A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

Provided in a method of fabricating an optical element array including providing a silicon substrate, providing a first element layer on the silicon substrate, the first element layer including a plurality of passive optical elements, providing a plurality of semiconductor blocks on a compound semiconductor wafer, providing semiconductor dies by dicing the compound semiconductor wafer by the plurality of semiconductor blocks, and providing a second element layer by providing the semiconductor dies on the first element layer, each of the plurality of semiconductor blocks contacting at least one corresponding passive optical element from among the plurality of passive optical elements.

A light-emitting device includes a base body; light-emitting elements mounted on an upper surface of the base body; a frame body bonded to the upper surface of the base body, the frame body including inner lateral surfaces, outer lateral surfaces, and first through-holes that extend through the frame body in a lateral direction; lead terminals that extend through the first through-holes, and each of which is electrically connected to the light-emitting elements; a cover bonded to the frame body; plate bodies bonded to an outer lateral surface or inner lateral surface of the frame body, each of the plate bodies having one or more second through-holes, wherein each of the lead terminals extends through a respective through-hole; and fixing members, each of which is disposed in a second through-hole and fixes a respective one of the one or more lead terminals.

In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

A phosphor element includes: a phosphor part having an incident face for excitation light, an opposing face opposing the incident face, and a side face, the phosphor part converting at least a part of the excitation light incident onto the incident face into a fluorescence and emitting the fluorescence from the incident face; an integral low refractive index layer on the side face and opposing face of the phosphor part and having a refractive index lower than that of the phosphor part; and an integral reflection film covering a surface of the low refractive index layer. The area of the incident face of the phosphor part is larger than the area of the opposing face.

In various embodiments, the concentration and deposition of siloxane materials within components of laser systems, such as laser resonators, is reduced or minimized utilizing mitigation systems that may also supply gas having low siloxane levels into multiple different components in series or in parallel.

A device including a non-polarization material includes a number of layers. A first layer of silicon (100) defines a U-shaped groove having a bottom portion (100) and silicon sidewalls (111) at an angle to the bottom portion (100). A second layer of a patterned dielectric on top of the silicon (100) defines vertical sidewalls of the U-shaped groove. A third layer of a buffer covers the first layer and the second layer. A fourth layer of gallium nitride is deposited on the buffer within the U-shaped groove, the fourth layer including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein a deposition thickness (h) of the gallium nitride above the first layer of silicon (100) is such that the c-GaN completely covers the h-GaN between the vertical sidewalls.

An optical coherence analysis system uses a laser swept source that is constrained to operate in a stable mode locked condition by modulating a drive current to the semiconductor optical amplifier as function of wavelength or synchronously with the drive voltage of the laser's tunable element based on stability map for the laser.

A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.