A semiconductor laser device of the present disclosure includes: a first-conductivity-type cladding layer, a first-conductivity-type-side optical guide layer, an active layer, a second-conductivity-type-side optical guide layer, a second-conductivity-type cladding layer, and a second-conductivity-type contact layer laminated above a semiconductor substrate; a resonator having a front end surface and a rear end surface; and a ridge region for guiding a laser beam between the front and rear end surfaces. The ridge region is composed of a ridge inner region in which an effective refractive index is n.sub.a.sup.i, and ridge outer regions which are provided on both sides of the ridge inner region and in which an effective refractive index is n.sub.a.sup.o, the ridge outer regions having current non-injection structures. A ridge outer region width W.sub.o is greater than a distance from a lower end of each current non-injection structure to the active layer.

A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

The invention relates to an edge-emitting semiconductor laser comprising —at least two laser diodes, each of which is designed to generate electromagnetic radiation, wherein —the laser diodes are arranged on top of one another in a vertical direction, —the laser diodes are monolithically connected to one another, and —at least one frequency-stabilizing element is arranged in an end region of the laser diodes. The invention also relates to a method for producing an edge-emitting semiconductor laser.

A semiconductor laser device is specified comprising an edge emitting semiconductor laser diode, which emits laser light along a horizontal direction during operation, a reflector element, which deflects a first part of the laser light in a vertical direction, while a second part of the laser light continues to propagate in the horizontal direction, and a detector element, which is arranged at least partly in a beam path of the second part of the laser light. An optoelectronic beam deflection element for a semiconductor laser device is furthermore specified.

A process for creating a stabilized diode laser device is disclosed, where the stabilized diode laser device includes a unibody mounting plate and several chambers aligned along a transmission axis. Various optic components are placed in the chambers, and based on a transmission through the chambers, the optic components are aligned and secured within the chambers.

The present invention relates to a device for generating laser radiation.

An object of the present invention is to indicate a laser diode which simultaneously has a high degree of efficiency and a low degree of far field divergence.

The diode laser according to the invention comprises a current barrier (5), characterized in that the current barrier (5) extends along a third axis (X), wherein the current barrier (5) has at least one opening, and a first width (W1) of the opening of the current barrier (5) along the third axis (X) is smaller than a second width (W2) of the metal p-contact (8) along the third axis (X).

A laser diode, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet, and a first contact layer electrically coupled to the waveguide and configured to vary an amount of current injected into the waveguide in the longitudinal direction so as to inject more current near the HR facet than at the PR facet.

A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.