a sample detector output, and to use a lock-in technique with the pulsed output beam.
MULTI-WAVELENGTH SEMICONDUCTOR LASERS
Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.
QUANTUM DOT COMB LASERS WITH EXTERNAL CAVITY
A quantum dot comb laser includes a body defining a lasing cavity and an extension defining an external cavity, the FSR of the lasing cavity being an inverse of an integer multiple of the FSR of the external cavity.
Multi-wavelength semiconductor lasers
Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.
Multifrequency Ocean Lidar Power Optimizer
Systems and methods are provided for optimizing the energy output of a laser system, such as a Light Detection and Ranging (LIDAR) system, by allowing the laser system to be tuned while the laser is in operation. For example, in an embodiment, a sensor, such as a photoresistor, is used to perform a scan to determine whether turning the crystal will result in increased energy. Crystal turners, such as servo motors, can be used to turn the crystal until the energy stops increasing.
BLOCH MIRROR RESONATOR AND DISTRIBUTED FEEDBACK LASER USING SAME
A resonator is provided having a waveguide with a first boundary, a second boundary parallel to the first boundary, a first end, a second end, and a waveguide cavity at least partly between the first boundary and the second boundary. A first grating, having a period of distance a, is at the first boundary of the waveguide, and a second grating, having a period of distance a, is at the second boundary of the waveguide. The first and second boundaries are separated by a constant distance d. The first boundary may have a periodic profile aligned with a periodic profile of the second boundary. The periodic profile of the first boundary and the second boundary may be a sinusoidal profile, a square profile, or profile of another shape. The resonator may be suitable for use in a distributed feedback laser.
Tuneable DBR laser without external frequency locker
In accordance with one aspect of the present application there is provided a DBR, laser. The DBR laser comprises a phase section in a cavity of the DBR laser configured to adjust an optical path length of the cavity. The laser also comprises a DBR section comprising a frequency tuning system, the frequency tuning system comprising a resistance heater configured to apply heat to a grating of the DBR section in order to adjust a Bragg frequency of the DBR section. A detector is configured to detect laser light transmitted through the DBR section. A controller is configured: to cause the phase section to apply a dither to the optical path length of the cavity or cause the frequency tuning system to apply a dither to the Bragg frequency of the DBR section; to use the detector to monitor intensity of light transmitted from the laser cavity via the DBR section during application of the dither; to determine a deviation from longitudinal mode centre operation on the basis of the monitored intensity; to cause the phase section to adjust the optical path length of the cavity in order to reduce said deviation; to determine an output frequency of the DBR laser on the basis of a resistance of the resistance heater; and to control the output frequency of the DBR laser by controlling power to the resistance heater.